Philips 74ALVT16244DL, 74ALVT16244DGG Datasheet

74ALVT16244
2.5V/3.3V 16-bit buffer/driver (3-State)
Product specification Supersedes data of 1998 Feb 13 IC23 Data Handbook
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1998 Oct 07
Philips Semiconductors Product specification
SYMBOL
PARAMETER
UNIT
74AL VT162442.5V/3.3V 16-bit buffer/driver (3-State)
FEATURES
16-bit bus interface
5V I/O compatibile
3-State buffers
Output capability: +64mA/-32mA
TTL input and output switching levels
DESCRIPTION
The 74ALVT16244 is a high-performance BiCMOS product designed for V to 5V .
This device is a 16-bit buffer and line driver featuring non-inverting 3-State bus outputs. The device can be used as four 4-bit buffers, two 8-bit buffers, or one 16-bit buffer.
operation at 2.5V or 3.3V with I/O compatibility up
CC
Input and output interface capability to systems at 5V supply
Bus-hold data inputs eliminate the need for external pull-up
resistors to hold unused inputs
Live insertion/extraction permitted
Power-up 3-State
No bus current loading when output is tied to 5V bus
Latch-up protection exceeds 500mA per JEDEC Std 17
ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
QUICK REFERENCE DATA
CONDITIONS
T
= 25°C
amb
t
PLH
t
PHL
C C I
CCZ
IN
Out
Propagation delay nAx to nYx
Input capacitance DIR, OE VI = 0V or V Output capacitance V
CL = 50pF
= 0V or V
I/O
CC
CC
Total supply current Outputs disabled 40 70 µA
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
48-Pin Plastic SSOP Type III –40°C to +85°C 74ALVT16244 DL AV16244 DL SOT370-1 48-Pin Plastic TSSOP Type II –40°C to +85°C 74ALVT16244 DGG AV16244 DGG SOT362-1
TYPICAL
2.5V 3.3V
1.8
1.9
1.5
1.5 3 3 pF 9 9 pF
ns
LOGIC SYMBOL
1A0
47
1A1
46
1A2
44
1A3
43
1OE
1
2A0
41
2A1
40
2A2
38
2A3
37
2OE
48
1Y0
1Y1
1Y2
1Y3
2Y0
2Y1
2Y2
2Y3
LOGIC SYMBOL (IEEE/IEC)
3A0
2
36
3A1
3
35
3A2
5
33
3A3
32
6
3OE
25
4A0
8
30
4A1
9
29
4A2
11
27
4A3
26
12
4OE
24
3Y0
3Y1
3Y2
3Y3
4Y0
4Y1
4Y2
4Y3
SA00014
13
14
16
17
19
20
22
23
1OE 2OE 3OE 4OE
1A1 1A2 1A3 1A4 2A1 2A2 2A3 2A4 3A1
3A2 3A3 3A4 4A1 4A2 4A3 4A4
1 48 25 24
47 46
44 43 41
40 38 37 36 35 33 32
30 29
27 26
EN1 EN2 EN3 EN4
2
1
1
2 1
3 1
4 1
1Y1
3
1Y2
5
1Y3
6
1Y4
8
2Y1
9
2Y2
11
2Y3
12
2Y4
13
3Y1
14
3Y2
16
3Y3
17
3Y4
19
4Y1
20
4Y2
22
4Y3
23
4Y4
SA00019
2
853-1838 201441998 Oct 07
Philips Semiconductors Product specification
I
DC out ut current
mA
74ALVT162442.5V/3.3V 16-bit buffer/driver (3-State)
PIN CONFIGURATION
1OE
1Y0 1Y1
GND
1Y2 1Y3
V
CC
2Y0 2Y1
GND
2Y2 2Y3 3Y0 3Y1
GND
3Y2 3Y4
V
CC
4Y0 4Y1
GND
4Y2 4Y3
4OE
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
48
2OE
47
1A0
46
1A1
45
GND
44
1A2
43
1A3
42
V
41
2A0
40
2A1
39
GND
38
2A2
37
2A3
36
3A0
35
3A1
34
GND
33
3A2
32
3A3 V
31 30
4A0
29
4A1
28
GND
27
4A2
26
4A3
25
3OE
SA00013
CC
CC
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
47, 46, 44, 43 41, 40, 38, 37 36, 35, 33, 32 30, 29, 27, 26
2, 3, 5, 6
8, 9, 11, 12 13, 14, 16, 17 19, 20, 22, 23
1, 48
25, 24
4, 10, 15, 21
28, 34, 39, 45
7, 18, 31, 42 V
1A0 - 1A3, 2A0 - 2A3, 3A0 - 3A3,
Data inputs
4A0 - 4A3
1Y0 - 1Y3, 2Y0 - 2Y3, 3Y0 - 3Y3,
Data outputs
4Y0 - 4Y3
1OE, 2OE, 3OE, 4OE
Output enables
GND Ground (0V)
CC
Positive supply voltage
FUNCTION TABLE
INPUTS OUTPUTS
nOE nAx nYx
L L L L H H
H X Z
H = High voltage level L = Low voltage level X = Don’t care Z = High Impedance “off” state
ABSOLUTE MAXIMUM RATINGS
SYMBOL
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
1998 Oct 07
1, 2
PARAMETER CONDITIONS RATING UNIT
V
V
I V
I
OK OUT
OUT
T
CC IK
stg
DC supply voltage -0.5 to +4.6 V DC input diode current VI < 0 -50 mA
I
DC input voltage
3
-0.5 to +7.0 V DC output diode current VO < 0 -50 mA DC output voltage
p
3
Output in Off or High state -0.5 to +7.0 V
Output in Low state 128
Output in High state -64
Storage temperature range -65 to +150 °C
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3
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