Philips 74HCT1G00GW, 74HC1G00GW Datasheet

INTEGRATED CIRCUITS

DATA SH EET

74HC1G00; 74HCT1G00

2-input NAND gate

Product specification
File under Integrated Circuits, IC06

1998 Jul 30

Philips Semiconductors Product specification

2-input NAND gate

FEATURES

• Wide operating voltage:

2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Very small 5 pins package

• Output capability: standard.

DESCRIPTION

The 74HC1G/HCT1G00 is a high
speed Si-gate CMOS device.

The 74HC1G/HCT1G00 provides the
2-input NAND function. The standard
output currents are
the 74HC/HCT00.

FUNCTION TABLE

See note 1.

INPUTS OUTPUT

inA inB outY

LL H

LH H
HL H
HH L

Note

1. H = HIGH voltage level;
L = LOW voltage level.

1

⁄2 compared to

QUICK REFERENCE DATA

GND = 0 V; T

=25°C; tr=tf≤6.0 ns

amb

SYMBOL PARAMETER CONDITIONS

t

PHL/tPLH

propagation
delay

CL=15pF;
VCC=5V

inA, inB to outY

C

I

input
capacitance

C

PD

power

notes 1 and 2 19 21 pF
dissipation
capacitance

Notes

1. C

is used to determine the dynamic power dissipation (PDin µW).

PD

PD=CPD× V

2

× fi+ ∑ (CL× V

CC

2

× fo) where:

CC

fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in V;
∑ (CL× V

2. For HC1G the condition is VI= GND to V

2

× fo) = sum of outputs.

CC

CC.

For HCT1G the condition is VI= GND to VCC− 1.5 V.

PINNING

PIN SYMBOL DESCRIPTION

1 inB data input B
2 inA data input A
3 GND ground (0 V)
4 outY data output
5V

CC

DC supply voltage

74HC1G00;

74HCT1G00

TYPICAL

UNIT

HC1G HCT1G

710ns

1.5 1.5 pF

1998 Jul 30 2

Philips Semiconductors Product specification

2-input NAND gate 74HC1G00; 74HCT1G00

ORDERING INFORMATION

PACKAGES

OUTSIDE NORTH AMERICA

74HC1G00GW
74HCT1G00GW 5 SC-88A plastic SOT353 TA

TEMPERATURE

RANGE

−40 to +125 °C

PINS PACKAGE MATERIAL CODE MARKING

5 SC-88A plastic SOT353 HA

handbook, halfpage

handbook, halfpage

inB
inA

GND

1
2
3

5

00

4

MNA096

Fig.1 Pin configuration.

1
2

&

MNA098

V

CC

outY

handbook, halfpage

1

inB

2

inA

outY

MNA097

4

Fig.2 Logic symbol.

handbook, halfpage

4

inB

inA

outY

MNA099

Fig.3 IEC logic symbol.

1998 Jul 30 3

Fig.4 Logic diagram.

Philips Semiconductors Product specification

2-input NAND gate 74HC1G00; 74HCT1G00

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER

UNIT CONDITIONS

MIN. TYP. MAX. MIN. TYP. MAX.

74HC1G 74HCT1G

V

CC

V

I

V

O

T

amb

DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient

−40 +25 +125 −40 +25 +125 °C see DC and AC

0 − V

CC

0 − V

CC

CC
CC

temperature range

V
V

characteristics per
device

t

, t

r

f

input rise and fall times
except for
Schmitt-trigger inputs

−−1000 −−− ns VCC= 2.0 V

−−500 −−500 V

−−400 −−− V

CC
CC

= 4.5 V
= 6.0 V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V);
see note 1 and 2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

±I

IK

±I

OK

±I

O

±I

CC

DC supply voltage −0.5 +7.0 V
DC input diode current VI<−0.5 or VI> VCC+ 0.5 V − 20 mA
DC output diode current VO<−0.5 or VO> VCC+ 0.5 V − 20 mA
DC output source or sink

current standard outputs
DC VCC or GND current for

−0.5 V < VO< VCC+ 0.5 V

− 12.5 mA

− 25 mA

types with standard outputs

T

stg

P

D

storage temperature range −65 +150 °C
power dissipation per

package 5 pins plastic SC-88A

for temperature range: −40 to +125 °C;
above +55 °C derate linearly with 2.5 mW/K

− 200 mW

Notes

1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.

2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

1998 Jul 30 4