• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V;
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
• Balanced propagation delays
• Inputsacceptsvoltageshigherthan
V
CC
• For AHC only:
operates with CMOS input levels
• For AHCT only:
operates with TTL input levels
• Specified from
−40 to +85 and +125 °C.
DESCRIPTION
The 74AHC/AHCT132 are
high-speed Si-gate CMOS devices
and are pin compatible with Low
power Schottky TTL (LSTTL). They
are specified in compliance with
JEDEC standard No. 7A.
The 74AHC/AHCT132 contain four
2-input NAND gates which accept
standard input signals. They are
capable of transforming slowly
changing input signals into sharply
defined, jitter free output signals.
The gate switches at different points
for positive and negative-going
signals. The difference between the
positive voltage VT+and the negative
VT− is defined as the hysteresis
voltage VH.
FUNCTION TABLE
See note 1.
INPUTSOUTPUT
nAnBnY
LLH
LHH
HLH
HHL
Note
1. H = HIGH voltage level; L = LOW voltage level.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
SYMBOLPARAMETERCONDITIONS
t
PHL/tPLH
C
I
C
O
C
PD
propagation delay
nA to nY
input capacitanceVI=VCCor GND3.03.0pF
output capacitance4.04.0pF
power dissipation
capacitance
CL= 15 pF;
VCC=5V
CL= 50 pF;
f = 1 MHz;
notes 1 and 2
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
∑ (CL× V
2
× fo) = sum of outputs;
CC
CL= output load capacitance in pF;
VCC= supply voltage in Volts.
DC supply voltage2.05.05.54.55.05.5V
input voltage0−5.50−5.5V
output voltage0−V
operating ambient temperature
range
see DC and AC
characteristics per
device
handbook, halfpage
A
B
MNA409
Fig.4 Logic diagram (one Schmitt trigger).
74AHC74AHCT
MIN.TYP. MAX. MIN.TYP. MAX.
0−V
CC
−40+25+85−40+25+85°C
−40+25+125 −40+25+125 °C
Y
UNIT
V
CC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
SYMBOLPARAMETERCONDITIONSMIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC voltage−0.5+7.0V
input voltage range−0.5+7.0V
DC input diode currentVI< −0.5 V; note 1−−20mA
DC output diode currentVO< −0.5 Vor VO>VCC+ 0.5 V; note 1−±20mA
DC output source or sink current −0.5V<VO<VCC+ 0.5 V−±25mA
DC VCC or GND current−±75mA
storage temperature range−65+150 °C
power dissipation per packagefor temperature range: −40 to +125 °C; note 2−500mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.