Product specification
Supersedes data of 1999 Jan 11
File under Integrated Circuits, IC06
1999 Sep 27
Philips SemiconductorsProduct specification
Hex inverting Schmitt trigger74AHC14; 74AHCT14
FEATURES
• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
• Balanced propagation delays
• Inputsacceptsvoltageshigherthan
V
CC
• For AHC only:
operates with CMOS input levels
• For AHCT only:
operates with TTL input levels
• Specified from
−40 to +85 and +125 °C.
DESCRIPTION
The 74AHC/AHCT14 are high-speed
Si-gate CMOS devices and are pin
compatible with low power Schottky
TTL (LSTTL). They are specified in
compliance with JEDEC standard
No. 7A.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
SYMBOLPARAMETERCONDITIONS
t
PHL/tPLH
C
I
C
O
C
PD
propagation delay
nA to nY
input capacitanceVI=VCCor GND3.03.0pF
output capacitance4.04.0pF
power dissipation
capacitance
CL=15pF;
VCC=5V
CL= 50 pF;
f = 1 MHz;
notes 1 and 2
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
∑ (CL× V
2
× fo) = sum of outputs;
CC
CL= output load capacitance in pF;
VCC= supply voltage in Volts.
2. The condition is VI= GND to VCC.
PINNING
TYPICAL
UNIT
AHCAHCT
3.24.0ns
1012pF
The 74AHC/AHCT14 provide six
inverting buffers with Schmitt-trigger
action. They are capable of
transforming slowly changing input
signalsinto sharply defined, jitter-free
output signals.
FUNCTION TABLE
See note 1.
INPUTSOUTPUTS
nAnY
LH
HL
Note
1. H = HIGH voltage level;
L = LOW voltage level.
PINSYMBOLDESCRIPTION
1, 3, 5, 9, 11 and 131A to 6Adata inputs
2, 4, 6, 8, 10 and 121Y to 6Ydata outputs
7GNDground (0 V)
14V
DC supply voltage2.05.05.54.55.05.5V
input voltage0−5.50−5.5V
output voltage0−V
operating ambient temperature
range
see DC and AC
characteristics per
−40+25+85−40+25+85°C
−40+25+125−40+25+125°C
0−V
CC
CC
V
device
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
SYMBOLPARAMETERCONDITIONSMIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage−0.5+7.0V
input voltage range−0.5+7.0V
DC input diode currentVI< −0.5 V; note 1−−20mA
DC output diode currentVO< −0.5 Vor VO>VCC+ 0.5 V; note 1−±20mA
DC output source or sink current −0.5V<VO<VCC+ 0.5 V−±25mA
DC VCC or GND current−±75mA
storage temperature range−65+150 °C
power dissipation per packagefor temperature range: −40 to +125 °C; note 2−500mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.
1999 Sep 274
Philips SemiconductorsProduct specification
Hex inverting Schmitt trigger74AHC14; 74AHCT14
DC CHARACTERISTICS
Type 74AHC14
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
SYMBOLPARAMETER
V
T+
positive going
threshold
V
T−
negative going
threshold
V
H
hysteresis
(VT+− VT−)
V
OH
HIGH-level output
voltage; all outputs
HIGH-level output
voltage
V
OL
LOW-level output
voltage; all outputs
LOW-level output
voltage
I
I
input leakage
current
I
CC
quiescent supply
current
C
I
input capacitance−310−10−10pF
TEST CONDITIONST
25−40 to +85−40 to +125
amb
(°C)
UNIT
OTHERVCC(V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
3.0−− 2.2−2.2−2.2V
4.5−− 3.15−3.15−3.15
5.5−− 3.85−3.85−3.85
3.00.9−−0.9−0.9−V
4.51.35 −−1.35 −1.35 −
5.51.65 −−1.65 −1.65 −
3.00.3−1.20.31.20.25 1.2V
4.50.4−1.40.41.40.35 1.4
5.50.5−1.60.51.60.45 1.6
VI=VIHor VIL;
IO= −50 µA
2.01.92.0−1.9−1.9−V
3.02.93.0−2.9−2.9−
4.54.44.5−4.4−4.4−
V
I=VIH
or VIL;
3.02.58 −−2.48 −2.40 −V
IO= −4.0 mA
V
I=VIH
or VIL;
4.53.94 −−3.8−3.70 −
IO= −8.0 mA
VI=VIHor VIL;
IO=50µA
2.0−00.1−0.1−0.1V
3.0−00.1−0.1−0.1
4.5−00.1−0.1−0.1
V
I=VIH
or VIL;
3.0−− 0.36−0.44−0.55V
IO=4mA
V
I=VIH
or VIL;
4.5−− 0.36−0.44−0.55
IO=8mA
VI=VCCor GND5.5−− 0.1−1.0−2.0µA
VI=VCCor GND;
5.5−− 2.0−20−40µA
IO=0
1999 Sep 275
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