Philips 74HC1G32, 74HCT1G32 Technical data
INTEGRATED CIRCUITS
DATA SH EET
74HC1G32; 74HCT1G32
2-input OR gate
Product specification
Supersedes data of 2001 Apr 06
2002 May 15
Philips Semiconductors Product specification
2-input OR gate 74HC1G32; 74HCT1G32
FEATURES
• Wide operating voltage from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
DESCRIPTION
The 74HC1G/HCT1G32 is a highspeed Si-gate CMOS
device.
The 74HC1G/HCT1G32provides the 2-input OR function.
The standard output currents are1/2 compared to the
74HC/HCT32.
• Balanced propagation delays
• Very small 5 pins package
• Output capability: standard.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤6.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
PD
propagation delay A and B to Y CL= 15 pF; VCC= 5 V 8 10 ns
input capacitance 1.5 1.5 pF
power dissipation capacitance notes 1 and 2 19 20 pF
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+(CL×V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
= output load capacitance in pF;
C
L
VCC= supply voltage in Volts.
2. For HC1G the conditions is VI= GND to VCC.
For HCT1G the conditions is VI= GND to VCC− 1.5 V.
TYPICAL
UNIT
HC1G HCT1G
FUNCTION TABLE
See note 1.
INPUTS OUTPUT
ABY
LLL
LHH
HLH
HHH
Note
1. H = HIGH voltage level;
L = LOW voltage level.
2002 May 15 2
Philips Semiconductors Product specification
2-input OR gate 74HC1G32; 74HCT1G32
ORDERING INFORMATION
PACKAGES
TYPE NUMBER
74HC1G32GW −40 to +125 °C 5 SC88A plastic SOT353 HG
74HCT1G32GW −40 to +125 °C 5 SC88A plastic SOT353 TG
74HC1G32GV −40 to +125 °C 5 SC-74A plastic SOT753 H32
74HCT1G32GV −40 to +125 °C 5 SC-74A plastic SOT753 T32
PIN DESCRIPTION
PIN SYMBOL DESCRIPTION
1 B data input B
2 A data input A
3 GND ground (0 V)
4 Y data output Y
5V
TEMPERATURE
RANGE
CC
PINS PACKAGE MATERIAL CODE MARKING
supply voltage
handbook, halfpage
handbook, halfpage
GND
B
1
A
2
32
3
MNA163
V
5
Y
4
Fig.1 Pin configuration.
1
2
≥1
MNA165
CC
handbook, halfpage
1
B
2
A
MNA164
4
Y
Fig.2 Logic symbol.
handbook, halfpage
4
B
Y
A
MNA166
Fig.3 IEC logic symbol.
2002 May 15 3
Fig.4 Logic diagram.
Philips Semiconductors Product specification
2-input OR gate 74HC1G32; 74HCT1G32
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74HC1G 74HCT1G
V
CC
V
I
V
O
T
amb
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient
temperature
see DC and AC
characteristics per
−40 +25 +125 −40 +25 +125 °C
0 − V
CC
0 − V
CC
CC
CC
V
V
device
t
r,tf
input rise and fall
times
VCC= 2.0 V −−1000 −−−ns
= 4.5 V −−500 −−500 ns
V
CC
V
= 6.0 V −−400 −−−ns
CC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
notes 1 and 2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
supply voltage −0.5 +7.0 V
input diode current VI< −0.5 V or VI>VCC+ 0.5 V −±20 mA
output diode current VO< −0.5 V or VO>VCC+ 0.5 V −±20 mA
output source or sink current −0.5V<VO<VCC+ 0.5 V −±12.5 mA
VCC or GND current −±25 mA
storage temperature −65 +150 °C
power dissipation per package for temperature range from −40 to +125 °C;
− 200 mW
note 3
Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
3. Above 55 °C the value of P
derates linearly with 2.5 mW/K.
D
2002 May 15 4
Philips Semiconductors Product specification
2-input OR gate 74HC1G32; 74HCT1G32
DC CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
V
IH
V
IL
V
OH
HIGH-level input voltage 2.0 1.5 1.2 − 1.5 − V
LOW-level input voltage 2.0 − 0.8 0.5 − 0.5 V
HIGH-level output
voltage
V
OL
I
Ll
I
CC
LOW-level output voltage VI=VIHor VIL;
input leakage current VI=VCCor GND 6.0 −−1.0 − 1.0 µA
quiescent supply current VI=VCCor GND;
TEST CONDITIONS T
OTHER
V
(V)
CC
−40 to +85 −40 to +125
MIN. TYP.
4.5 3.15 2.4 − 3.15 − V
6.0 4.2 3.2 − 4.2 − V
4.5 − 2.1 1.35 − 1.35 V
6.0 − 2.8 1.8 − 1.8 V
VI=VIHor VIL;
2.0 1.9 2.0 − 1.9 − V
IO= −20 µA
V
I=VIH
or VIL;
4.5 4.4 4.5 − 4.4 − V
IO= −20 µA
V
I=VIH
or VIL;
6.0 5.9 6.0 − 5.9 − V
IO= −20 µA
V
I=VIH
or VIL;
4.5 4.13 4.32 − 3.7 − V
IO= −2.0 mA
V
I=VIH
or VIL;
6.0 5.63 5.81 − 5.2 − V
IO= −2.6 mA
2.0 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
4.5 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
6.0 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
4.5 − 0.15 0.33 − 0.4 V
IO= 2.0 mA
V
I=VIH
or VIL;
6.0 − 0.16 0.33 − 0.4 V
IO= 2.6 mA
6.0 −−10 − 20 µA
IO=0
(°C)
amb
(1)
MAX. MIN. MAX.
UNIT
Note
1. All typical values are measured at T
amb
=25°C.
2002 May 15 5
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