Philips 74LVC08APW, 74LVC08ADB, 74LVC08AD, 74LVC08PW, 74LVC08DB Datasheet
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INTEGRATED CIRCUITS
74LVC08A
Quad 2-input AND gate
Product specification |
1997 Jun 30 |
IC24 Data Handbook |
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m n r
Philips Semiconductors |
Product specification |
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Quad 2-input AND gate |
74LVC08A |
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FEATURES
•Wide supply voltage range of 1.2 V to 3.6 V
•In accordance with JEDEC standard no. 8-1A
•Inputs accept voltages up to 5.5 V
•CMOS low power consumption
•Direct interface with TTL levels
DESCRIPTION
The 74LVC08A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V/5 V environment.
The 74LVC08A provides the 2-input AND function.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25°C; tr = tf 2.5 ns
SYMBOL |
PARAMETER |
CONDITIONS |
TYPICAL |
UNIT |
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tPHL/tPLH |
Propagation delay |
CL = 50 pF; |
2.6 |
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nA, nB to nY |
VCC = 3.3 V |
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CI |
Input capacitance |
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5.0 |
pF |
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CPD |
Power dissipation capacitance per gate |
Notes 1 and 2 |
28 |
pF |
NOTES:
1.CPD is used to determine the dynamic power dissipation (PD in mW)
PD = CPD × VCC2 × fi (CL × VCC2 × fo) where:
fi = input frequency in MHz; CL = output load capacity in pF;
fo = output frequency in MHz; VCC = supply voltage in V;(CL × VCC2 × fo) = sum of the outputs.
2.The condition is VI = GND to VCC.
ORDERING INFORMATION
PACKAGES |
TEMPERATURE RANGE |
OUTSIDE NORTH AMERICA |
NORTH AMERICA |
DWG NUMBER |
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14-Pin Plastic SO |
±40°C to +85°C |
74LVC08A D |
74LVC08A D |
SOT108-1 |
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14-Pin Plastic SSOP Type II |
±40°C to +85°C |
74LVC08A DB |
74LVC08A DB |
SOT337-1 |
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14-Pin Plastic TSSOP Type I |
±40°C to +85°C |
74LVC08A PW |
74LVC08APW DH |
SOT402-1 |
PIN CONFIGURATION |
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LOGIC SYMBOL |
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1A |
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1 |
1A |
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1 |
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14 |
VCC |
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1B |
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1Y |
3 |
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1B |
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4B |
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2 |
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2 |
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13 |
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1Y |
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4A |
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4 |
2A |
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2Y |
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3 |
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12 |
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5 |
2B |
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6 |
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2A |
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4Y |
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4 |
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11 |
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9 |
3A |
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3Y |
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8 |
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2B |
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3B |
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3B |
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5 |
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10 |
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10 |
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4A |
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2Y |
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3A |
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6 |
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9 |
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12 |
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4Y |
11 |
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4B |
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13 |
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GND |
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7 |
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8 |
3Y |
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SV00435 |
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SY00034 |
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PIN DESCRIPTION |
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PIN NUMBER |
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SYMBOL |
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NAME AND FUNCTION |
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1, 4, 9, 12 |
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1A ± 4A |
Data inputs |
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2, 5, 10, 13 |
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1B ± 4B |
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3, 6, 8, 11 |
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1Y ± 4Y |
Data outputs |
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7 |
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GND |
Ground (0 V) |
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14 |
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VCC |
Positive supply voltage |
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1997 Jun 30 |
2 |
853-1996 18167 |
Philips Semiconductors |
Product specification |
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Quad 2-input AND gate |
74LVC08A |
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LOGIC SYMBOL (IEEE/IEC)
1 |
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& |
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3 |
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2 |
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4 |
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& |
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6 |
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5 |
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9 |
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& |
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8 |
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10 |
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12 |
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& |
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11 |
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13 |
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SV00436 |
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RECOMMENDED OPERATING CONDITIONS
LOGIC DIAGRAM (ONE GATE)
A
Y
B
SV00415
FUNCTION TABLE
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INPUTS |
OUTPUTS |
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nA |
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nB |
nY |
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L |
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L |
L |
L |
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H |
L |
H |
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L |
L |
H |
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H |
H |
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NOTES:
H = HIGH voltage level
L = LOW voltage level
SYMBOL |
PARAMETER |
CONDITIONS |
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LIMITS |
UNIT |
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MIN |
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MAX |
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VCC |
DC supply voltage (for max. speed performance) |
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2.7 |
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3.6 |
V |
VCC |
DC supply voltage (for low-voltage applications) |
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1.2 |
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3.6 |
V |
VI |
DC input voltage range |
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0 |
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5.5 |
V |
VO |
DC output voltage range; output HIGH or LOW state |
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0 |
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VCC |
V |
Tamb |
Operating ambient temperature range in free-air |
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±40 |
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+85 |
°C |
tr, tf |
Input rise and fall times |
VCC = 1.2 to 2.7V |
0 |
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20 |
ns/V |
VCC = 2.7 to 3.6V |
0 |
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10 |
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ABSOLUTE MAXIMUM RATINGS1
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL |
PARAMETER |
CONDITIONS |
RATING |
UNIT |
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VCC |
DC supply voltage |
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±0.5 to +6.5 |
V |
IIK |
DC input diode current |
VI t 0 |
±50 |
mA |
VI |
DC input voltage |
Note 2 |
±0.5 to +6.5 |
V |
IOK |
DC output diode current |
VO uVCC or VO t 0 |
"50 |
mA |
VO |
DC output voltage; output HIGH or LOW state |
Note 2 |
±0.5 to VCC +0.5 |
V |
IO |
DC output source or sink current |
VO = 0 to VCC |
"50 |
mA |
IGND, ICC |
DC VCC or GND current |
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"100 |
mA |
Tstg |
Storage temperature range |
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±65 to +150 |
°C |
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Power dissipation per package |
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PTOT |
± plastic mini-pack (SO) |
above +70°C derate linearly with 8 mW/K |
500 |
mW |
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± plastic shrink mini-pack (SSOP and TSSOP) |
above +60°C derate linearly with 5.5 mW/K |
500 |
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NOTES:
1.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1997 Jun 30 |
3 |
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