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74HC04
Datasheet (Philips)
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Datasheet 74HC04, 74HCT04 Datasheet (Philips)

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查询74HC04供应商
INTEGRATED CIRCUITS
DATA SH EET
74HC04; 74HCT04
Hex inverter
Product specification Supersedes data of 1993 Sep 01
2003 Jul 23
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
FEATURES
• Complies with JEDEC standard no. 8-1A
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.
• Specified from −40 to +85 °C and −40 to +125 °C.
DESCRIPTION
The 74HC/HCT04 are high-speed Si-gateCMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤6.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
PD
propagation delay nA to nY CL= 15 pF; VCC=5V78ns input capacitance 3.5 3.5 pF power dissipation capacitance per gate notes 1 and 2 21 24 pF
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi× N+Σ(CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz; fo= output frequency in MHz;
= output load capacitance in pF;
C
L
VCC= supply voltage in Volts; N = total load switching outputs; Σ(CL× V
2
× fo) = sum of the outputs.
CC
2. For 74HC04: the condition is VI= GND to VCC. For 74HCT04: the condition is VI= GND to VCC− 1.5 V.
TYPICAL
UNIT
HC04 HCT04
FUNCTION TABLE
See note 1.
INPUT OUTPUT
nA nY
LH
HL
Note
1. H = HIGH voltage level; L = LOW voltage level.
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE
74HC04N −40 to +125 °C 14 DIP14 plastic SOT27-1 74HCT04N −40 to +125 °C 14 DIP14 plastic SOT27-1 74HC04D −40 to +125 °C 14 SO14 plastic SOT108-1 74HCT04D −40 to +125 °C 14 SO14 plastic SOT108-1 74HC04DB −40 to +125 °C 14 SSOP14 plastic SOT337-1 74HCT04DB −40 to +125 °C 14 SSOP14 plastic SOT337-1 74HC04PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1 74HCT04PW −40 to +125 °C 14 TSSOP14 plastic SOT402-1 74HC04BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-1 74HCT04BQ −40 to +125 °C 14 DHVQFN14 plastic SOT762-1
PINNING
PIN SYMBOL DESCRIPTION
1 1A data input 2 1Y data output 3 2A data input 4 2Y data output 5 3A data input 6 3Y data output 7 GND ground (0 V) 8 4Y data output
9 4A data input 10 5Y data output 11 5A data input
handbook, halfpage
1A 1Y 2A 2Y 3A 3Y
GND
1 2 3 4
04
5 6 7
MNA340
V
14
CC
13
6A
12
6Y
11
5A
10
5Y
9
4A
8
4Y
12 6Y data output 13 6A data input 14 V
CC
supply voltage
Fig.1 Pin configuration DIP14, SO14 and
(T)SSOP14.
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
V
handbook, halfpage
1Y
2A
2Y
3A
3Y
2
3
4
5
6
Top view
1A
CC
114
(1)
GND
8
7
GND
4Y
13
12
11
10
9
MBL760
6A
6Y
5A
5Y
4A
handbook, halfpage
1Y
2Y
3Y
4Y
5Y
6Y
2
4
6
8
10
12
1A
1
2A
3
3A
5
4A
9
5A
11
6A
13
(1) The die substrate is attached to this pad using conductive die
attach material. It can not be used as a supply pin or input.
Fig.2 Pin configuration DHVQFN14.
handbook, halfpage
1
3
5
9
11
1
1
1
1
1
2
4
6
8
10
handbook, halfpage
MNA342
Fig.3 Logic symbol.
A
Y
MNA341
13
1
MNA343
12
Fig.4 IEC logic symbol. Fig.5 Logic diagram (one inverter).
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74HC04 74HCT04
V
CC
V
I
V
O
T
amb
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V input voltage 0 − V output voltage 0 − V ambient temperature see DC and AC
−40 +25 +125 −40 +25 +125 °C
0 − V
CC
0 − V
CC
CC CC
V V
characteristicsper device
t
, t
r
f
input rise and fall times VCC= 2.0 V −−1000 −−−ns
= 4.5 V − 6.0 500 − 6.0 500 ns
V
CC
V
= 6.0 V −−400 −−−ns
CC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
I
IK
I
OK
I
O
supply voltage −0.5 +7.0 V input diode current VI< −0.5 V or VI>VCC+ 0.5 V −±20 mA output diode current VO< −0.5 V or VO>VCC+ 0.5 V −±20 mA output source or sink
−0.5V<VO<VCC+ 0.5 V −±25 mA
current
I
, I
CC
T
stg
P
tot
GNDVCC
or GND current −±50 mA storage temperature −65 +150 °C power dissipation
DIP14 package T other packages T
= −40 to +125 °C; note 1 − 750 mW
amb
= −40 to +125 °C; note 2 − 500 mW
amb
Notes
1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K.
2. For SO14 packages: above 70 °C derate linearly with 8 mW/K. For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
DC CHARACTERISTICS Type 74HC04
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
T
=25°C
amb
V
V
V
V
I I
I
IH
IL
OH
OL
LI OZ
CC
HIGH-level input voltage 2.0 1.5 1.2 − V
LOW-level input voltage 2.0 − 0.8 0.5 V
HIGH-level output voltage VI=VIHor V
LOW-level output voltage VI=VIHor V
input leakage current VI=VCCor GND 6.0 − 0.1 ±0.1 µA 3-state output OFF current VI=VIHor VIL;
quiescent supply current VI=VCCor GND; IO= 0 6.0 −−2µA
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OTHER V
CC
(V)
4.5 3.15 2.4 − V
6.0 4.2 3.2 − V
4.5 − 2.1 1.35 V
6.0 − 2.8 1.8 V
IL
IO= −20 µA 2.0 1.9 2.0 − V I
= −20 µA 4.5 4.4 4.5 − V
O
I
= −4.0 mA 4.5 3.98 4.32 − V
O
I
= −20 µA 6.0 5.9 6.0 − V
O
I
= −5.2 mA 6.0 5.48 5.81 − V
O
IL
IO=20µA 2.0 − 0 0.1 V I
=20µA 4.5 − 0 0.1 V
O
I
= 4.0 mA 4.5 − 0.15 0.26 V
O
I
=20µA 6.0 − 0 0.1 V
O
I
= 5.2 mA 6.0 − 0.16 0.26 V
O
6.0 −−±.0.5 µA
VO=VCCor GND
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
SYMBOL PARAMETER
T
= −40 to +85 °C
amb
V
IH
V
IL
V
OH
V
OL
I
LI
I
OZ
I
CC
HIGH-level input voltage 2.0 1.5 −−V
LOW-level input voltage 2.0 −−0.5 V
HIGH-level output voltage VI=VIHor V
LOW-level output voltage VI=VIHor V
input leakage current VI=VCCor GND 6.0 −−±1.0 µA 3-state output OFF current VI=VIHor VIL;
quiescent supply current VI=VCCor GND; IO= 0 6.0 −−20 µA
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OTHER V
CC
(V)
4.5 3.15 −−V
6.0 4.2 −−V
4.5 −−1.35 V
6.0 −−1.8 V
IL
IO= −20 µA 2.0 1.9 −−V I
=−20 µA 4.5 4.4 −−V
O
I
=−4.0 mA 4.5 3.84 −−V
O
=−20 µA 6.0 5.9 −−V
I
O
I
=−5.2 mA 6.0 5.34 −−V
O
IL
IO=20µA 2.0 −−0.1 V I
=20µA 4.5 −−0.1 V
O
= 4.0 mA 4.5 −−0.33 V
I
O
I
=20µA 6.0 −−0.1 V
O
I
= 5.2 mA 6.0 −−0.33 V
O
6.0 −−±.5.0 µA
VO=VCCor GND
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
SYMBOL PARAMETER
T
= −40 to +125 °C
amb
V
IH
V
IL
V
OH
V
OL
I
LI
I
OZ
I
CC
HIGH-level input voltage 2.0 1.5 −−V
LOW-level input voltage 2.0 −−0.5 V
HIGH-level output voltage VI=VIHor V
LOW-level output voltage VI=VIHor V
input leakage current VI=VCCor GND 6.0 −−±1.0 µA 3-state output OFF current VI=VIHor VIL;
quiescent supply current VI=VCCor GND; IO= 0 6.0 −−40 µA
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OTHER V
CC
(V)
4.5 3.15 −−V
6.0 4.2 −−V
4.5 −−1.35 V
6.0 −−1.8 V
IL
IO= −20 µA 2.0 1.9 −−V I
=−20 µA 4.5 4.4 −−V
O
I
=−20 µA 6.0 5.9 −−V
O
=−4.0 mA 4.5 3.7 −−V
I
O
I
=−5.2 mA 6.0 5.2 −−V
O
IL
IO=20µA 2.0 −−0.1 V I
=20µA 4.5 −−0.1 V
O
=20µA 6.0 −−0.1 V
I
O
I
= 4.0 mA 4.5 −−0.4 V
O
I
= 5.2 mA 6.0 −−0.4 V
O
6.0 −−±10.0 µA
VO=VCCor GND
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
Type 74HCT04
At recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
T
=25°C
amb
V
IH
V
IL
V
OH
V
OL
I
LI
I
OZ
I
CC
∆I
CC
T
= −40 to +85 °C
amb
V
IH
V
IL
V
OH
V
OL
I
LI
I
OZ
I
CC
∆I
CC
HIGH-level input voltage 4.5 to 5.5 2.0 1.6 − V LOW-level input voltage 4.5 to 5.5 − 1.2 0.8 V HIGH-level output voltage VI=VIHor V
LOW-level output voltage VI=VIHor V
input leakage current VI=VCCor GND 5.5 −−±0.1 µA 3-state output OFF current VI=VIHor VIL;
quiescent supply current VI=VCCor GND;
additional supply current per input VI=VCC− 2.1 V;
HIGH-level input voltage 4.5 to 5.5 2.0 −−V LOW-level input voltage 4.5 to 5.5 −−0.8 V HIGH-level output voltage VI=VIHor V
LOW-level output voltage VI=VIHor V
input leakage current VI=VCCor GND 5.5 −−±1.0 µA 3-state output OFF current VI=VIHor VIL;
quiescent supply current VI=VCCor GND;
additional supply current per input VI=VCC− 2.1 V;
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OTHER V
IL
CC
(V)
IO= −20 µA 4.5 4.4 4.5 − V I
= −4.0 mA 4.5 3.84 4.32 − V
O
IL
IO=20µA 4.5 − 0 0.1 V
= 4.0 mA 4.5 − 0.15 0.26 V
I
O
5.5 −−±0.5 µA VO=VCCor GND; IO=0
5.5 −−2µA IO=0
4.5 to 5.5 − 120 432 µA IO=0
IL
I
= −20 µA 4.5 4.4 −−V
O
I
=−4.0 mA 4.5 3.84 −−V
O
IL
I
=20µA 4.5 −−0.1 V
O
I
= 4.0 mA 4.5 −−0.33 V
O
−
−
5.5 −−±5.0 µA VO=VCCor GND; IO=0
5.5 −−20 µA IO=0
4.5 to 5.5 −−540 µA IO=0
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
SYMBOL PARAMETER
T
= −40 to +125 °C
amb
V
IH
V
IL
V
OH
V
OL
I
LI
I
OZ
I
CC
∆I
CC
HIGH-level input voltage 4.5 to 5.5 2.0 −−V LOW-level input voltage 4.5 to 5.5 −−0.8 V HIGH-level output voltage VI=VIHor V
LOW-level output voltage VI=VIHor V
input leakage current VI=VCCor GND 5.5 −−±1.0 µA 3-state output OFF current VI=VIHor VIL;
quiescent supply current VI=VCCor GND;
additional supply current per input VI=VCC− 2.1 V;
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OTHER V
IL
CC
(V)
IO= −20 µA 4.5 4.4 −−V I
=−4.0 mA 4.5 3.7 −−V
O
IL
IO=20µA 4.5 −−0.1 V I
= 4.0 mA 4.5 −−0.4 V
O
5.5 −−±10 µA VO=VCCor GND; IO=0
5.5 −−40 µA IO=0
4.5 to 5.5 −−590 µA IO=0
2003 Jul 23 10
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
AC CHARACTERISTICS Family 74HC04
GND = 0 V; tr=tf≤6.0 ns; CL=50pF.
SYMBOL PARAMETER
T
=25°C
amb
t
PHL/tPLH
propagation delay nA to nY
t
THL/tTLH
T
= −40 to +85 °C
amb
t
PHL/tPLH
output transition time see Figs 6 and 7 2.0 − 19 75 ns
propagation delay nA to nY
t
THL/tTLH
T
= −40 to +125 °C
amb
t
PHL/tPLH
output transition time see Figs 6 and 7 2.0 −−95 ns
propagation delay nA to nY
t
THL/tTLH
output transition time see Figs 6 and 7 2.0 −−110 ns
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS V
CC
(V)
see Figs 6 and 7 2.0 − 25 85 ns
4.5 − 917ns
6.0 − 714ns
4.5 − 715ns
6.0 − 613ns
see Figs 6 and 7 2.0 −−105 ns
4.5 −−21 ns
6.0 −−18 ns
4.5 −−19 ns
6.0 −−16 ns
see Figs 6 and 7 2.0 −−130 ns
4.5 −−26 ns
6.0 −−22 ns
4.5 −−22 ns
6.0 −−19 ns
2003 Jul 23 11
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
Family 74HCT04
GND = 0 V; tr=tf≤6.0 ns; CL=50pF.
SYMBOL PARAMETER
T
=25°C
amb
t
PHL/tPLH
propagation delay nA to nY
t
THL/tTLH
T
= −40 to +85 °C
amb
t
PHL/tPLH
output transition time see Figs 6 and 7 4.5 − 715ns
propagation delay nA to nY
t
THL/tTLH
T
= −40 to +125 °C
amb
t
PHL/tPLH
output transition time see Figs 6 and 7 4.5 −−19 ns
propagation delay nA to nY
t
THL/tTLH
output transition time see Figs 6 and 7 4.5 −−22 ns
AC WAVEFORMS
TEST CONDITIONS
MIN. TYP. MAX. UNIT
WAVEFORMS V
CC
(V)
see Figs 6 and 7 4.5 − 10 19 ns
see Figs 6 and 7 4.5 −−24 ns
see Figs 6 and 7 4.5 −−29 ns
nA input
GND
V
nY output
V
OH
OL
V
I
V
M
t
PHL
V
M
t
THL
10%
V
M
t
PLH
90%
V
M
t
MNA722
TLH
handbook, halfpage
For 74HC04: VM= 50%; VI= GND to VCC. For 74HCT04: VM= 1.3 V; VI= GND to 3.0 V.
Fig.6 Waveforms showing the data input (nA) to data output (nY) propagation delays and the output transition
times.
2003 Jul 23 12
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
handbook, halfpage
V
PULSE
GENERATOR
Definitions for test circuit: CL= Load capacitance including jig and probe capacitance. RT= Termination resistance should be equal to the output impedance Zo of the pulse generator.
I
V
CC
V
D.U.T
R
T
O
Fig.7 Load circuitry for switching times.
CL50 pF
MGK565
2003 Jul 23 13
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
PACKAGE OUTLINES
DIP14: plastic dual in-line package; 14 leads (300 mil)
SOT27-1
seating plane
L
Z
14
pin 1 index
1
D
A
2
A
A
1
e
b
w M
b
1
8
E
7
M
E
c
(e )
1
M
H
0 5 10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
UNIT
mm
inches
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
max.
OUTLINE
VERSION
SOT27-1
A
min.
A
1 2
max.
IEC JEDEC JEITA
050G04 MO-001 SC-501-14
b
1.73
1.13
0.068
0.044
b
0.53
0.38
0.021
0.015
1
cD
0.36
0.23
0.014
0.009
REFERENCES
(1) (1)
19.50
18.55
0.77
0.73
Ee M
6.48
6.20
0.26
0.24
2003 Jul 23 14
M
e
L
1
3.60
3.05
0.14
0.12
E
8.25
7.80
0.32
0.31
EUROPEAN
PROJECTION
10.0
8.3
0.39
0.33
H
0.2542.54 7.62
ISSUE DATE
w
0.010.1 0.3
99-12-27 03-02-13
max.
2.24.2 0.51 3.2
0.0870.17 0.02 0.13
(1)
Z
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
SO14: plastic small outline package; 14 leads; body width 3.9 mm
D
c
y
Z
14
pin 1 index
1
e
8
A
2
7
w M
b
p
SOT108-1
E
H
E
A
1
L
detail X
A
X
v M
A
Q
(A )
A
3
θ
L
p
0 2.5 5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
mm
inches
A
max.
1.75
0.069
A
1
0.25
0.10
0.010
0.004
A2A
1.45
1.25
0.057
0.049
0.25
0.01
b
3
p
0.49
0.25
0.36
0.19
0.019
0.0100
0.014
0.0075
(1)E(1)
cD
8.75
8.55
0.35
0.34
4.0
3.8
0.16
0.15
eHELLpQZywv θ
1.27
0.244
0.05
0.228
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
OUTLINE VERSION
SOT108-1
IEC JEDEC JEITA
076E06 MS-012
REFERENCES
2003 Jul 23 15
6.2
5.8
1.05
0.041
1.0
0.4
0.039
0.016
0.7
0.25
0.6
0.028
0.01 0.004
0.024
EUROPEAN
PROJECTION
0.25 0.1
0.01
(1)
0.7
0.3
0.028
0.012
ISSUE DATE
99-12-27 03-02-19
o
8
o
0
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm
D
c
y
Z
14
pin 1 index
8
A
2
A
E
H
E
1
SOT337-1
A
X
v M
A
Q
(A )
L
p
L
A
3
θ
p
7
b
p
cD
0.20
6.4
0.09
6.0
REFERENCES
MO-150
w M
0 2.5 5 mm
scale
(1)E(1)
5.4
0.65 1.25 0.2
5.2
1
e
DIMENSIONS (mm are the original dimensions)
mm
OUTLINE VERSION
SOT337-1
A
max.
2
0.21
0.05
b
3
1.80
1.65
IEC JEDEC JEITA
0.25
0.38
0.25
UNIT A1A2A
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
2003 Jul 23 16
detail X
eHELLpQZywv θ
7.9
7.6
1.03
0.63
0.9
0.7
EUROPEAN
PROJECTION
0.13 0.1
(1)
1.4
0.9
ISSUE DATE
99-12-27 03-02-19
o
8
o
0
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm
D
c
y
Z
14
pin 1 index
8
17
w M
b
e
p
A
2
A
1
E
H
E
L
detail X
SOT402-1
A
X
v M
A
Q
(A )
3
A
θ
L
p
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A1A
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
A
max.
1.1
0.15
0.05
mm
OUTLINE VERSION
SOT402-1 MO-153
A
0.25
b
3
p
0.30
0.19
2
0.95
0.80
IEC JEDEC JEITA
(1)E(2) (1)
cD
0.2
5.1
4.5
0.1
4.9
REFERENCES
4.3
0.65
2003 Jul 23 17
eHELLpQZywv θ
6.6
6.2
0.75
0.50
0.4
0.3
EUROPEAN
PROJECTION
0.13 0.10.21
0.72
0.38
ISSUE DATE
99-12-27 03-02-18
o
8
o
0
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; body 2.5 x 3 x 0.85 mm
A
D
B
A
A
E
1
SOT762-1
c
terminal 1 index area
terminal 1 index area
L
1
E
h
14
DIMENSIONS (mm are the original dimensions)
(1)
A
UNIT
mm
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
max.
A
0.05
0.00
b
1
0.30
0.18
e
26
13
c
0.2
e
1
b
9
D
h
0 2.5 5 mm
D
3.1
2.9
(1)
1.65
1.35
(1)
E
2.6
2.4
E
1.15
0.85
h
D
h
v
w
7
e
8
scale
0.51
detail X
C
M
ACCB
M
e
L
1
0.5
2
0.3
y
w
0.1v0.05
C
1
ye
y
0.05 0.1
1
y
X
OUTLINE
VERSION
SOT762-1 MO-241 - - -- - -
IEC JEDEC JEITA
REFERENCES
2003 Jul 23 18
EUROPEAN
PROJECTION
ISSUE DATE
02-10-17 03-01-27
Philips Semiconductors Product specification
Hex inverter 74HC04; 74HCT04
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device attheseoratanyotherconditionsabovethosegiveninthe Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentationorwarrantythatsuchapplicationswill be suitable for the specified use without further testing or modification.
Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to resultin personal injury. Philips Semiconductorscustomersusingorsellingtheseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes  Philips Semiconductors reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Jul 23 19
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613508/03/pp20 Date of release: 2003 Jul 23 Document order number: 9397 750 11256
SCA75
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