Philips 74HC1G14, 74HCT1G14 User Manual

DATA SH EET

Product specification

Supersedes data of 2001 Mar 02

2002 May 15

INTEGRATED CIRCUITS

74HC1G14; 74HCT1G14

Inverting Schmitt-triggers

2002 May 15 2

Philips Semiconductors Product specification

Inverting Schmitt-triggers 74HC1G14; 74HCT1G14

FEATURES

• Wide operating voltage range from 2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Very small 5 pins package

• Applications

– Wave and pulse shapers

– Astable multivibrators

– Monostable multivibrators

• Output capability: standard.

DESCRIPTION

The 74HC1G/HCT1G14 is a high-speed Si-gate CMOS

device.

The 74HC1G/HCT1G14 provides the inverting buffer

function with Schmitt-trigger action. These devices are

capable oftransformingslowly changing input signals into

sharply defined, jitter-free output signals.

The standard output currents are

1

⁄

2

compared to the

74HC/HCT14.

QUICK REFERENCE DATA

GND = 0 V; T

amb

=25°C; t

r

=t

f

= 6.0 ns.

Notes

1. C

PD

is used to determine the dynamic power dissipation (P

D

in µW).

P

D

=C

PD

× V

CC

2

× f

i

+ ∑ (C

L

× V

CC

2

× f

o

) where:

f

i

= input frequency in MHz;

f

o

= output frequency in MHz;

C

L

= output load capacitance in pF;

V

CC

= supply voltage in Volts;

∑ (C

L

× V

CC

2

× f

o

) = sum of outputs.

2. For HC1G the condition is V

I

= GND to V

CC

.

For HCT1G the condition is V

I

= GND to V

CC

− 1.5 V.

FUNCTION TABLE

See note 1.

Note

1. H = HIGH voltage level;

L = LOW voltage level.

SYMBOL PARAMETER CONDITIONS

TYPICAL

UNIT

HC1G HCT1G

t

PHL

/t

PLH

propagation delay A to Y C

L

= 15 pF V

CC

= 5 V 10 15 ns

C

I

input capacitance 1.5 1.5 pF

C

PD

power dissipation capacitance notes 1 and 2 20 22 pF

INPUT OUTPUT

AY

LH

HL

2002 May 15 3

Philips Semiconductors Product specification

Inverting Schmitt-triggers 74HC1G14; 74HCT1G14

ORDERING AND PACKAGE INFORMATION

PINNING

OUTSIDE NORTH

AMERICA

PACKAGES

TEMPERATURE

RANGE

PINS PACKAGE MATERIAL CODE MARKING

74HC1G14GW −40 to +125 °C 5 SC-88A plastic SOT353 HF

74HCT1G14GW −40 to +125 °C 5 SC-88A plastic SOT353 TF

74HC1G14GV −40 to +125 °C 5 SC-74A plastic SOT753 H14

74HCT1G14GV −40 to +125 °C 5 SC-74A plastic SOT753 T14

PIN SYMBOL DESCRIPTION

1 n.c. not connected

2 A data input A

3 GND ground (0 V)

4 Y data output Y

5V

CC

supply voltage

Fig.1 Pin configuration.

handbook, halfpage

1

2

3

5

4

MNA022

14

V

CC

A

Y

GND

n.c

Fig.2 Logic symbol.

handbook, halfpage

MNA023

AY

2

4

Fig.3 IEC logic symbol.

handbook, halfpage

24

MNA024

Fig.4 Logic diagram.

handbook, halfpage

MNA025

A

Y

2002 May 15 4

Philips Semiconductors Product specification

Inverting Schmitt-triggers 74HC1G14; 74HCT1G14

RECOMMENDED OPERATING CONDITIONS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. Above 55 °C the value of P

D

derates linearly with 2.5 mW/K.

SYMBOL PARAMETER CONDITIONS

74HC1G 74HCT1G

UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

V

CC

supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V

V

I

input voltage 0 − V

CC

0 − V

CC

V

V

O

output voltage 0 − V

CC

0 − V

CC

V

T

amb

operating ambient

temperature

see DC and AC

characteristics per device

−40 +25 +125 −40 +25 +125 °C

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

supply voltage −0.5 +7.0 V

I

IK

input diode current V

I

<−0.5 V or V

I

> V

CC

+ 0.5 V; note 1 −±20 mA

I

OK

output diode current V

O

<−0.5 V or V

O

> V

CC

+ 0.5 V; note 1 −±20 mA

I

O

output source or sink current −0.5 V < V

O

< V

CC

+ 0.5 V; note 1 −±12.5 mA

I

CC

V

CC

or GND current note 1 −±25 mA

T

stg

storage temperature −65 +150 °C

P

D

power dissipation per package for temperature range from −40 to +125 °C;

note 2

− 200 mW

2002 May 15 5

Philips Semiconductors Product specification

Inverting Schmitt-triggers 74HC1G14; 74HCT1G14

DC CHARACTERISTICS

Family 74HC1G

At recommended operating conditions; voltages are referenced to GND (ground=0V).

Note

1. All typical values are measured at T

amb

=25°C.

SYMBOL PARAMETER

TEST CONDITIONS T

amb

(°C)

UNIT

OTHER V

CC

(V)

−40 to +85 −40 to +125

MIN. TYP.

(1)

MAX. MIN. MAX.

V

OH

HIGH-level output

voltage

V

I

=V

IH

or V

IL

;

I

O

= −20 µA

2.0 1.9 2.0 − 1.9 − V

V

I

=V

IH

or V

IL

;

I

O

= −20 µA

4.5 4.4 4.5 − 4.4 − V

V

I

=V

IH

or V

IL

;

I

O

= −20 µA

6.0 5.9 6.0 − 5.9 − V

V

I

=V

IH

or V

IL

;

I

O

= −2.0 mA

4.5 4.13 4.32 − 3.7 − V

V

I

=V

IH

or V

IL

;

I

O

= −2.6 mA

6.0 5.63 5.81 − 5.2 − V

V

OL

LOW-level output

voltage

V

I

=V

IH

or V

IL

;

I

O

=20µA

2.0 − 0 0.1 − 0.1 V

V

I

=V

IH

or V

IL

;

I

O

=20µA

4.5 − 0 0.1 − 0.1 V

V

I

=V

IH

or V

IL

;

I

O

=20µA

6.0 − 0 0.1 − 0.1 V

V

I

=V

IH

or V

IL

;

I

O

= 2.0 mA

4.5 − 0.15 0.33 − 0.4 V

V

I

=V

IH

or V

IL

;

I

O

= 2.6 mA

6.0 − 0.16 0.33 − 0.4 V

I

LI

input leakage current V

I

=V

CC

or GND 6.0 −− 1.0 − 1.0 µA

I

CC

quiescent supply

current

V

I

=V

CC

or GND;

I

O

=0

6.0 −− 10 − 20 µA

2002 May 15 6

Philips Semiconductors Product specification

Inverting Schmitt-triggers 74HC1G14; 74HCT1G14

Family 74HC1G14

At recommended operating conditions; voltages are referenced to GND (ground=0V).

Note

1. All typical values are measured at T

amb

=25°C.

Family 74HCT1G

At recommended operating conditions; voltages are referenced to GND (ground=0V).

Note

1. All typical values are measured at T

amb

=25°C.

SYMBOL PARAMETER

TEST CONDITIONS T

amb

(°C)

UNIT

WAVEFORMS V

CC

(V)

−40 to +85 −40 to +125

MIN. TYP.

(1)

MAX. MIN. MAX.

V

T+

positive-going threshold see Figs 5 and 6 2.0 0.7 1.09 1.5 0.7 1.5 V

4.5 1.7 2.36 3.15 1.7 3.15 V

6.0 2.1 3.12 4.2 2.1 4.2 V

V

T−

negative-going threshold see Figs 5 and 6 2.0 0.3 0.60 0.9 0.3 0.9 V

4.5 0.9 1.53 2.0 0.9 2.0 V

6.0 1.2 2.08 2.6 1.2 2.6 V

V

H

hysteresis (V

T+

− V

T−

) see Figs 5 and 6 2.0 0.2 0.48 1.0 0.2 1.0 V

4.5 0.4 0.83 1.4 0.4 1.4 V

6.0 0.6 1.04 1.6 0.6 1.6 V

SYMBOL PARAMETER

TEST CONDITIONS T

amb

(°C)

UNIT

OTHER V

CC

(V)

−40 to +85 −40 to +125

MIN. TYP.

(1)

MAX. MIN. MAX.

V

OH

HIGH-level output

voltage

V

I

=V

IH

or V

IL

;

I

O

= −20 µA

4.5 4.4 4.5 − 4.4 − V

V

I

=V

IH

or V

IL

;

I

O

= −2.0 mA

4.5 4.13 4.32 − 3.7 − V

V

OL

LOW-level output

voltage

V

I

=V

IH

or V

IL

;

I

O

=20µA

4.5 − 0 0.1 − 0.1 V

V

I

=V

IH

or V

IL

;

I

O

= 2.0 mA

4.5 − 0.15 0.33 − 0.4 V

I

LI

input leakage current V

I

=V

CC

or GND 5.5 −−1.0 − 1.0 µA

I

CC

quiescent supply

current

V

I

=V

CC

or GND;

I

O

=0

5.5 −−10.0 − 20.0 µA

∆I

CC

additional supply

current per input

V

I

=V

CC

− 2.1 V;

I

O

=0

4.5 to 5.5 −−500 − 850 µA