Philips 74HC1G126, 74HCT1G126 Technical data
INTEGRATED CIRCUITS
DATA SH EET
74HC1G126; 74HCT1G126
Bus buffer/line driver; 3-state
Product specification
Supersedes data of 2001 Apr 06
2002 May 15
Philips Semiconductors Product specification
Bus buffer/line driver; 3-state 74HC1G126; 74HCT1G126
FEATURES
• Wide operating voltage from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 5 pins package
• Output capability: bus driver.
DESCRIPTION
The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS
device.
The 74HC1G/HCT1G126 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A LOW at
pin OE causes the output as assume a high-impedance
OFF-state.
The bus driver output currents are equal compared to the
74HC/HCT126.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=rf≤6.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
PD
propagation delay A to Y CL= 15 pF; VCC= 5 V 9 10 ns
input capacitance 1.5 1.5 pF
power dissipation capacitance notes 1 and 2 30 27 pF
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+(CL×V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
= output load capacitance in pF;
C
L
VCC= supply voltage in Volts.
2. For HC1G the conditions is VI= GND to VCC.
For HCT1G the conditions is VI= GND to VCC− 1.5 V.
TYPICAL
UNIT
HC1G HCT1G
FUNCTION TABLE
See note 1.
INPUTS OUTPUT
OE A Y
HLL
HHH
LXZ
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
2002 May 15 2
Philips Semiconductors Product specification
Bus buffer/line driver; 3-state 74HC1G126; 74HCT1G126
ORDERING INFORMATION
PACKAGES
TYPE NUMBER
74HC1G126GW −40 to +125 °C 5 SC88A plastic SOT353 HN
74HCT1G126GW −40to+125°C 5 SC88A plastic SOT353 TN
74HC1G126GV −40to+125°C 5 SC-74A plastic SOT753 H26
74HCT1G126GV −40 to +125 °C 5 SC-74A plastic SOT753 T26
PIN DESCRIPTION
PIN SYMBOL NAME AND FUNCTION
1 OE output enable input
2 A data input A
3 GND ground (0 V)
4 Y data output Y
5V
TEMPERATURE
RANGE
CC
PINS PACKAGE MATERIAL CODE MARKING
supply voltage
handbook, halfpage
handbook, halfpage
OE
GND
1
A
2
126
3
MNA124
V
5
Y
4
Fig.1 Pin configuration.
2
1
OE
MNA126
4
CC
handbook, halfpage
handbook, halfpage
OE
A
2
OE
1
Fig.2 Logic symbol.
A
Y
MNA125
4
Y
MNA127
Fig.3 IEC logic symbol.
2002 May 15 3
Fig.4 Logic diagram.
Philips Semiconductors Product specification
Bus buffer/line driver; 3-state 74HC1G126; 74HCT1G126
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74HC1G 74HCT1G
V
CC
V
I
V
O
T
amb
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient
temperature
see DC and AC
characteristicsper
−40 +25 +125 −40 +25 +125 °C
0 − V
CC
0 − V
CC
CC
CC
V
V
device
t
r,tf
input rise and fall times VCC= 2.0 V −−1000 −−−ns
= 4.5 V −−500 −−500 ns
V
CC
V
= 6.0 V −−400 −−−ns
CC
LIMITING VALUES
In accordancewith the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
notes 1 and 2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
supply voltage −0.5 +7.0 V
input diode current VI< −0.5 V or VI>VCC+ 0.5 V −±20 mA
output diode current VO< −0.5 V or VO>VCC+ 0.5 V −±20 mA
output source or sink current −0.5V<VO<VCC+ 0.5 V −±35.0 mA
VCC or GND current −±70 mA
storage temperature −65 +150 °C
power dissipation per package for temperature range from −40 to +125 °C;
− 200 mW
note 3
Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
3. Above 55 °C the value of P
derates linearly with 2.5 mW/K.
D
2002 May 15 4
Philips Semiconductors Product specification
Bus buffer/line driver; 3-state 74HC1G126; 74HCT1G126
DC CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
V
IH
V
IL
V
OH
HIGH-level input voltage 2.0 1.5 1.2 − 1.5 − V
LOW-level input voltage 2.0 − 0.8 0.5 − 0.5 V
HIGH-level output
voltage
V
OL
I
LI
I
OZ
LOW-level output voltage VI=VIHor VIL;
input leakage current VI=VCC or GND 6.0 −−1.0 − 1.0 µA
3-state output current
OFF-state
I
CC
quiescent supply current VI=VCC or GND;
TEST CONDITIONS T
OTHER
V
(V)
CC
−40 to +85 −40 to +125
MIN. TYP.
4.5 3.15 2.4 − 3.15 − V
6.0 4.2 3.2 − 4.2 − V
4.5 − 2.1 1.35 − 1.35 V
6.0 − 2.8 1.8 − 1.8 V
VI=VIHor VIL;
2.0 1.9 2.0 − 1.9 − V
IO= −20 µA
V
I=VIH
or VIL;
4.5 4.4 4.5 − 4.4 − V
IO= −20 µA
V
I=VIH
or VIL;
6.0 5.9 6.0 − 5.9 − V
IO= −20 µA
V
I=VIH
or VIL;
4.5 3.84 4.32 − 3.7 − V
IO= −6.0 mA
V
I=VIH
or VIL;
6.0 5.34 5.81 − 5.2 − V
IO= −7.8 mA
2.0 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
4.5 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
6.0 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
4.5 − 0.15 0.33 − 0.4 V
IO= 6.0 mA
V
I=VIH
or VIL;
6.0 − 0.16 0.33 − 0.4 V
IO= 7.8 mA
VI=VIHor VIL;
6.0 −−5−10 µA
VO=VCC or GND
6.0 −−10 − 20 µA
IO=0
(°C)
amb
(1)
MAX. MIN. MAX.
UNIT
Note
1. All typical values are measured at T
amb
=25°C.
2002 May 15 5
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