Philips 74hc hct4316 DATASHEETS

INTEGRATED CIRCUITS

DATA SH EET

For a complete data sheet, please also download:

•The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications

•The IC06 74HC/HCT/HCU/HCMOS Logic Package Information

•The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines

74HC/HCT4316

Quad bilateral switches

Product specification
File under Integrated Circuits, IC06

September 1993

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4316

FEATURES

• Low “ON” resistance:
160 Ω(typ.) at VCC− VEE= 4.5 V

120 Ω (typ.) at VCC− VEE= 6.0 V

80 Ω (typ.) at VCC− VEE= 9.0 V

• Logic level translation:
to enable 5 V logic to communicate
with ± 5 V analog signals

• Typical “break before make” built in

• Output capability: non-standard

• ICC category: MSI

The 74HC/HCT4316 have four independent analog
switches. Each switch has two input/output terminals
(nY, nZ) and an active HIGH select input (nS). When the
enable input (
turned off.

Current through a switch will not cause additional V
current provided the voltage at the terminals of the switch
is maintained within the supply voltage range;
VCC>> (VY, VZ) >> VEE. Inputs nY and nZ are electrically
equivalent terminals.

VCC and GND are the supply voltage pins for the digital
control inputs (E and nS). The VCC to GND ranges are 2.0
to 10.0 V for HC and 4.5 to 5.5 V for HCT.

GENERAL DESCRIPTION

The 74HC/HCT4316 are high-speed Si-gate CMOS
devices. They are specified in compliance with JEDEC
standard no. 7A.

The analog inputs/outputs (nY and nZ) can swing between
VCC as a positive limit and VEE as a negative limit.
VCC− VEE may not exceed 10.0 V.

See the “4016” for the version without logic level
translation.

QUICK REFERENCE DATA

VEE= GND = 0 V; T

=25°C; tr=tf= 6 ns

amb

SYMBOL PARAMETER CONDITIONS

t

PZH

t

PZL

t

PHZ

C
C
C

/ t

I
PD
S

turn “ON” time CL= 15 pF; RL=1 kΩ;

E to V
nS to V

OS

OS

VCC=5 V

turn “ON” time

E to V

OS

turn “OFF” time

PLZ

nS to V

E to V
nS to V

OS

OS

OS

input capacitance 3.5 3.5 pF
power dissipation capacitance per switch notes 1 and 2 13 14 pF
max. switch capacitance 5 5 pF

E) is HIGH, all four analog switches are

CC

TYPICAL

UNIT

HC HCT

19 19 ns
16 17 ns

19 24 ns
16 21 ns

20 21 ns
16 19 ns

Notes

1. CPD is used to determine the dynamic power

dissipation (PD in µW):

PD=CPD× V

2

× fi+∑{(CL+CS)×V

CC

CC

2

× fo}

where:
fi= input frequency in MHz
fo= output frequency in MHz
∑ {(CL+CS)×V

2

× fo} = sum of outputs

CC

September 1993 2

CL= output load capacitance in pF
CS= max. switch capacitance in pF
VCC= supply voltage in V

2. For HC the condition is VI= GND to V

CC

For HCT the condition is VI= GND to VCC− 1.5 V

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4316

ORDERING INFORMATION

See

“74HC/HCT/HCU/HCMOS Logic Package Information”

PIN DESCRIPTION

PIN NO. SYMBOL NAME AND FUNCTION

1, 4, 10, 13 1Z to 4Z independent inputs/outputs
2, 3, 11, 12 1Y to 4Y independent inputs/outputs
7

E enable input (active LOW)
8 GND ground (0 V)
9V

EE

negative supply voltage
15, 5, 6, 14 1S to 4S select inputs (active HIGH)
16 V

CC

positive supply voltage

.

Fig.1 Pin configuration. Fig.2 Logic symbol. Fig.3 IEC logic symbol.

September 1993 3

(b)

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4316

FUNCTION TABLE

INPUTS

EnS

L
L

H X off

Note

1. H = HIGH voltage level
L = LOW voltage level
X = don’t care

APPLICATIONS

• Signal gating

• Modulation

• Demodulation

• Chopper

SWITCH

L

H

off
on

Fig.4 Functional diagram.

Fig.5 Schematic diagram (one switch).

September 1993 4

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4316

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)
Voltages are referenced to VEE= GND (ground = 0 V)

SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS

V

CC

±I

IK

±I

SK

±I

S

±I

EE

±I

;

CC

±I

GND

T

stg

P

tot

P

S

DC supply voltage −0.5 +11.0 V
DC digital input diode current 20 mA for VI<−0.5 V or VI> VCC+ 0.5 V
DC switch diode current 20 mA for VS<−0.5 V or VS> VCC+ 0.5 V
DC switch current 25 mA for −0.5 V < VS< VCC+ 0.5 V
DC VEE current 20 mA
DC VCC or GND current 50 mA

storage temperature range −65 +150 °C
power dissipation per package for temperature range: −40 to +125 °C

74HC/HCT
plastic DIL 750 mW above +70 °C: derate linearly with 12 mW/K
plastic mini-pack (SO) 500 mW above +70 °C: derate linearly with 8 mW/K
power dissipation per switch 100 mW

Note to ratings

To avoid drawing V

current out of terminal Z, when switch current flows in terminals Yn, the voltage drop across the

CC

bidirectional switch must not exceed 0.4 V. If the switch current flows into terminals Z, no VCC current will flow out of
terminal Yn. In this case there is no limit for the voltage drop across the switch, but the voltages at Yn and Z may not
exceed VCC or VEE.

RECOMMENDED OPERATING CONDITIONS

74HC 74HCT

SYMBOL PARAMETER

UNIT CONDITIONS

min. typ. max. min. typ. max.

V

CC

V

CC

V

I

V

S

T

amb

T

amb

t

, t

r

f

DC supply voltage VCC−GND 2.0 5.0 10.0 4.5 5.0 5.5 V see Figs 6 and 7
DC supply voltage VCC−V

EE

DC input voltage range GND V
DC switch voltage range V

2.0 5.0 10.0 2.0 5.0 10.0 V see Figs 6 and 7

EE

CC

V

CC

GND V
V

EE

V

CC
CC

V

V
operating ambient temperature range −40 +85 −40 +85 °C see DC and AC
operating ambient temperature range −40 +125 −40 +125 °C
input rise and fall times

6.0

1000
500
400

6.0 500

250

CHARACTERISTICS

ns VCC= 2.0 V

VCC= 4.5 V
VCC= 6.0 V
VCC= 10.0 V

September 1993 5