74HC04
INTEGRATED CIRCUITS
DATA SHEET
74HC04; 74HCT04
Hex inverter
Product specification |
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2003 Jul 23 |
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Supersedes data of 1993 Sep 01 |
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Philips Semiconductors |
Product specification |
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Hex inverter |
74HC04; 74HCT04 |
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FEATURES
∙Complies with JEDEC standard no. 8-1A
∙ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.
∙Specified from −40 to +85 °C and −40 to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
DESCRIPTION
The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers.
SYMBOL |
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PARAMETER |
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CONDITIONS |
TYPICAL |
UNIT |
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HC04 |
HCT04 |
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tPHL/tPLH |
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propagation delay nA to nY |
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CL = 15 pF; VCC = 5 V |
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8 |
ns |
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CI |
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input capacitance |
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3.5 |
3.5 |
pF |
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CPD |
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power dissipation capacitance per gate |
notes 1 and 2 |
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24 |
pF |
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Notes |
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1. CPD is used to determine the dynamic power dissipation (PD in μW). |
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P = C |
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× V |
2 |
× f |
× N + Σ(C |
× V |
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× f |
) where: |
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D |
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PD |
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CC |
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CC |
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fi = input frequency in MHz; |
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fo = output frequency in MHz; |
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CL = output load capacitance in pF; |
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VCC = supply voltage in Volts; |
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N = total load switching outputs; |
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Σ(C |
L |
× V |
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× f |
) = sum of the outputs. |
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CC |
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o |
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2. For 74HC04: the condition is VI = GND to VCC. |
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For 74HCT04: the condition is VI = GND to VCC − 1.5 V. |
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FUNCTION TABLE |
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See note 1. |
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INPUT |
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OUTPUT |
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nA |
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nY |
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L |
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H |
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H |
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L |
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Note
1. H = HIGH voltage level; L = LOW voltage level.
2003 Jul 23 |
2 |
Philips Semiconductors |
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Product specification |
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Hex inverter |
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74HC04; 74HCT04 |
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ORDERING INFORMATION |
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TYPE NUMBER |
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PACKAGE |
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TEMPERATURE RANGE |
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PINS |
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PACKAGE |
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MATERIAL |
CODE |
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74HC04N |
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−40 to +125 °C |
14 |
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DIP14 |
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plastic |
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SOT27-1 |
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74HCT04N |
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−40 to +125 °C |
14 |
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DIP14 |
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plastic |
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SOT27-1 |
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74HC04D |
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−40 to +125 °C |
14 |
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SO14 |
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plastic |
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SOT108-1 |
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74HCT04D |
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−40 to +125 °C |
14 |
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SO14 |
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plastic |
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SOT108-1 |
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74HC04DB |
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−40 to +125 °C |
14 |
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SSOP14 |
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plastic |
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SOT337-1 |
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74HCT04DB |
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−40 to +125 °C |
14 |
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SSOP14 |
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plastic |
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SOT337-1 |
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74HC04PW |
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−40 to +125 °C |
14 |
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TSSOP14 |
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plastic |
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SOT402-1 |
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74HCT04PW |
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−40 to +125 °C |
14 |
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TSSOP14 |
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plastic |
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SOT402-1 |
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74HC04BQ |
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−40 to +125 °C |
14 |
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DHVQFN14 |
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plastic |
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SOT762-1 |
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74HCT04BQ |
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−40 to +125 °C |
14 |
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DHVQFN14 |
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plastic |
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SOT762-1 |
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PINNING |
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PIN |
SYMBOL |
DESCRIPTION |
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1 |
1A |
data input |
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2 |
1Y |
data output |
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handbook, halfpage |
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3 |
2A |
data input |
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1A |
1 |
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14 |
VCC |
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4 |
2Y |
data output |
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1Y |
2 |
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13 |
6A |
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5 |
3A |
data input |
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2A |
3 |
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12 |
6Y |
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6 |
3Y |
data output |
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2Y |
4 |
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04 |
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11 |
5A |
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7 |
GND |
ground (0 V) |
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3A |
5 |
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10 |
5Y |
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8 |
4Y |
data output |
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3Y |
6 |
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9 |
4A |
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9 |
4A |
data input |
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8 |
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GND |
7 |
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4Y |
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10 |
5Y |
data output |
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11 |
5A |
data input |
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MNA340 |
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12 |
6Y |
data output |
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13 |
6A |
data input |
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Fig.1 |
Pin configuration DIP14, SO14 and |
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14 |
VCC |
supply voltage |
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(T)SSOP14. |
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2003 Jul 23 |
3 |
Philips Semiconductors |
Product specification |
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Hex inverter |
74HC04; 74HCT04 |
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handbook, halfpage |
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1A |
VCC |
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1 |
14 |
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1Y |
2 |
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13 |
6A |
2A |
3 |
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12 |
6Y |
2Y |
4 |
GND(1) |
11 |
5A |
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3A |
5 |
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10 |
5Y |
3Y |
6 |
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9 |
4A |
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7 |
8 |
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Top view |
GND |
4Y |
MBL760 |
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(1)The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input.
Fig.2 Pin configuration DHVQFN14.
1 |
1A |
1Y |
2 |
3 |
2A |
2Y |
4 |
5 |
3A |
3Y |
6 |
9 |
4A |
4Y |
8 |
11 |
5A |
5Y |
10 |
13 |
6A |
6Y |
12 |
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MNA342 |
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Fig.3 Logic symbol.
1 |
1 |
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2 |
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3 |
1 |
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4 |
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5 |
1 |
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6 |
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handbook, halfpage |
Y |
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A |
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9 |
1 |
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8 |
MNA341 |
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11 |
1 |
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10 |
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13 |
1 |
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12 |
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MNA343 |
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Fig.4 IEC logic symbol. |
Fig.5 Logic diagram (one inverter). |
2003 Jul 23 |
4 |
Philips Semiconductors |
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Product specification |
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Hex inverter |
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74HC04; 74HCT04 |
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RECOMMENDED OPERATING CONDITIONS |
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SYMBOL |
PARAMETER |
CONDITIONS |
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74HC04 |
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74HCT04 |
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UNIT |
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MIN. |
TYP. |
MAX. |
MIN. |
TYP. |
MAX. |
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VCC |
supply voltage |
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2.0 |
5.0 |
6.0 |
4.5 |
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5.0 |
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5.5 |
V |
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VI |
input voltage |
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0 |
− |
VCC |
0 |
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VCC |
V |
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VO |
output voltage |
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0 |
− |
VCC |
0 |
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VCC |
V |
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Tamb |
ambient temperature |
see DC and AC |
−40 |
+25 |
+125 |
−40 |
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+25 |
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+125 |
°C |
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characteristics per |
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device |
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tr, tf |
input rise and fall times |
VCC = 2.0 V |
− |
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1000 |
− |
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− |
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− |
ns |
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VCC = 4.5 V |
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6.0 |
500 |
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6.0 |
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500 |
ns |
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VCC = 6.0 V |
− |
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400 |
− |
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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCC |
supply voltage |
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−0.5 |
+7.0 |
V |
IIK |
input diode current |
VI < −0.5 V or VI > VCC + 0.5 V |
− |
±20 |
mA |
IOK |
output diode current |
VO < −0.5 V or VO > VCC + 0.5 V |
− |
±20 |
mA |
IO |
output source or sink |
−0.5 V < VO < VCC + 0.5 V |
− |
±25 |
mA |
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current |
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ICC, IGND |
VCC or GND current |
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− |
±50 |
mA |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Ptot |
power dissipation |
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DIP14 package |
Tamb = −40 to +125 °C; note 1 |
− |
750 |
mW |
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other packages |
Tamb = −40 to +125 °C; note 2 |
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500 |
mW |
Notes
1.For DIP14 packages: above 70 °C derate linearly with 12 mW/K.
2.For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
2003 Jul 23 |
5 |
Philips Semiconductors |
Product specification |
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Hex inverter |
74HC04; 74HCT04 |
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DC CHARACTERISTICS
Type 74HC04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL |
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PARAMETER |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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OTHER |
VCC (V) |
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Tamb = 25 °C |
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VIH |
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HIGH-level input voltage |
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2.0 |
1.5 |
1.2 |
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V |
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4.5 |
3.15 |
2.4 |
− |
V |
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6.0 |
4.2 |
3.2 |
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V |
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VIL |
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LOW-level input voltage |
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2.0 |
− |
0.8 |
0.5 |
V |
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4.5 |
− |
2.1 |
1.35 |
V |
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6.0 |
− |
2.8 |
1.8 |
V |
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VOH |
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HIGH-level output voltage |
VI = VIH or VIL |
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IO = −20 μA |
2.0 |
1.9 |
2.0 |
− |
V |
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IO = −20 μA |
4.5 |
4.4 |
4.5 |
− |
V |
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IO = −4.0 mA |
4.5 |
3.98 |
4.32 |
− |
V |
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IO = −20 μA |
6.0 |
5.9 |
6.0 |
− |
V |
|
|
|
IO = −5.2 mA |
6.0 |
5.48 |
5.81 |
− |
V |
VOL |
|
LOW-level output voltage |
VI = VIH or VIL |
|
|
|
|
|
|
|
|
IO = 20 μA |
2.0 |
− |
0 |
0.1 |
V |
|
|
|
IO = 20 μA |
4.5 |
− |
0 |
0.1 |
V |
|
|
|
IO = 4.0 mA |
4.5 |
− |
0.15 |
0.26 |
V |
|
|
|
IO = 20 μA |
6.0 |
− |
0 |
0.1 |
V |
|
|
|
IO = 5.2 mA |
6.0 |
− |
0.16 |
0.26 |
V |
ILI |
|
input leakage current |
VI = VCC or GND |
6.0 |
− |
0.1 |
±0.1 |
μA |
IOZ |
|
3-state output OFF current |
VI = VIH or VIL; |
6.0 |
− |
− |
±.0.5 |
μA |
|
|
|
VO = VCC or GND |
|
|
|
|
|
ICC |
|
quiescent supply current |
VI = VCC or GND; IO = 0 |
6.0 |
− |
− |
2 |
μA |
2003 Jul 23 |
6 |