Philips 74lvc125 DATASHEETS

INTEGRATED CIRCUITS

74LVC125

Quad buffer/line driver; 3-State

Product specification
Supersedes data of February 1996
IC24 Data Handbook

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1997 Mar 18

Philips Semiconductors Product specification

74L VC125Quad buffer/line driver; 3-State

FEA TURES

•Wide supply voltage range of 1.2 to 3.6 V

•In accordance with JEDEC standard no. 8-1A

•Inputs accept voltages up to 5.5 V

•CMOS lower power consumption

•Direct interface with TTL levels

DESCRIPTION

The 74LVC125 is a high performance, low-power, low-voltage
Si-gate CMOS device and superior to most advanced CMOS
compatible TTL families.

The 74LVC125 consists of four non-inverting buffers/line drivers with
3-State outputs. The 3-State outputs (nY) are controlled by the
output enable input (nOE
assume a high impedance OFF-state.

). A HIGH at nOE causes the outputs to

•Output drive capability 50  transmission lines at 85°C

QUICK REFERENCE DATA

GND = 0 V; T

SYMBOL

t

NOTES:

is used to determine the dynamic power dissipation (PD in µW)

1. C

PD

= CPD × V

P

D

= input frequency in MHz; CL = output load capacity in pF;

f

i

= output frequency in MHz; VCC = supply voltage in V;

f

o

Σ (C

L

2. The condition is V

ORDERING INFORMATION

14-Pin Plastic SO –40°C to +85°C 74LVC125 D 74LVC125 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +85°C 74LVC125 DB 74LVC125 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +85°C 74LVC125 PW 74LVC125PW DH SOT402-1

= 25°C; tr = tf ≤ 2.5 ns

amb

PARAMETER CONDITIONS TYPICAL UNIT

PHL/tPLH

C

I

C

PD

2

× fi +Σ (CL × V

CC

2

× V

× fo) = sum of the outputs.

CC

= GND to V

I

Propagation delay
nA to nY

Input capacitance 5.0 pF
Power dissipation capacitance per buffer Notes 1 and 2 22 pF

2

× fo) where:

CC

CC

CL = 15 pF;

= 3.3 V

V

CC

3.5 ns

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA PKG. DWG. #

PIN CONFIGURATION

1

1OE

2OE

GND

2

1A

3

1Y

4

5

2A

6

2Y

7

14

V

CC

13

4OE

12

4A

11

4Y

10

3OE

9

3A

3Y

8

PIN DESCRIPTION

PIN

NUMBER

1, 4, 10, 13 1OE – 4OE Data enable inputs (active LOW)
2, 5, 9, 12 1A – 4A Data inputs
3, 6, 8, 11 1Y – 4Y Data Outputs
7 GND Ground (0 V)
14 V

SYMBOL NAME AND FUNCTION

CC

Positive supply voltage

SV00455

LOGIC SYMBOL

3

1A

2

1OE

1

5

2A

2OE

4

9

3A

3OE

10

12

4A

4OE

13

1Y

6

2Y

8

3Y

11

4Y

SV00456

1997 Mar 18 853–1951 17865

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

CONDITIONS

UNIT

mW

74LVC125Quad buffer/line driver; 3-State

FUNCTION TABLE

INPUTS OUTPUT

nOE nA nY

L L L
L H H

H X Z

NOTES:

H = HIGH voltage level
L = LOW voltage level
X = don’t care
Z = high impedance OFF-state

RECOMMENDED OPERA TING CONDITIONS

V
V

V

T

V

V

amb

tr, t

DC supply voltage (for max. speed performance) 2.7 3.6 V

CC

DC supply voltage (for low-voltage applications) 1.2 3.6 V

CC

DC input voltage range 0 5.5 V

I

DC input voltage range for I/Os 0 V

I/O

DC output voltage range 0 V

O

Operating free-air temperature range –40 +85 °C
Input rise and fall times

f

LOGIC SYMBOL (IEEE/IEC)

2

1

EN1

5

4

9

10

12

13

MIN MAX

VCC = 1.2 to 2.7V

= 2.7 to 3.6V

V

CC

0
0

1

LIMITS

3

6

8

11

SV00457

CC
CC

20
10

V
V

ns/V

ABSOLUTE MAXIMUM RATINGS

1

In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).

SYMBOL

V

CC

I

IK

V

I

V

I/O

I

OK

V

OUT

I

OUT

I

, I

GND

CC

T

stg

DC supply voltage –0.5 to +6.5 V
DC input diode current VI 0 –50 mA
DC input voltage Note 2 –0.5 to +5.5 V
DC input voltage range for I/Os –0.5 to VCC +0.5 V
DC output diode current V
DC output voltage Note 2 –0.5 to VCC +0.5 V
DC output source or sink current VO = 0 to V
DC VCC or GND current 100 mA
Storage temperature range –60 to +150 °C

PARAMETER CONDITIONS RATING UNIT

VCC or VO  0 50 mA

O

CC

50 mA

Power dissipation per package

P

TOT

– plastic mini-pack (SO) above +70°C derate linearly with 8 mW/K 500
– plastic shrink mini-pack (SSOP and TSSOP) above +60°C derate linearly with 5.5 mW/K 500

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

1997 Mar 18

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