Philips 74hc hct1g04 DATASHEETS
INTEGRATED CIRCUITS
DATA SH EET
74HC1G04; 74HCT1G04
Inverter
Product specification
File under Integrated Circuits, IC06
1998 Aug 31
Philips Semiconductors Product specification
Inverter 74HC1G04; 74HCT1G04
FEATURES
• Wide operating voltage:
2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 5 pins package
• Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G04 is a
high-speed Si-gate CMOS device.
The 74HC1G/HCT1G04 provides the
inverting buffer. The standard output
currents are half the values compared
to the 74HC/HCT04.
FUNCTION TABLE
See note 1.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤6.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
, t
t
PHL
C
I
C
PD
propagation delay
PLH
inA to outY
CL= 15 pF;
VCC=5V
input capacitance 1.5 1.5 pF
power dissipation
notes 1 and 2 16 18 pF
capacitance
Notes
1. C
is used to determine the dynamic power dissipation PD(µW).
PD
PD=CPD× V
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in V;
∑ (CL× V
2. For HC1G the condition is VI= GND to V
2
× fo) = sum of outputs.
CC
CC.
For HCT1G the condition is VI= GND to VCC− 1.5 V.
TYPICAL
UNIT
HC1G HCT1G
78ns
INPUT OUTPUT
inA outY
LH
HL
Note
1. H = HIGH voltage level;
L = LOW voltage level.
PINNING
PIN SYMBOL DESCRIPTION
1 n.c. not connected
2 inA data input A
3 GND ground (0 V)
4 outY data output
5V
CC
DC supply voltage
1998 Aug 31 2
Philips Semiconductors Product specification
Inverter 74HC1G04; 74HCT1G04
ORDERING AND PACKAGE INFORMATION
OUTSIDE NORTH
PACKAGES
AMERICA
74HC1G04GW
74HCT1G04GW 5 SC-88A plastic SOT353 TC
handbook, halfpage
n.c.
inA
GND
TEMPERATURE
−40 to +125 °C
1
2
04
3
MNA107
RANGE
V
5
outY
4
CC
PINS PACKAGE MATERIAL CODE MARKING
5 SC-88A plastic SOT353 HC
handbook, halfpage
inA outY
2
4
MNA108
handbook, halfpage
Fig.1 Pin configuration.
2
1
MNA109
4
Fig.3 IEC logic symbol.
handbook, halfpage
Fig.2 Logic symbol.
inA
Fig.4 Logic diagram.
outY
MNA110
1998 Aug 31 3
Philips Semiconductors Product specification
Inverter 74HC1G04; 74HCT1G04
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER
UNIT CONDITIONS
MIN. TYP. MAX. MIN. TYP. MAX.
74HC1G04 74HCT1G04
V
CC
V
I
V
O
T
amb
DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient
−40 +25 +125 −40 +25 +125 °C see DC and AC
CC
CC
0 − V
0 − V
CC
CC
temperature
V
V
characteristics
per device
t
, t
r
f
input rise and fall times
except for Schmitt
trigger inputs
−−1000 −−−ns VCC= 2.0 V
−−500 −−500 ns V
−−400 −−−ns V
CC
CC
= 4.5 V
= 6.0 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
±I
IK
±I
OK
±I
O
DC supply voltage −0.5 +7.0 V
DC input diode current VI<−0.5VorVI>VCC+ 0.5 V; note 1 − 20 mA
DC output diode current VO<−0.5V or VO> VCC+ 0.5 V; note 1 − 20 mA
DC output source or sink
−0.5V < VO< VCC+ 0.5 V; note 1 − 12.5 mA
current standard outputs
±I
CC
DC VCC or GND current for
note 1 − 25 mA
types with standard outputs
T
stg
P
D
storage temperature −65 +150 °C
power dissipation per package temperature range: −40 to +125 °C; note 2 − 200 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above +55 °C the value of P
derates linearly with 2.5 mW/K.
D
1998 Aug 31 4
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