Philips 74HC1G125GW Datasheet

INTEGRATED CIRCUITS

DATA SH EET

74HC1G125; 74HCT1G125

Bus buffer/line driver; 3-state

Product specification
File under Integrated Circuits, IC06

1998 Nov 10

Philips Semiconductors Product specification

Bus buffer/line driver; 3-state 74HC1G125; 74HCT1G125

FEATURES

• Wide operating voltage:

2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Very small 5 pins package

• Output capability: bus driver.

DESCRIPTION

The 74HC1G/HCT1G125 is a
high-speed Si-gate CMOS device.

The 74HC1G/HCT1G125 provides
one non-inverting buffer/line driver
with 3-state output. The 3-state output
is controlled by the output enable
input (

OE). A HIGH at OE causes the
output as assume a high-impedance
OFF-state.

The bus driver output currents are
equal compared to the
74HC/HCT125.

QUICK REFERENCE DATA

GND = 0 V; T

=25°C; tr=tf≤6.0 ns.

amb

SYMBOL PARAMETER CONDITIONS

t

PHL/tPLH

C

I

C

PD

propagation delay
inA to outY

input capacitance 1.5 1.5 pF
power dissipation

CL= 15 pF;
VCC=5V

notes 1 and 2 30 27 pF

capacitance

Notes

1. C

is used to determine the dynamic power dissipation (PDin µW).

PD

PD=CPD× V

2

× fi+ ∑ (CL× V

CC

2

× fo) where:

CC

fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in V;
∑ (CL× V

2. For HC1G the condition is VI= GND to V

2

× fo) = sum of outputs.

CC

CC.

For HCT1G the condition is VI= GND to VCC− 1.5 V.

PINNING

TYP.

UNIT

HC1G HCT1G

910ns

FUNCTION TABLE

See note 1.

INPUTS OUTPUT

OE inA outY

LL L
LH H

HX Z

Note

1. H = HIGH voltage level;

L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF state.

PIN SYMBOL DESCRIPTION

1 OE output enable input
2 inA data input
3 GND ground (0 V)
4 outY data output
5V

CC

DC supply voltage

1998 Nov 10 2

Philips Semiconductors Product specification

Bus buffer/line driver; 3-state 74HC1G125; 74HCT1G125

ORDERING INFORMATION

OUTSIDE NORTH

PACKAGES

AMERICA

TEMPERATURE

RANGE

PINS PACKAGE MATERIAL CODE MARKING

74HC1G125GW −40 to +125 °C 5 SC-88A plastic SOT353 HM
74HCT1G125GW 5 SC-88A plastic SOT353 TM

handbook, halfpage

OE
inA

GND

1
2

125

3

MNA117

V

5

CC

outY

4

handbook, halfpage

inA outY

2

1

OE

4

MNA118

handbook, halfpage

Fig.1 Pin configuration.

2
1

OE

MNA119

4

Fig.3 IEC logic symbol.

handbook, halfpage

Fig.2 Logic symbol.

inA

OE

Fig.4 Logic diagram.

outY

MNA120

1998 Nov 10 3

Philips Semiconductors Product specification

Bus buffer/line driver; 3-state 74HC1G125; 74HCT1G125

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER

UNIT CONDITIONS

MIN. TYP. MAX. MIN. TYP. MAX.

74HC1G04 74HCT1G04

V

CC

V

I

V

O

T

amb

DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient

−40 +25 +125 −40 +25 +125 °C see DC and AC

CC
CC

0 − V
0 − V

CC
CC

temperature

V
V

characteristics
per device

t

, t

r

f

input rise and fall times
except for Schmitt
trigger inputs

−−1000 −−−ns VCC= 2.0 V

−−500 −−500 ns V

−−400 −−−ns V

CC
CC

= 4.5 V
= 6.0 V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

±I

IK

±I

OK

±I

O

DC supply voltage −0.5 +7.0 V
DC input diode current VI< −0.5 V or VI>VCC+ 0.5 V; note 1 − 20 mA
DC output diode current VO< −0.5V or VO>VCC+ 0.5 V; note 1 − 20 mA
DC output source or sink

−0.5V < VO<VCC+ 0.5 V; note 1 − 12.5 mA

current standard outputs

±I

CC

DC VCC or GND current for

note 1 − 25 mA

types with standard outputs

T

stg

P

D

storage temperature −65 +150 °C
power dissipation per package temperature range: −40 to +125 °C; note 2 − 200 mW

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. Above 55 °C the value of P

derates linearly with 2.5 mW/K.

D

1998 Nov 10 4

Philips Semiconductors Product specification

Bus buffer/line driver; 3-state 74HC1G125; 74HCT1G125

DC CHARACTERISTICS
Family 74HC1G

Additional type data to the recommended operating conditions; voltages are referenced to GND (ground = 0 V).

T

SYMBOL PARAMETER

V

IH

HIGH-level input
voltage

V

IL

V

OH

LOW-level input voltage − 0.8 0.5 − 0.5 V 2.0

HIGH-level output
voltage; all outputs

V

OH

HIGH-level output
voltage; standard
outputs

V

OL

LOW-level output
voltage; all outputs

V

OL

LOW-level output
voltage; standard
outputs

I

I

I

CC

input leakage current −−1.0 − 1.0 µA 6.0 VI=VCCor GND
quiescent supply

current

(°C)

amb

−40 to +85 −40 to +125

MIN. TYP.

(1)

MAX. MIN. MAX.

UNIT

1.5 1.2 − 1.5 − V 2.0

3.15 2.4 − 3.15 − 4.5

4.2 3.2 − 4.2 − 6.0

− 2.1 1.35 − 1.35 4.5

− 2.8 1.8 − 1.8 6.0

1.9 2.0 − 1.9 − V 2.0 VI=VIHor VIL:

4.4 4.5 − 4.4 − 4.5

5.9 6.0 − 5.9 − 6.0

4.13 4.32 − 3.7 − V 4.5 VI=VIHor VIL;

5.63 5.81 − 5.2 − 6.0 V

− 0 0.1 − 0.1 V 2.0 VI=VIHor VIL;

− 0 0.1 − 0.1 4.5

− 0 0.1 − 0.1 6.0

− 0.15 0.33 − 0.4 V 4.5 VI=VIHor VIL;

− 0.16 0.33 − 0.4 6.0 V

−−10 − 20 µA 6.0 VI=VCCor GND;

TEST CONDITIONS

VCC (V) OTHER

−IO=20µA

−IO= 2.0 mA

or VIL;

I=VIH

−IO= 2.6 mA

IO=20µA

IO= 2.0 mA

or VIL;

I=VIH

IO= 2.6 mA

IO=0

Note

1. All typical values are measured at T

amb

=25°C.

1998 Nov 10 5