INTEGRATED CIRCUITS
74LV367
Hex buffer/line driver (3-State)
Product specification |
1998 May 29 |
Supersedes data of 1997 Mar 04
IC24 Data Handbook
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Philips Semiconductors |
Product specification |
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Hex buffer/line driver (3-State) |
74LV367 |
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FEATURES
•Optimized for Low Voltage applications: 1.0 to 3.6V
•Accepts TTL input levels between VCC = 2.7V and VCC = 3.6V
•Typical VOLP (output ground bounce) 0.8V @ VCC = 3.3V,
Tamb = 25°C
•Typical VOHV (output VOH undershoot) 2V @ VCC = 3.3V, Tamb = 25°C
•Non-inverting outputs
•Output capability: bus driver
•ICC category: MSI
DESCRIPTION
The 74LV367 is a low-voltage CMOS device and is pin and function compatible 74HC/HCT367.
The 74LV367 is a hex non-inverting buffer/line driver with 3-State outputs. The 3-State outputs (nY) are controlled by the output
enable inputs (1OE, 2OE).
A HIGH on nOE, causes the outputs to assume a high impedance
OFF-state.
QUICK REFERENCE DATA
GND = 0V; Tamb = 25°C; tr = tf 2.5 ns
SYMBOL |
PARAMETER |
CONDITIONS |
TYPICAL |
UNIT |
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tPHL/tPLH |
Propagation delay |
CL = 15pF |
8 |
ns |
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nA to nY |
VCC = 3.3V |
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CI |
Input capacitance |
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3.5 |
pF |
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CPD |
Power dissipation capacitance per buffer |
Notes 1 and 2 |
30 |
pF |
NOTES:
1.CPD is used to determine the dynamic power dissipation (PD in μW) PD = CPD VCC2 fi (CL VCC2 fo) where:
fi = input frequency in MHz; CL = output load capacitance in pF;
fo = output frequency in MHz; VCC = supply voltage in V;
(CL VCC2 fo) = sum of the outputs.
2.The condition is VI = GND to VCC
ORDERING INFORMATION
PACKAGES |
TEMPERATURE RANGE |
OUTSIDE NORTH AMERICA |
NORTH AMERICA |
PKG. DWG. # |
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16-Pin Plastic DIL |
±40°C to +125°C |
74LV367 N |
74LV367 N |
SOT38-4 |
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16-Pin Plastic SO |
±40°C to +125°C |
74LV367 D |
74LV367 D |
SOT109-1 |
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16-Pin Plastic SSOP Type II |
±40°C to +125°C |
74LV367 DB |
74LV367 DB |
SOT338-1 |
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16-Pin Plastic TSSOP Type I |
±40°C to +125°C |
74LV367 PW |
74LV367PW DH |
SOT403-1 |
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PIN DESCRIPTION
PIN |
SYMBOL |
FUNCTION |
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NUMBER |
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1, 15 |
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1OE |
, 2OE |
Output enable inputs (active-LOW) |
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2, 4, 6, 10, |
1A to 6A |
Data inputs |
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12, 14 |
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3, 5, 7, 9, 11, |
1Y to 6Y |
Data outputs |
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13 |
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8 |
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GND |
Ground (0V) |
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16 |
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VCC |
Positive supply voltage |
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FUNCTION TABLE
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INPUTS |
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OUTPUT |
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nOE |
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nA |
nY |
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L |
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L |
L |
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L |
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H |
H |
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H |
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X |
Z |
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H = HIGH voltage level
L = LOW voltage level
X = Don't care
Z = High impedance OFF-state
1998 May 29 |
2 |
853±1933 19466 |
Philips Semiconductors |
Product specification |
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Hex buffer/line driver (3-State) |
74LV367 |
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PIN CONFIGURATION
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1OE |
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1 |
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16 |
VCC |
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1A |
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2 |
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15 |
2OE |
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1Y |
3 |
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14 |
6A |
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2A |
4 |
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13 |
6Y |
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2Y |
5 |
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12 |
5A |
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3A |
6 |
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11 |
5Y |
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3Y |
7 |
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10 |
4A |
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GND |
8 |
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9 |
4Y |
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SV00650
LOGIC SYMBOL
1A |
1Y |
2 |
3 |
2A |
2Y |
4 |
5 |
3A |
3Y |
6 |
7 |
4A |
4Y |
10 |
9 |
1OE |
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1 |
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5A |
5Y |
12 |
11 |
6A |
6Y |
14 |
13 |
2OE
15
SV00651
LOGIC SYMBOL (IEEE/IEC)
1
EN
2 |
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3 |
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4 |
5 |
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6 |
7 |
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10 |
9 |
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15 |
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EN |
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12 |
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11 |
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14 |
13 |
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SV00652
FUNCTIONAL DIAGRAM
1A |
1Y |
2 |
3 |
2A |
2Y |
4 |
5 |
3A |
3Y |
6 |
7 |
4A |
4Y |
10 |
9 |
1OE |
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1 |
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5A |
5Y |
12 |
11 |
6A |
6Y |
14 |
13 |
2OE |
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15 |
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SV00653
1998 May 29 |
3 |
Philips Semiconductors |
Product specification |
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Hex buffer/line driver (3-State) |
74LV367 |
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RECOMMENDED OPERATING CONDITIONS
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
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VCC |
DC supply voltage |
See Note 1 |
1.0 |
3.3 |
3.6 |
V |
VI |
Input voltage |
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0 |
± |
VCC |
V |
VO |
Output voltage |
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0 |
± |
VCC |
V |
Tamb |
Operating ambient temperature range in free air |
See DC and AC |
±40 |
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+85 |
°C |
characteristics |
±40 |
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+125 |
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VCC = 1.0V to 2.0V |
± |
± |
500 |
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tr, tf |
Input rise and fall times |
VCC = 2.0V to 2.7V |
± |
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200 |
ns/V |
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VCC = 2.7V to 3.6V |
± |
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100 |
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NOTE:
1. The LV is guaranteed to function down to VCC = 1.0V (input levels GND or VCC); DC characteristics are guaranteed from VCC = 1.2V to VCC = 3.6V.
ABSOLUTE MAXIMUM RATINGS1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL |
PARAMETER |
CONDITIONS |
RATING |
UNIT |
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VCC |
DC supply voltage |
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±0.5 to +4.6 |
V |
±IIK |
DC input diode current |
VI < ±0.5 or VI > VCC + 0.5V |
20 |
mA |
±IOK |
DC output diode current |
VO < ±0.5 or VO > VCC + 0.5V |
50 |
mA |
±IO |
DC output source or sink current |
±0.5V < VO < VCC + 0.5V |
35 |
mA |
± bus driver outputs |
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±IGND, |
DC VCC or GND current for types with |
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70 |
mA |
±bus driver outputs |
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±ICC |
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Tstg |
Storage temperature range |
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±65 to +150 |
°C |
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Power dissipation per package |
for temperature range: ±40 to +125°C |
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Ptot |
±plastic DIL |
above +70°C derate linearly with 12mW/K |
750 |
mW |
±plastic mini-pack (SO) |
above +70°C derate linearly with 8 mW/K |
500 |
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±plastic shrink mini-pack (SSOP and TSSOP) |
above +60°C derate linearly with 5.5 mW/K |
400 |
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NOTES:
1.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 May 29 |
4 |
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