Philips 74HC1G14, 74HCT1G14 User Manual
INTEGRATED CIRCUITS
DATA SH EET
74HC1G14; 74HCT1G14
Inverting Schmitt-triggers
Product specification
Supersedes data of 2001 Mar 02
2002 May 15
Philips Semiconductors Product specification
Inverting Schmitt-triggers 74HC1G14; 74HCT1G14
FEATURES
• Wide operating voltage range from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 5 pins package
• Applications
DESCRIPTION
The 74HC1G/HCT1G14 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G14 provides the inverting buffer
function with Schmitt-trigger action. These devices are
capable oftransformingslowly changing input signals into
sharply defined, jitter-free output signals.
The standard output currents are1⁄2 compared to the
74HC/HCT14.
– Wave and pulse shapers
– Astable multivibrators
– Monostable multivibrators
• Output capability: standard.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf= 6.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
PD
propagation delay A to Y CL= 15 pF VCC= 5 V 10 15 ns
input capacitance 1.5 1.5 pF
power dissipation capacitance notes 1 and 2 20 22 pF
TYPICAL
UNIT
HC1G HCT1G
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
= output load capacitance in pF;
C
L
VCC= supply voltage in Volts;
∑ (CL× V
2
× fo) = sum of outputs.
CC
2. For HC1G the condition is VI= GND to VCC.
For HCT1G the condition is VI= GND to VCC− 1.5 V.
FUNCTION TABLE
See note 1.
INPUT OUTPUT
AY
LH
HL
Note
1. H = HIGH voltage level;
L = LOW voltage level.
2002 May 15 2
Philips Semiconductors Product specification
Inverting Schmitt-triggers 74HC1G14; 74HCT1G14
ORDERING AND PACKAGE INFORMATION
OUTSIDE NORTH
PACKAGES
AMERICA
TEMPERATURE
RANGE
PINS PACKAGE MATERIAL CODE MARKING
74HC1G14GW −40 to +125 °C 5 SC-88A plastic SOT353 HF
74HCT1G14GW −40 to +125 °C 5 SC-88A plastic SOT353 TF
74HC1G14GV −40 to +125 °C 5 SC-74A plastic SOT753 H14
74HCT1G14GV −40 to +125 °C 5 SC-74A plastic SOT753 T14
PINNING
PIN SYMBOL DESCRIPTION
1 n.c. not connected
2 A data input A
3 GND ground (0 V)
4 Y data output Y
5V
handbook, halfpage
n.c
GND
CC
1
A
2
14
3
MNA022
V
5
CC
Y
4
supply voltage
handbook, halfpage
AY
2
4
MNA023
Fig.1 Pin configuration.
handbook, halfpage
24
MNA024
Fig.3 IEC logic symbol.
2002 May 15 3
handbook, halfpage
Fig.2 Logic symbol.
A
Fig.4 Logic diagram.
Y
MNA025
Philips Semiconductors Product specification
Inverting Schmitt-triggers 74HC1G14; 74HCT1G14
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74HC1G 74HCT1G
V
CC
V
I
V
O
T
amb
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient
temperature
see DC and AC
characteristics per device
−40 +25 +125 −40 +25 +125 °C
0 − V
CC
0 − V
CC
CC
CC
V
V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
supply voltage −0.5 +7.0 V
input diode current VI<−0.5 V or VI> VCC+ 0.5 V; note 1 −±20 mA
output diode current VO<−0.5 V or VO> VCC+ 0.5 V; note 1 −±20 mA
output source or sink current −0.5 V < VO< VCC+ 0.5 V; note 1 −±12.5 mA
VCC or GND current note 1 −±25 mA
storage temperature −65 +150 °C
power dissipation per package for temperature range from −40 to +125 °C;
− 200 mW
note 2
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55 °C the value of PD derates linearly with 2.5 mW/K.
2002 May 15 4
Philips Semiconductors Product specification
Inverting Schmitt-triggers 74HC1G14; 74HCT1G14
DC CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
V
OH
HIGH-level output
voltage
V
OL
LOW-level output
voltage
I
LI
I
CC
input leakage current VI=VCCor GND 6.0 −− 1.0 − 1.0 µA
quiescent supply
current
TEST CONDITIONS T
−40 to +85 −40 to +125
OTHER VCC (V)
MIN. TYP.
VI=VIHor VIL;
2.0 1.9 2.0 − 1.9 − V
IO= −20 µA
V
I=VIH
or VIL;
4.5 4.4 4.5 − 4.4 − V
IO= −20 µA
V
I=VIH
or VIL;
6.0 5.9 6.0 − 5.9 − V
IO= −20 µA
V
I=VIH
or VIL;
4.5 4.13 4.32 − 3.7 − V
IO= −2.0 mA
V
I=VIH
or VIL;
6.0 5.63 5.81 − 5.2 − V
IO= −2.6 mA
VI=VIHor VIL;
2.0 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
4.5 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
6.0 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
4.5 − 0.15 0.33 − 0.4 V
IO= 2.0 mA
V
I=VIH
or VIL;
6.0 − 0.16 0.33 − 0.4 V
IO= 2.6 mA
VI=VCCor GND;
6.0 −− 10 − 20 µA
IO=0
(°C)
amb
(1)
MAX. MIN. MAX.
UNIT
Note
1. All typical values are measured at T
amb
=25°C.
2002 May 15 5
Philips Semiconductors Product specification
Inverting Schmitt-triggers 74HC1G14; 74HCT1G14
Family 74HC1G14
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
V
T+
positive-going threshold see Figs 5 and 6 2.0 0.7 1.09 1.5 0.7 1.5 V
TEST CONDITIONS T
−40 to +85 −40 to +125
WAVEFORMS VCC (V)
MIN. TYP.
amb
(1)
4.5 1.7 2.36 3.15 1.7 3.15 V
6.0 2.1 3.12 4.2 2.1 4.2 V
V
T−
negative-going threshold see Figs 5 and 6 2.0 0.3 0.60 0.9 0.3 0.9 V
4.5 0.9 1.53 2.0 0.9 2.0 V
6.0 1.2 2.08 2.6 1.2 2.6 V
V
H
hysteresis (VT+− VT−) see Figs 5 and 6 2.0 0.2 0.48 1.0 0.2 1.0 V
4.5 0.4 0.83 1.4 0.4 1.4 V
6.0 0.6 1.04 1.6 0.6 1.6 V
Note
1. All typical values are measured at T
amb
=25°C.
Family 74HCT1G
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
V
OH
HIGH-level output
voltage
TEST CONDITIONS T
OTHER VCC (V)
MIN. TYP.
VI=VIHor VIL;
4.5 4.4 4.5 − 4.4 − V
IO= −20 µA
V
I=VIH
or VIL;
4.5 4.13 4.32 − 3.7 − V
−40 to +85 −40 to +125
amb
(1)
IO= −2.0 mA
V
OL
LOW-level output
voltage
VI=VIHor VIL;
IO=20µA
I=VIH
or VIL;
V
4.5 − 0 0.1 − 0.1 V
4.5 − 0.15 0.33 − 0.4 V
IO= 2.0 mA
I
I
∆I
LI
CC
CC
input leakage current VI=VCCor GND 5.5 −−1.0 − 1.0 µA
quiescent supply
current
additional supply
current per input
VI=VCCor GND;
IO=0
VI=VCC− 2.1 V;
IO=0
5.5 −−10.0 − 20.0 µA
4.5 to 5.5 −−500 − 850 µA
(°C)
UNIT
MAX. MIN. MAX.
(°C)
UNIT
MAX. MIN. MAX.
Note
1. All typical values are measured at T
amb
=25°C.
2002 May 15 6
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