Philips 74HC14, 74HCT14 DATA SHEET

INTEGRATED CIRCUITS

DATA SH EET

74HC14; 74HCT14

Hex inverting Schmitt trigger

Product speciﬁcation Supersedes data of 1997 Aug 26

2003 Oct 30

Philips Semiconductors Product speciﬁcation

Hex inverting Schmitt trigger 74HC14; 74HCT14

FEATURES

• Applications: – Wave and pulse shapers – Astable multivibrators – Monostable multivibrators.

• Complies with JEDEC standard no. 7A

• ESD protection:

HBM EIA/JESD22-A114-A exceeds 2000 V

DESCRIPTION

The74HC14and74HCT14arehigh-speedSi-gateCMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A.

The 74HC14 and 74HCT14 provide six inverting buffers with Schmitt-trigger action. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.

MM EIA/JESD22-A115-A exceeds 200 V.

• Specified from −40 to +85 °C and −40 to +125 °C.

QUICK REFERENCE DATA

GND = 0 V; T

=25°C; tr= tf= 6 ns

amb

SYMBOL PARAMETER CONDITIONS

t

PHL/tPLH

C

I

C

PD

propagation delay nA to nY CL= 15 pF; VCC=5V1217ns input capacitance 3.5 3.5 pF power dissipation capacitance per gate notes 1 and 2 7 8 pF

Notes

1. C

is used to determine the dynamic power dissipation (PDin µW):

PD

PD=CPD× V

2

× fi× N+Σ(CL× V

CC

2

× fo) where:

CC

fi= input frequency in MHz; fo= output frequency in MHz;

= output load capacitance in pF;

C

L

VCC= supply voltage in Volts; N = total load switching outputs; Σ(CL× V

2

× fo) = sum of the outputs.

CC

2. For type 74HC14 the condition is VI= GND to VCC.

For type 74HCT14 the condition is VI= GND to VCC− 1.5 V.

TYPICAL

UNIT

HC HCT

2003 Oct 30 2

Philips Semiconductors Product speciﬁcation

Hex inverting Schmitt trigger 74HC14; 74HCT14

FUNCTION TABLE

INPUT OUTPUT

nA nY

LH

HL

Note

1. H = HIGH voltage level;

L = LOW voltage level.

ORDERING INFORMATION

TYPE NUMBER

74HC14D −40 to +125 °C 14 SO14 plastic SOT108-1 74HCT14D −40 to +125 °C 14 SO14 plastic SOT108-1 74HC14DB −40 to +125 °C 14 SSOP14 plastic SOT337-1 74HCT14DB −40 to +125 °C 14 SSOP14 plastic SOT337-1 74HC14N −40 to +125 °C 14 DIP14 plastic SOT27-1 74HCT14N −40 to +125 °C 14 DIP14 plastic SOT27-1 74HC14PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1 74HCT14PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1 74HC14BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-1 74HCT14BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-1

PINNING

PIN SYMBOL DESCRIPTION

1 1A data input 2 1Y data output 3 2A data input 4 2Y data output 5 3A data input 6 3Y data output 7 GND ground (0 V) 8 4Y data output

9 4A data input 10 5Y data output 11 5A data input 12 6Y data output 13 6A data input 14 V

TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE

CC

supply voltage

PACKAGE

2003 Oct 30 3

Philips Semiconductors Product speciﬁcation

Hex inverting Schmitt trigger 74HC14; 74HCT14

V

handbook, halfpage

1A 1Y 2A 2Y 3A 3Y

GND

handbook, halfpage

1 2 3 4

14

5 6 7

MNA839

V

14

CC

2

13

6A

12

6Y

11

5A

10

5Y

9

4A

8

4Y

1Y

2A

2Y

3A

3Y

3

4

5

6

Top view

1A

CC

114

(1)

GND

8

7

GND

4Y

13

12

11

10

9

MBL760

6A

6Y

5A

5Y

4A

handbook, halfpage

Fig.1 Pin configuration.

1

3

5

9

11

13

1A 1Y

2A 2Y

3A 3Y

4A 4Y

5A 5Y

6A 6Y

MNA840

2

4

6

8

10

12

(1) The die substrate is attached to this pad using conductive die

attach material. It can not be used as a supply pin or input.

Fig.2 Pin configuration DHVQFN14.

handbook, halfpage

1

3

5

9

11

13

MNA841

2

4

6

8

10

12

Fig.3 Logic symbol.

2003 Oct 30 4

Fig.4 IEC logic symbol.

Philips Semiconductors Product speciﬁcation

Hex inverting Schmitt trigger 74HC14; 74HCT14

handbook, halfpage

1

3

5

9

11

13

1A 1Y

2A 2Y

3A 3Y

4A 4Y

5A 5Y

6A 6Y

MNA842

2

4

6

8

10

12

Fig.5 Functional diagram.

handbook, halfpage

A

Fig.6 Logic diagram (one Schmitt trigger).

Y

MNA843

2003 Oct 30 5

Philips Semiconductors Product speciﬁcation

Hex inverting Schmitt trigger 74HC14; 74HCT14

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER CONDITIONS

UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

74HC14 74HCT14

V

CC

V

I

V

O

T

amb

supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V input voltage 0 − V output voltage 0 − V operating ambient

temperature

see DC and AC characteristics

−40 +25 +85 −40 +25 +85 °C

−40 − +125 −40 − +125 °C

0 − V

CC

0 − V

CC

CC CC

V V

per device

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134); voltages are referenced to GND (ground = 0 V).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

I

IK

I

OK

I

O

supply voltage −0.5 +7 V input diode current VI< −0.5 V or VI>VCC+ 0.5 V −±20 mA output diode current VO< −0.5 V or VO>VCC+ 0.5 V −±20 mA output source or sink

−0.5V<VO<VCC+ 0.5 V −±25 mA

current

I

CC;IGNDVCC

T

stg

P

tot

or GND current − 50 mA storage temperature −65 +150 °C power dissipation T

= −40 to +125 °C

amb

DIP14 packages; note 1 − 750 mW Other packages; note 2 − 500 mW

Notes

1. For DIP14 packages: above 70 °C the value of PD derates linearly with 12 mW/K.

2. For SO14 packages: above 70 °C the value of PD derates linearly with 8 mW/K. For (T)SSOP14 packages: above 60 °C the value of PD derates linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C the value of PD derates linearly with 4.5 mW/K.

2003 Oct 30 6

Philips Semiconductors Product speciﬁcation

Hex inverting Schmitt trigger 74HC14; 74HCT14

DC CHARACTERISTICS Type 74HC14

At recommended operating conditions; voltages are referenced to GND (ground=0V).

SYMBOL PARAMETER

T

=25°C

amb

V

OH

HIGH-level output voltage

V

OL

LOW-level output voltage

I

LI

input leakage current

I

CC

quiescent supply current

T

= −40 to +85 °C

amb

V

OH

HIGH-level output voltage

V

OL

LOW-level output voltage

I

LI

input leakage current

I

CC

quiescent supply current

TEST CONDITIONS

MIN. TYP.

(1)

MAX. UNIT

OTHER VCC (V)

VI=VIHor V

IL

IO= −20 µA 2.0 1.9 2.0 − V

= −20 µA 4.5 4.4 4.5 − V

I

O

I

= −20 µA 6.0 5.9 6.0 − V

O

I

= −4.0 mA 4.5 3.98 4.32 − V

O

I

= −5.2 mA 6.0 5.48 5.81 − V

O

VI=VIHor V

IL

IO=20µA 2.0 − 0 0.1 V I

=20µA 4.5 − 0 0.1 V

O

I

=20µA 6.0 − 0 0.1 V

O

I

= 4.0 mA 4.5 − 0.15 0.26 V

O

I

= 5.2 mA 6.0 − 0.16 0.26 V

O

VI=VCCor GND 6.0 −−0.1 µA

VI=VCCor GND; IO= 0 6.0 −−2.0 µA

VI=VIHor V

IL

IO= −20 µA 2.0 1.9 −−V I

=−20 µA 4.5 4.4 −−V

O

=−20 µA 6.0 5.9 −−V

I

O

I

=−4.0 mA 4.5 3.84 −−V

O

I

=−5.2 mA 6.0 5.34 −−V

O

VI=VIHor V

IL

IO=20µA 2.0 −−0.1 V I

=20µA 4.5 −−0.1 V

O

I

=20µA 6.0 −−0.1 V

O

I

= 4.0 mA 4.5 −−0.33 V

O

I

= 5.2 mA 6.0 −−0.33 V

O

VI=VCCor GND 6.0 −−1.0 µA

VI=VCCor GND; IO= 0 6.0 −−20 µA

2003 Oct 30 7