Philips 74hc hct670 DATASHEETS
INTEGRATED CIRCUITS
DATA SH EET
For a complete data sheet, please also download:
•The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications
•The IC06 74HC/HCT/HCU/HCMOS Logic Package Information
•The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines
74HC/HCT670
4 x 4 register file; 3-state
Product specification
File under Integrated Circuits, IC06
December 1990
Philips Semiconductors Product specification
4 x 4 register file; 3-state 74HC/HCT670
FEATURES
• Simultaneous and independent read and write
operations
• Expandable to almost any word size and bit length
• Output capability: bus driver
• ICC category: MSI
GENERAL DESCRIPTION
The 74HC/HCT670 are high-speed Si-gate CMOS devices
and are pin compatible with low power Schottky TTL
(LSTTL). They are specified in compliance with JEDEC
standard no. 7A.
The 74HC/HCT670 are 16-bit 3-state register files
organized as 4 words of 4 bits each. Separated read and
write address inputs (R
, RBand WA,WB) and enable
A
inputs (RE andWE) are available, permitting simultaneous
writing into one word location and reading from another
location. The 4-bit word to be stored is presented to four
data inputs (D0 to D3). The WA and WB inputs determine
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf= 6 ns
amb
the location of the stored word. When the WE input is
LOW, the data is entered into the addressed location. The
addressed location remains transparent to the data while
the WE input is LOW. Data supplied at the inputs will be
read out in true (non-inverting) form from the 3-state
outputs (Q0 to Q3). Dnand Wninputs are inhibited when
WE is HIGH.
Direct acquisition of data stored in any of the four registers
is made possible by individual read address inputs
(RAand RB). The addressed word appears at the four
outputs when the RE is LOW. Data outputs are in the high
impedance OFF-state when RE is HIGH. This permits
outputs to be tied together to increase the word capacity to
very large numbers.
Design of the read enable signals for the stacked devices
must ensure that there is no overlap in the LOW levels
which would cause more than one output to be active at
the same time. Parallel expansion to generate n-bit words
is accomplished by driving the enable and address inputs
of each device in parallel.
SYMBOL PARAMETER CONDITIONS
t
PHL
C
C
/ t
I
PD
propagation delay Dn to Q
PLH
n
CL= 15 pF; VCC= 5 V 23 23 ns
input capacitance 3.5 3.5 pF
power dissipation capacitance per package notes 1 and 2 122 124 pF
Notes
1. C
is used to determine the dynamic power dissipation (PD in µW):
PD
PD=CPD× V
2
× fi+∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz
fo= output frequency in MHz
∑ (CL× V
2
× fo) = sum of outputs
CC
CL= output load capacitance in pF
VCC= supply voltage in V
2. For HC the condition is VI= GND to VCC;
for HCT the condition is VI= GND to VCC−1.5 V
ORDERING INFORMATION
“74HC/HCT/HCU/HCMOS Logic Package Information”
See
.
TYPICAL
UNIT
HC HCT
December 1990 2
Philips Semiconductors Product specification
4 x 4 register file; 3-state 74HC/HCT670
PIN DESCRIPTION
PIN NO. SYMBOL NAME AND FUNCTION
5, 4 R
8 GND ground (0 V)
10, 9, 7, 6 Q
11
12
14, 13 W
15, 1, 2, 3 D
16 V
, R
A
to Q
0
B
3
read address inputs
data outputs
RE 3-state output read enable input (active LOW)
WE write enable input (active LOW)
, W
A
to D
0
CC
B
3
write address inputs
data inputs
positive supply voltage
Fig.1 Pin configuration.
Fig.2 Logic symbol. Fig.3 IEC logic symbol. Fig.4 Functional diagram.
WRITE MODE SELECT TABLE
OPERATING
MODE
write data
INPUTS
WE D
LLL
HLH
INTERNAL
LATCHES
n
data latched H X no change
Note
1. The write address (WA and WB) to the
“internal latches” must be stable while WE is
LOW for conventional operation.
(1)
READ MODE SELECT TABLE
OPERATING
MODE
read
disabled H X Z
Notes
1. The selection of the “internal latches” by read address
(RA and RB) are not constrained by WE or RE operation.
H = HIGH voltage level
L = LOW voltage level
X = don’t care
Z = high impedance OFF-state
December 1990 3
INPUTS OUTPUT
RE INTERNAL LATCHES
L
L
L
H
(1)
Q
n
L
H
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