Philips 74hc1gu04 DATASHEETS

INTEGRATED CIRCUITS

DATA SH EET

74HC1GU04

Inverter

Product specification
File under Integrated Circuits, IC06

1998 Nov 18

Philips Semiconductors Product specification

Inverter 74HC1GU04

FEATURES

• Wide operating voltage:

2.0 to 6.0 V

• Symmetrical output impedance

• Low power dissipation

• Balanced propagation delays

• Very small 5-pin package

• Output capability: standard.

DESCRIPTION

The 74HC1GU04 is a high-speed
Si-gate CMOS device.

The 74HC1GU04 provides the
inverting single stage function.
The standard output currents are
compared to the 74HCU04.

FUNCTION TABLE

See note 1.

INPUT

inA

OUTPUT

outY

LH

HL

Note

1. H = HIGH voltage level;
L = LOW voltage level.

QUICK REFERENCE DATA

GND = 0 V; T

=25°C; tr=tf= 6.0 ns.

amb

SYMBOL PARAMETER CONDITIONS TYP. UNIT

t

PHL/tPLH

propagation
delay inA to outY

C

I

C

PD

input capacitance 5 pF
power

dissipation
capacitance

Notes

1. C

is used to determine the dynamic power dissipation (PDin µW).

PD

PD=CPD× V

2

× fi+ ∑ (CL× V

CC

fi= input frequency in MHz;
fo= output frequency in MHz;

1

⁄

2

CL= output load capacitance in pF;
VCC= supply voltage in V;
∑ (CL× V

2

× fo) = sum of outputs.

CC

2. For HC1G the condition is VI= GND to V

PINNING

PIN SYMBOL DESCRIPTION

1 n.c. not connected
2 inA data input
3 GND ground (0 V)
4 outY data output
5V

CC

CL= 15 pF;

5ns

VCC=5V

notes 1 and 2 14 pF

2

× fo) where:

CC

CC.

DC supply voltage

1998 Nov 18 2

Philips Semiconductors Product specification

Inverter 74HC1GU04

ORDERING INFORMATION

OUTSIDE NORTH

PACKAGES

AMERICA

TEMPERATURE

RANGE

PINS PACKAGE MATERIAL CODE MARKING

74HC1GU04GW −40 to +125 °C 5 SC-88A plastic SOT353 HD

handbook, halfpage

n.c.

inA

GND

1
2

U04

3

MNA042

V

5

CC

handbook, halfpage

outY

4

inA outY

2

4

MNA043

handbook, halfpage

Fig.1 Pin configuration.

2

1

MNA044

Fig.3 IEC logic symbol.

Fig.2 Logic symbol.

4

handbook, halfpage

inA outY

MNA045

Fig.4 Logic diagram.

1998 Nov 18 3

Philips Semiconductors Product specification

Inverter 74HC1GU04

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER CONDITIONS

UNIT

MIN. TYP. MAX.

74HC1G

V

CC

V

I

V

O

T

amb

t

, t

r

f

DC supply voltage 2.0 5.0 6.0 V
input voltage 0 − V
output voltage 0 − V
operating ambient

temperature range
input rise and fall times except

for Schmitt-trigger inputs

see DC and AC

−40 +25 +125 °C

characteristics per device
VCC= 2.0 V −−1000 ns
V

= 4.5 V −−500 ns

CC

V

= 6.0 V −−400 ns

CC

CC
CC

V
V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0 V).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

±I

IK

±I

OK

±I

O

±I

CC

T

stg

P

D

DC supply voltage −0.5 +7.0 V
DC input diode current
DC output diode current
DC output source or sink

current standard outputs
DC VCC or GND current for

types with standard outputs

(1)

(1)

VI<−0.5 or VI> VCC+ 0.5 V − 20 mA
VO<−0.5 or VO> VCC+ 0.5 V − 20 mA

−0.5 V < VO< VCC+ 0.5 V − 12.5 mA

(1)

− 25 mA

(1)

storage temperature range −65 +150 °C
power dissipation per

package 5 pins plastic SC-88A

for temperature range: −40 to +125 °C;
above +55 °C PD derates linearly with

− 200 mW

2.5 mW/K

Note

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

1998 Nov 18 4

Philips Semiconductors Product specification

Inverter 74HC1GU04

DC CHARACTERISTICS FOR THE 74HC1GU04

Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V).

SYMBOL PARAMETER

V

IH

HIGH-level input
voltage

V

IL

V

OH

LOW-level input voltage 2.0 − 0.6 0.3 − 0.3 V

HIGH-level output
voltage; all outputs

V

OH

HIGH-level output
voltage; standard
outputs

V

OL

LOW-level output
voltage; all outputs

V

OL

LOW-level output
voltage; standard
outputs

I

I

I

CC

input leakage current VI=VCCor GND 6.0 −− 1.0 − 1.0 µA
quiescent supply

current

TEST CONDITIONS T

−40 to +85 −40 to +125

OTHER VCC (V)

MIN. TYP.

2.0 1.7 1.4 − 1.7 − V

4.5 3.6 2.6 − 3.6 − V

6.0 4.8 3.4 − 4.8 − V

4.5 − 1.9 0.9 − 0.9 V

6.0 − 2.6 1.2 − 1.2 V

VI=VIHor VIL,

−IO=20µA

2.0 1.8 2.0 − 1.8 − V

4.5 4.0 4.5 − 4.0 − V

6.0 5.5 6.0 − 5.5 − V

VI=VIHor VIL,

4.5 4.13 4.32 − 3.7 − V

−IO= 2.0 mA
V

I=VIH

or VIL,

6.0 5.63 5.81 − 5.2 − V

−IO= 2.6 mA
VI=VIHor VIL,

IO=20µA

2.0 − 0 0.2 − 0.2 V

4.5 − 0 0.5 − 0.5 V

6.0 − 0 0.5 − 0.5 V

VI=VIHor VIL,

4.5 − 0.15 0.33 − 0.4 V

IO= 2.0 mA
V

I=VIH

or VIL,

6.0 − 0.16 0.33 − 0.4 V

IO= 2.6 mA

VI=VCC or GND,

6.0 −− 10 − 20 µA

IO=0

(°C)

amb

(1)

MAX. MIN. MAX.

UNIT

Note

1. All typical values are measured at T

amb

=25°C.

1998 Nov 18 5