Philips 74HCT1G126GW, 74HC1G126GW Datasheet

INTEGRATED CIRCUITS

74HC1G126
74HCT1G126

Bus buffer/line driver; 3-state

Product specification
File under Integrated Circuits, IC06

1997 Nov 24

Philips Semiconductors Product specification

Bus buffer/line driver; 3-state

FEATURES

• Wide operating voltage :

2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Very small 5 pins package

• Output capability : bus driver

DESCRIPTION

The 74HC1G/HCT1G126 is a
highspeed Si-gate CMOS device.

The 74HC1G/HCT1G126 provides
one non-inverting buffer/line driver
with 3-state output. The 3-state output
is controlled by the output enable
input (OE). A LOW at OE causes the
output as assume a high impedance
OFF-state.

The bus driver output currents are
equal compared to the
74HC/HCT126.

QUICK REFERENCE DATA

GND = 0 V; T

SYMBOL PARAMETER CONDITIONS

t

PHL

C

C

Notes

1. CPDis used to determine the dynamic power dissipation (PDin µW).

2. For HC1G the condition is VI= GND to V

= 25 °C; tr= tf≤ 6.0 ns

amb

HC1G HCT1G

I

PD

propagation

/ t

PLH

delay
inA to outY
input

capacitance
power

dissipation

CL= 15 pF
VCC = 5 V

1.5 1.5 pF

notes 1 and 2

30 27 pF

capacitance

PD= CPD× V

2

× fi+ ∑ (CL× V

CC

2

× fo) where:

CC

fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in V;
∑ (CL× V

2

× fo) = sum of outputs.

CC

CC.

For HCT1G the condition is VI= GND to VCC − 1.5 V.

74HC1G126

74HCT1G126

TYPICAL

UNIT

9 10 ns

FUNCTION TABLE

INPUTS OUTPUT

OE inA outY

H L L
H H H

L X Z

H = HIGH voltage level
L = LOW voltage level
X = Don’t care
Z = High impedance OFF state

PIN DESCRIPTION

PIN NO. SYMBOL NAME AND FUNCTION

1, 2 OE, inA output enable input, data input
3 GND ground (0 V)
4 outY data output
5 V

CC

positive supply voltage

1997 Nov 24 2

Philips Semiconductors Product specification

Fig.1 Pin configuration.

1
2
3

inA

OE

GND

V

CC

outY

5

4

126

Fig.2 Logic symbol.

outY

4

inA

2

OE

1

Fig.3 IEC logic symbol.

1

2

4

OE

Fig.4 Logic diagram.

inA

outY

OE

Bus buffer/line driver; 3-state

74HC1G126

74HCT1G126

ORDERING AND PACKAGE INFORMATION

OUTSIDE

NORTH

AMERICA

74HC1G126GW
74HCT1G126GW 5 SC88A plastic SOT353 TN

NORTH

AMERICA

TEMPERATURE

RANGE

−40 °C to +125 °C

PINS PACKAGE MATERIAL CODE MARKING

5 SC88A plastic SOT353 HN

PACKAGES

1997 Nov 24 3

Philips Semiconductors Product specification

Bus buffer/line driver; 3-state

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER

V

CC

V

I

V

O

T

amb

DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient

temperature range −40 25 +125 −40 25 +125 °C

input rise and fall times

tr,t

f

except for
Schmitt-trigger inputs

ABSOLUTE MAXIMUM RATINGS

Limiting values is accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V)

74HC1G 74HCT1G

MIN. TYP. MAX. MIN. TYP. MAX.

CC
CC

0 − V
0 − V

CC
CC

− − 1000 − − −

− − 500 − − 500 VCC = 4.5 V

− − 400 − − − VCC = 6.0 V

74HC1G126

74HCT1G126

UNIT CONDIITIONS

V
V

see DC and AC
characteristics per
device

VCC = 2.0 V

ns

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

±I

IK

±I

OK

±I

O

±I

CC

T

stg

P

D

DC supply voltage −0.5 +7.0 V
DC input diode current VI< - 0.5 or VI> VCC + 0.5 V − 20 mA
DCoutput diode current VO< - 0.5 or VO> VCC + 0.5 V − 20 mA
DC output source or sink

current bus driver outputs
DC VCC or GND current for

types with bus driver outputs

− 0.5V < VO< VCC+ 0.5 V − 35.0 mA

− 70 mA

storage temperature range −65 +150 °C
power dissipation per package for temperature range: − 40 to + 125 °C

5 pins plastic SC88A above +55 °C derate linearly with 2.5 mW/K

− 200 mW

Notes

1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.

2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

1997 Nov 24 4