The 74ALVC14 is a high-performance, low-power, low-voltage, Si-gate CMOS device and
superior to most advanced CMOS compatible TTL families.
The 74ALVC14 provides six inverting buffers with Schmitt-trigger action. It is capable of
transforming slowly changing input signals into sharply defined, jitter-free output signals.
2.Features
■ Wide supply voltage range from 1.65 V to 3.6 V
■ 3.6 V tolerant inputs/outputs
■ CMOS low power consumption
■ Direct interface with TTL levels (2.7 V to 3.6 V)
■ Power-down mode
■ Unlimited input rise and fall times
■ Latch-up performance exceeds 250 mA
■ Complies with JEDEC standard:
◆ JESD8-7 (1.65 V to 1.95 V)
◆ JESD8-5 (2.3 V to 2.7 V)
◆ JESD8-B/JESD36 (2.7 V to 3.6 V)
■ ESD protection:
◆ HBM EIA/JESD22-A114-B exceeds 2000 V
◆ MM EIA/JESD22-A115-A exceeds 200 V
■ Multiple package options
3.Quick reference data
Table 1:Quick reference data
SymbolParameterConditionsMinTypMaxUnit
, t
t
PHL
propagation delay nA
PLH
to nY
VCC= 1.8 V; CL= 30 pF;
R
= 1 kΩ
L
= 2.5 V; CL= 30 pF;
V
CC
R
= 500 Ω
L
= 2.7 V; CL= 50 pF;
V
CC
R
= 500 Ω
L
= 3.3 V; CL= 50 pF;
V
CC
R
= 500 Ω
L
-2.9-ns
-2.2-ns
-2.8-ns
-2.4-ns
Philips Semiconductors
74ALVC14
Hex inverting Schmitt trigger
Table 1:Quick reference data
…continued
SymbolParameterConditionsMinTypMaxUnit
C
I
C
PD
input capacitance-3.5-pF
power dissipation
VCC = 3.3 V
[1] [2]
-25-pF
capacitance per buffer
[1] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD× V
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL× V
[2] The condition is VI = GND to VCC.
2
× fi× N + Σ(CL× V
CC
2
× fo) = sum of the outputs.
CC
2
× fo) where:
CC
4.Ordering information
Table 2:Ordering information
Type numberPackage
Temperature range NameDescriptionVersion
74ALVC14D−40 °C to +85 °CSO14plastic small outline package; 14 leads;
body width 3.9 mm
74ALVC14PW−40 °C to +85 °CTSSOP14plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
74ALVC14BQ−40 °C to +85 °CDHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5 × 3 × 0.85 mm
Product data sheetRev. 03 — 15 February 20053 of 16
Philips Semiconductors
6.Pinning information
6.1 Pinning
74ALVC14
Hex inverting Schmitt trigger
1
1AV
2
1Y6A
3
2A6Y
4
2Y5A
5
3A5Y
6
3Y4A
7
GND4Y
14
Fig 4. Pin configuration SO14 and
TSSOP14
6.2 Pin description
Table 3:Pin description
SymbolPinDescription
1A11 data input A
1Y21 data output Y
2A32 data input A
2Y42 data output Y
3A53 data input A
3Y63 data output Y
GND7ground (0 V)
4Y84 data output Y
4A94 data input A
5Y105 data output Y
5A115 data input A
6Y126 data output Y
6A136 data input A
V
CC
14supply voltage
001aac498
GND
1A
1
14
(1)
7
GND
V
14
8
4Y
CC
001aac499
terminal 1
index area
213
1Y6A
312
14
CC
13
12
11
10
9
8
2A6Y
411
2Y5A
510
3A5Y
69
3Y4A
Transparent top view
The die substrate is attached to the
exposed die pad using conductive die
attach material. It can not be used as
a supply pin or input.
Product data sheetRev. 03 — 15 February 20054 of 16
Philips Semiconductors
7.Functional description
7.1 Function table
74ALVC14
Hex inverting Schmitt trigger
Table 4:Function table
InputOutput
nAnY
LH
HL
[1] H = HIGH voltage level;
L = LOW voltage level.
8.Limiting values
Table 5:Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol ParameterConditionsMinMaxUnit
V
CC
V
I
V
O
I
IK
I
OK
I
O
,
I
CC
I
GND
T
stg
P
tot
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC = 0 V (Power-down mode), the output voltage can be 3.6 V in normal operation.
[3] For SO14 packages: P
For TSSOP14 packages: P
For DHVQFN14 packages: P
[1]
supply voltage−0.5+4.6V
input voltage
output voltageActive mode
Power-down mode
[1]
−0.5+4.6V
[1]
−0.5VCC + 0.5 V
[2]
−0.5+4.6V
input diode currentVI < 0 V-−50mA
output diode currentVO > VCC or VO < 0 V-±50mA
output source or sink
VO = 0 V to V
CC
-±50mA
current
VCC or GND current-±100mA
storage temperature−65+150°C
total power dissipationT