Product specification
File under Integrated Circuits, IC06
1999 Sep 17
Philips SemiconductorsProduct specification
Quad 2-input EXCLUSIVE-OR gate74AHC86; 74AHCT86
FEATURES
• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
• Inputsacceptsvoltageshigherthan
V
CC
• For AHC only:
operates with CMOS input levels
• For AHCT only:
operates with TTL input levels
• Specified from −40 to +85 °C and
−40 to +125 °C.
DESCRIPTION
The 74AHC/AHCT86 are high-speed
Si-gate CMOS devices and are pin
compatible with Low power Schottky
TTL (LSTTL). They are specified in
compliance with JEDEC standard
no. 7A.
The 74AHC/AHCT86 provides the
2-input EXCLUSIVE-OR function.
QUICK REFERENCE DATA
Ground = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
SYMBOLPARAMETERCONDITIONS
t
PHL/tPLH
C
I
C
O
C
PD
propagation delay
nA, nB to nY
input capacitanceVI=VCCor GND3.03.0pF
output capacitance VI=VCCor GND4.04.0pF
power dissipation
capacitance
CL=15pF;
VCC=5V
CL=50pF;
f = 1 MHz;
notes 1 and 2
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
∑ (CL× V
2
× fo) = sum of outputs;
CC
CL= output load capacitance in pF;
VCC= supply voltage in Volts.
1, 4, 9 and 121A to 4Adata inputs
2, 5, 10 and 131B to 4Bdata inputs
3, 6, 8 and 111Y to 4Ydata outputs
7GNDground (0 V)
14V
CC
DC supply voltage
handbook, halfpage
handbook, halfpage
MNA455
V
14
CC
13
4B
12
4A
11
4Y
10
3B
9
3A
8
3Y
GND
1A
1
1B
2
3
1Y
4
2A
2B
2Y
86
5
6
7
Fig.1 Pin configuration.
1
2
4
5
= 1
= 1
3
6
handbook, halfpage
handbook, halfpage
A
1
1A
2
1B
4
2A
5
2B
9
3A
10
3B
12
4A
13
4B
1Y
2Y
3Y
4Y
MNA456
11
Fig.2 Logic symbol.
3
6
8
9
10
12
13
= 1
= 1
MNA457
8
11
Fig.3 IEC logic symbol.
1999 Sep 173
B
Fig.4 Logic diagram (one gate).
Y
MNA458
Philips SemiconductorsProduct specification
Quad 2-input EXCLUSIVE-OR gate74AHC86; 74AHCT86
RECOMMENDED OPERATING CONDITIONS
SYMBOLPARAMETERCONDITIONS
UNIT
MIN.TYP.MAX.MIN.TYP.MAX.
74AHC74AHCT
V
CC
V
I
V
O
T
amb
t
(∆t/∆f) input rise and fall
r,tf
DC supply voltage2.05.05.54.55.05.5V
input voltage0−5.50−5.5V
output voltage0−V
operating ambient
temperature
see DC and AC
characteristics per device
−40+25+85−40+25+85°C
−40+25+125−40+25+125°C
0−V
CC
CC
VCC= 3.3 ±0.3 V−−100−−−ns/V
times except for
Schmitt trigger inputs
V
=5±0.5 V−−20−−20
CC
V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
SYMBOLPARAMETERCONDITIONSMIN.MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage−0.5+7.0V
input voltage−0.5+7.0V
DC input diode currentVI< −0.5 V; note 1−−20mA
DC output diode currentVO< −0.5 Vor VO>VCC+ 0.5 V; note 1−±20mA
DC output source or sink current−0.5V<VO<VCC+ 0.5 V−±25mA
DC VCC or GND current−±75mA
storage temperature−65+150°C
power dissipation per packagefor temperature range: −40 to +125 °C;
−500mW
note 2
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO package: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP package: above 60 °C the value of PD derates linearly with 5.5 mW/K.
1999 Sep 174
Philips SemiconductorsProduct specification
Quad 2-input EXCLUSIVE-OR gate74AHC86; 74AHCT86
DC CHARACTERISTICS
Family 74AHC
Over recommended operating conditions; voltage are referenced to GND (ground=0V).
SYMBOLPARAMETER
V
IH
HIGH-level input
voltage
V
IL
LOW-level input
voltage
V
OH
HIGH-level output
voltage; all
outputs
HIGH-level output
voltage
V
OL
LOW-level output
voltage; all
outputs
LOW-level output
voltage
I
I
input leakage
current
I
OZ
3-state output
OFF current
I
CC
quiescent supply
current
C
I
input capacitance−−310−10−10pF
TEST CONDITIONST
25−40 to +85−40 to +125
amb
(°C)
UNIT
OTHERVCC (V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
2.01.5−−1.5−1.5−V
3.02.1−−2.1−2.1−
5.53.85 −−3.85 −3.85 −
2.0−− 0.5−0.5−0.5V
3.0−− 0.9−0.9−0.9
5.5−− 1.65−1.65−1.65
VI=VIHor VIL;
IO= −50 µA
2.01.92.0−1.9−1.9−V
3.02.93.0−2.9−2.9−
4.54.44.5−4.4−4.4−
V
I=VIH
or VIL;
3.02.58 −−2.48 −2.40 −V
IO= −4.0 mA
V
I=VIH
or VIL;
4.53.94 −−3.8−3.70 −
IO= −8.0 mA
VI=VIHor VIL;
IO=50µA
2.0−00.1−0.1−0.1V
3.0−00.1−0.1−0.1
4.5−00.1−0.1−0.1
V
I=VIH
or VIL;
3.0−− 0.36−0.44−0.55V
IO= 4.0 mA
V
I=VIH
or VIL;
4.5−− 0.36−0.44−0.55
IO= 8.0 mA
VI=VCCor GND5.5−− 0.1−1.0−2.0µA
VI=VIHor VIL;
5.5−− ±0.25 −±2.5−±10.0 µA
VO=VCCor GND
VI=VCCor GND;
5.5−− 2.0−20−40µA
IO=0
1999 Sep 175
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