Philips 74HCT1G32GW, 74HC1G32GW Datasheet

INTEGRATED CIRCUITS
74HC1G32 74HCT1G32
2-input OR gate
Product specification File under Integrated Circuits, IC06
1997 Dec 16
2-input OR gate
FEATURES
Wide operating voltage :
2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 5 pins package
Output capability : standard
DESCRIPTION
The 74HC1G/HCT1G32 is a highspeed Si-gate CMOS device.
The 74HC1G/HCT1G32 provides the 2-input OR function. The standard output currents are1⁄2 compared to the 74HC/HCT32.
FUNCTION TABLE
INPUTS OUTPUT
inA inB outY
L L L
L H H H L H H H H
H = HIGH voltage level L = LOW voltage level
74HC1G32
74HCT1G32
QUICK REFERENCE DATA
GND = 0 V; T
SYMBOL PARAMETER CONDITIONS
t
/ t
PHL
PLH
C
I
C
PD
Notes
1. CPDis used to determine the dynamic power dissipation (PDin µW). PD= CPD× V fi= input frequency in MHz; fo= output frequency in MHz; CL= output load capacitance in pF; VCC= supply voltage in V; (CV
2. For HC1G the condition is VI= GND to V For HCT1G the condition is VI= GND to VCC 1.5 V.
PIN DESCRIPTION
PIN NO. SYMBOL NAME AND FUNCTION
1, 2 inB, inA data inputs 3 GND ground (0 V) 4 outY data output 5 V
= 25 °C; tr= tf≤ 6.0 ns
amb
propagation delay
inA, inB to outY input
capacitance power
dissipation capacitance
2
× fi+ (CL× V
CC
2
× fo) = sum of outputs.
CC
CL= 15 pF VCC = 5 V
notes 1 and 2
2
× fo) where:
CC
CC
TYPICAL
HC1G HCT1G
8 10 ns
1.5 1.5 pF
19 20 pF
CC.
positive supply voltage
UNIT
1997 Dec 16 2
Philips Semiconductors Product specification
Fig.1 Pin configuration.
1 2 3
inA
inB
GND
V
CC
outY
5
4
32
Fig.2 Logic symbol.
inA
inB
outY
1
2
4
Fig.3 IEC logic symbol.
1
2
4
>
1
Fig.4 Logic diagram.
inA
inB
outY
2-input OR gate
74HC1G32
74HCT1G32
ORDERING AND PACKAGE INFORMATION
OUTSIDE
NORTH
AMERICA
74HC1G32GW 74HCT1G32GW 5 SC88A plastic SOT353 TG
NORTH
AMERICA
TEMPERATURE
RANGE
40 °C to +125 °C
PINS PACKAGE MATERIAL CODE MARKING
5 SC88A plastic SOT353 HG
PACKAGES
1997 Dec 16 3
Philips Semiconductors Product specification
2-input OR gate
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER
V
CC
V
I
V
O
T
amb
DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V input voltage 0 V output voltage 0 V operating ambient
temperature range 40 25 +125 40 25 +125 °C
input rise and fall times
tr,t
f
except for Schmitt-trigger inputs
ABSOLUTE MAXIMUM RATINGS
Limiting values is accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0 V)
74HC1G 74HCT1G
MIN. TYP. MAX. MIN. TYP. MAX.
CC CC
0 V 0 V
CC CC
1000
500 500 VCC = 4.5 V
400 VCC = 6.0 V
74HC1G32
74HCT1G32
UNIT CONDIITIONS
V V
see DC and AC characteristics per device
VCC = 2.0 V
ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
±I
IK
±I
OK
±I
O
±I
CC
T
stg
P
D
DC supply voltage 0.5 +7.0 V DC input diode current VI< - 0.5 or VI> VCC + 0.5 V 20 mA DCoutput diode current VO< - 0.5 or VO> VCC + 0.5 V 20 mA DC output source or sink
current standard outputs DC VCC or GND current for
types with standard outputs
0.5V < VO< VCC+ 0.5 V 12.5 mA
25 mA
storage temperature range 65 +150 °C power dissipation per package for temperature range: 40 to + 125 °C
5 pins plastic SC88A above +55 °C derate linearly with 2.5 mW/K
200 mW
Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under ‘recommended operating conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1997 Dec 16 4
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