Philips 74hc hct1g66 DATASHEETS

INTEGRATED CIRCUITS

DATA SH EET

74HC1G66; 74HCT1G66

Bilateral switch

Product specification
File under Integrated Circuits, IC06

1998 Aug 03

Philips Semiconductors Product specification

Bilateral switch

FEATURES

• Wide operating voltage range:

2.0 to 9.0 V

• Very low ON resistance
45 Ω (TYP.) at VCC= 4.5 V
30 Ω (TYP.) at VCC= 6.0 V
25 Ω (TYP.) at VCC= 9.0 V

• High noise immunity

• Low power dissipation

• Very small 5 pins package

• Output capability: non standard.

DESCRIPTION

The 74HC1G/HCT1G66 is a
high-speed Si-gate CMOS device.

The 74HC1G/HCT1G66 provides an
analog switch. The switch has two
input/output terminals (Y, Z) and an
active HIGH enable input (E). When E
is LOW, the analog switch is turned
off.

The non standard output currents are
equal compared to the
74HC/HCT4066.

FUNCTION TABLE

INPUTS E

(1)

L OFF

HON

SWITCH

QUICK REFERENCE DATA

GND = 0 V; T

=25°C; tr=tf= 6.0 ns.

amb

SYMBOL PARAMETER CONDITIONS

t

PZH/tPZL

t

PHZ/tPLZ

C

I

turn-on time
EtoV

os

turn-off time
EtoV

os

input

CL=15pF
RL=1kΩ
VCC=5V

capacitance

C

PD

power

notes 1 and 2 9 9 pF
dissipation
capacitance

C

S

max. switch
capacitance

Notes

1. C

is used to determine the dynamic power dissipation (PDin µW).

PD

PD=CPD× V

2

× fi+ ∑ ((CL+CS)× V

CC

2

× fo) where:

CC

fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
CS= max. switch capacitance in pF;
VCC= supply voltage in V;
∑ ((CL+CS)× V

2. For HC1G the condition is VI= GND to V

2

× fo) = sum of outputs.

CC

CC.

For HCT1G the condition is VI= GND to VCC− 1.5 V.

PINNING

74HC1G66;

74HCT1G66

TYP.

UNIT

HC1G HCT1G

11 12 ns

11 12 ns

1.5 1.5 pF

88 pF

Note

1. H = HIGH voltage level;
L = LOW voltage level.

PIN SYMBOL DESCRIPTION

1 Y independent input/output
2 Z independent input/output
3 GND ground (0 V)
4 E enable input (active HIGH)
5V

1998 Aug 03 2

CC

DC positive supply voltage

Philips Semiconductors Product specification

Bilateral switch

74HC1G66;

74HCT1G66

ORDERING INFORMATION

PACKAGE

OUTSIDE NORTH AMERICA

74HC1G66GW
74HCT1G66GW 5 SC-88A plastic SOT353 TL

handbook, halfpage

GND

Y

1

Z

2
3

TEMPERATURE

−40 to +125 °C

5

66

4

MNA074

RANGE

V

CC

E

PINS PACKAGE MATERIAL CODE MARKING

5 SC-88A plastic SOT353 HL

handbook, halfpage

4

1

Y

E

2

Z

MNA075

handbook, halfpage

Fig.1 Pin configuration.

1
4 #

1
X1

1

MNA076

Fig.3 IEC logic symbol.

Fig.2 Logic symbol.

handbook, halfpage

E

2

V

GND

CC

Y

V

CC

Z

MNA077

Fig.4 Logic diagram.

1998 Aug 03 3

Philips Semiconductors Product specification

Bilateral switch

74HC1G66;

74HCT1G66

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER

V

CC

V

I

V

S

T

amb

DC supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 V
DC input voltage range GND − V
DC switch voltage range GND − V
operating ambient

temperature range

t

r,tf

input rise and fall times
except for Schmitt-trigger
inputs

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V);
see note 1.

74HC1G66 74HCT1G66

UNIT CONDITIONS

MIN. TYP. MAX. MIN. TYP. MAX.

GND − V

CC

GND − V

CC

CC
CC

V
V

−40 − +125 −40 − +125 °C see DC and AC
characteristics per
device

−−1000 −−− ns VCC= 2.0 V

− 6.0 500 − 6.0 500 ns V

−−400 −−− ns V

−−250 −−− ns V

= 4.5 V

CC

= 6.0 V

CC

= 10.0 V

CC

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

±I

IK

±I

SK

±I

S

±I

CC

T

stg

P

D

DC supply voltage −0.5 11.0 V
DC digital input diode current VI<−0.5 or VI> VCC+ 0.5 V − 20 mA
DC switch diode current VS<−0.5 or VS> VCC+ 0.5 V − 20 mA
DC switch output current −0.5V < VS< VCC+ 0.5 V − 25 mA
DC VCC or GND current − 50 mA
storage temperature −65 +150 °C
power dissipation per package for temperature range: −40 to + 125 °C; − 200 mW
5 pins plastic SC88A above +55 °C derate linearly with 2.5 mW/K

P

S

power dissipation per switch − 100 mW

Note

1. To avoid drawing V

current out of terminal Z, when switch current flows in terminal Y, the voltage drop across the

CC

bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal Z, no VCC current will flow out of
terminal Y. In this case there is no limit for the voltage drop across the switch, but the voltage at Y and Z may not
exceed VCC or GND.

1998 Aug 03 4

Philips Semiconductors Product specification

Bilateral switch

DC CHARACTERISTICS FOR THE 74HC1G66

Over recommended operating conditions.; voltages are referenced to GND (ground = 0 V).

T

(°C)

amb

SYMBOL PARAMETER

V

IH

HIGH-level input
voltage

V

IL

LOW-level input
voltage

±I

I

±I

S

input leakage current − 0.1 1.0 − 1.0 µA 6.0 VI=VCCor GND

analog switch
OFF-state current

±I

S

analog switch
ON-state current

I

CC

quiescent supply
current

−40 to +85 −40 to +125

MIN. TYP.

(1)

MAX. MIN. MAX.

1.5 1.2 − 1.5 − V 2.0

3.15 2.4 − 3.15 − V 4.5

4.2 3.2 − 4.2 − V 6.0

6.3 4.7 − 6.3 − V 9.0

− 0.8 0.5 − 0.5 V 2.0

− 2.1 1.35 − 1.35 V 4.5

− 2.8 1.8 − 1.8 V 6.0

− 4.3 2.7 − 2.7 V 9.0

− 0.2 2.0 − 2.0 µA 10.0

− 0.1 1.0 − 1.0 µA 10.0 VI=VIHor VIL;

− 0.1 1.0 − 1.0 µA 10.0 VI=VIHor VIL;

− 1.0 10 − 20 µA 6.0 VI=VCCor GND;

− 2.0 20 − 40 µA 10.0

UNIT

74HC1G66;

74HCT1G66

TEST CONDITIONS

VCC (V) OTHER

|VS|=VCC− GND;
see Fig.6

|VS|=VCC− GND;
see Fig.7

Vis= GND or VCC;
Vos=VCCor GND

Note

1. All typical values are measured at T

amb

=25°C.

1998 Aug 03 5