Philips 74HC1G08, 74HCT1G08 Technical data
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INTEGRATED CIRCUITS
DATA SH EET
74HC1G08; 74HCT1G08
2-input AND gate
Product specification
Supersedes data of 2001 Mar 02
2002 May 17
Philips Semiconductors Product specification
2-input AND gate 74HC1G08; 74HCT1G08
FEATURES
• Wide supply voltage range from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
DESCRIPTION
The 74HC1G/HCT1G08 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G08 provides the 2-input AND
function. Thestandard output currents are1⁄2compared to
the 74HC/HCT08.
• Balanced propagation delays
• Very small 5 pins package
• Output capability: standard.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤6.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
PD
propagation delay A and B to Y CL= 15 pF; VCC= 5 V 7 11 ns
input capacitance 1.5 1.5 pF
power dissipation capacitance notes 1 and 2 19 21 pF
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
= output load capacitance in pF;
C
L
VCC= supply voltage in Volts;
∑ (CL× V
2
× fo) = sum of outputs.
CC
2. For HC1G the condition is VI= GND to VCC.
For HCT1G the condition is VI= GND to VCC− 1.5 V.
TYPICAL
UNIT
HC1G HCT1G
FUNCTION TABLE
See note 1.
INPUTS OUTPUT
ABY
LLL
LHL
HLL
HHH
Note
1. H = HIGH voltage level;
L = LOW voltage level.
2002 May 17 2
Philips Semiconductors Product specification
2-input AND gate 74HC1G08; 74HCT1G08
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
74HC1G08GW −40 to +125 °C 5 SC-88A plastic SOT353 HE
74HCT1G08GW −40 to +125 °C 5 SC-88A plastic SOT353 TE
74HC1G08GV −40 to +125 °C 5 SC-74A plastic SOT753 H08
74HCT1G08GV −40 to +125 °C 5 SC-74A plastic SOT753 T08
PINNING
PIN SYMBOL DESCRIPTION
1 B data input B
2 A data input A
3 GND ground (0 V)
4 Y data output Y
5V
TEMPERATURE
RANGE
CC
PINS PACKAGE MATERIAL CODE MARKING
supply voltage
handbook, halfpage
handbook, halfpage
GND
B
1
A
2
08
3
MNA112
V
5
Y
4
Fig.1 Pin configuration.
1
2
&
MNA114
4
CC
handbook, halfpage
handbook, halfpage
B
A
1
B
2
A
MNA113
Fig.2 Logic symbol.
4
Y
Y
MNA115
Fig.3 IEC logic symbol.
2002 May 17 3
Fig.4 Logic diagram.
Philips Semiconductors Product specification
2-input AND gate 74HC1G08; 74HCT1G08
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74HC1G04 74HCT1G04
V
CC
V
I
V
O
T
amb
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient
temperature
see DC and AC
characteristics per
−40 +25 +125 −40 +25 +125 °C
0 − V
CC
0 − V
CC
CC
CC
V
V
device
t
r,tf
input rise and fall times VCC= 2.0 V −−1000 −−−ns
= 4.5 V −−500 −−500 ns
V
CC
V
= 6.0 V −−400 −−−ns
CC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134);voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
supply voltage −0.5 +7.0 V
input diode current VI< −0.5 Vor VI>VCC+ 0.5 V; note 1 −±20 mA
output diode current VO< −0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA
output source or sink current −0.5V<VO<VCC+ 0.5 V; note 1 −±12.5 mA
VCC or GND current note 1 −±25 mA
storage temperature −65 +150 °C
power dissipation per package for temperature range from −40 to +125 °C;
− 200 mW
note 2
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55 °C the value of P
derates linearly with 2.5 mW/K.
D
2002 May 17 4
Philips Semiconductors Product specification
2-input AND gate 74HC1G08; 74HCT1G08
DC CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
V
IH
V
IL
V
OH
HIGH-levelinput voltage 2.0 1.5 1.2 − 1.5 − V
LOW-level input voltage 2.0 − 0.8 0.5 − 0.5 V
HIGH-level output
voltage
V
OL
LOW-level output
voltage
I
LI
I
CC
input leakage current VI=VCCor GND 6.0 −−1.0 − 1.0 µA
quiescent supply
current
TEST CONDITIONS T
−40 to +85 −40 to +125
OTHER VCC (V)
MIN. TYP.
4.5 3.15 2.4 − 3.15 − V
6.0 4.2 3.2 − 4.2 − V
4.5 − 2.1 1.35 − 1.35 V
6.0 − 2.8 1.8 − 1.8 V
VI=VIHor VIL;
2.0 1.9 2.0 − 1.9 − V
IO= −20 µA
V
I=VIH
or VIL;
4.5 4.4 4.5 − 4.4 − V
IO= −20 µA
V
I=VIH
or VIL;
6.0 5.9 6.0 − 5.9 − V
IO= −20 µA
V
I=VIH
or VIL;
4.5 4.13 4.32 − 3.7 − V
IO= −2.0 mA
V
I=VIH
or VIL;
6.0 5.63 5.81 − 5.2 − V
IO= −2.6 mA
VI=VIHor VIL;
2.0 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
4.5 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
6.0 − 0 0.1 − 0.1 V
IO=20µA
V
I=VIH
or VIL;
4.5 − 0.15 0.33 − 0.4 V
IO= 2.0 mA
V
I=VIH
or VIL;
6.0 − 0.16 0.33 − 0.4 V
IO= 2.6 mA
VI=VCCor GND;
6.0 −−10 − 20 µA
IO=0
(°C)
amb
(1)
MAX. MIN. MAX.
UNIT
Note
1. All typical values are measured at T
amb
=25°C.
2002 May 17 5
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