Philips 74ahc ahct86 DATASHEETS

INTEGRATED CIRCUITS
DATA SH EET
74AHC86; 74AHCT86
Quad 2-input EXCLUSIVE-OR gate
Product specification File under Integrated Circuits, IC06
1999 Sep 17
Quad 2-input EXCLUSIVE-OR gate 74AHC86; 74AHCT86

FEATURES

ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V
Inputsacceptsvoltageshigherthan V
CC
For AHC only: operates with CMOS input levels
For AHCT only: operates with TTL input levels
Specified from 40 to +85 °C and
40 to +125 °C.

DESCRIPTION

The 74AHC/AHCT86 are high-speed Si-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A.
The 74AHC/AHCT86 provides the 2-input EXCLUSIVE-OR function.

QUICK REFERENCE DATA

Ground = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
O
C
PD
propagation delay nA, nB to nY
input capacitance VI=VCCor GND 3.0 3.0 pF output capacitance VI=VCCor GND 4.0 4.0 pF power dissipation
capacitance
CL=15pF; VCC=5V
CL=50pF; f = 1 MHz; notes 1 and 2
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz; fo= output frequency in MHz; (CV
2
× fo) = sum of outputs;
CC
CL= output load capacitance in pF; VCC= supply voltage in Volts.
2. The condition is VI= GND to VCC.

FUNCTION TABLE

See note 1.
INPUT OUTPUT
TYPICAL
UNIT
AHC AHCT
3.4 3.4 ns
10 12 pF
nA nB nY
LLL LHH HLH HHL
Note
1. H = HIGH voltage level; L = LOW voltage level.

ORDERING INFORMATION

OUTSIDE NORTH
AMERICA
NORTH AMERICA
PINS PACKAGE MATERIAL CODE
PACKAGES
74AHC86D 74AHC86D 14 SO plastic SOT108-1 74AHC86PW 74AHC86PW DH 14 TSSOP plastic SOT402-1 74AHCT86D 74AHCT86D 14 SO plastic SOT108-1 74AHCT86PW 74AHCT86PW DH 14 TSSOP plastic SOT402-1
1999 Sep 17 2
Quad 2-input EXCLUSIVE-OR gate 74AHC86; 74AHCT86

PINNING

PIN SYMBOL DESCRIPTION
1, 4, 9 and 12 1A to 4A data inputs 2, 5, 10 and 13 1B to 4B data inputs 3, 6, 8 and 11 1Y to 4Y data outputs 7 GND ground (0 V) 14 V
CC
DC supply voltage
handbook, halfpage
handbook, halfpage
MNA455
V
14
CC
13
4B
12
4A
11
4Y
10
3B
9
3A
8
3Y
GND
1A
1
1B
2 3
1Y
4
2A 2B 2Y
86
5 6 7
Fig.1 Pin configuration.
1 2
4 5
= 1
= 1
3
6
handbook, halfpage
handbook, halfpage
A
1
1A
2
1B
4
2A
5
2B
9
3A
10
3B
12
4A
13
4B
1Y
2Y
3Y
4Y
MNA456
11
Fig.2 Logic symbol.
3
6
8
9
10
12 13
= 1
= 1
MNA457
8
11
Fig.3 IEC logic symbol.
1999 Sep 17 3
B
Fig.4 Logic diagram (one gate).
Y
MNA458
Quad 2-input EXCLUSIVE-OR gate 74AHC86; 74AHCT86

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74AHC 74AHCT
V
CC
V
I
V
O
T
amb
t
(t/f) input rise and fall
r,tf
DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 5.5 0 5.5 V output voltage 0 V operating ambient
temperature
see DC and AC characteristics per device
40 +25 +85 40 +25 +85 °C
40 +25 +125 40 +25 +125 °C
0 V
CC
CC
VCC= 3.3 ±0.3 V −−100 −−−ns/V times except for Schmitt trigger inputs
V
=5±0.5 V −−20 −−20
CC
V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage 0.5 +7.0 V input voltage 0.5 +7.0 V DC input diode current VI< 0.5 V; note 1 −−20 mA DC output diode current VO< 0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA DC output source or sink current 0.5V<VO<VCC+ 0.5 V −±25 mA DC VCC or GND current −±75 mA storage temperature 65 +150 °C power dissipation per package for temperature range: 40 to +125 °C;
500 mW
note 2
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO package: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP package: above 60 °C the value of PD derates linearly with 5.5 mW/K.
1999 Sep 17 4
Quad 2-input EXCLUSIVE-OR gate 74AHC86; 74AHCT86
DC CHARACTERISTICS Family 74AHC
Over recommended operating conditions; voltage are referenced to GND (ground=0V).
SYMBOL PARAMETER
V
IH
HIGH-level input voltage
V
IL
LOW-level input voltage
V
OH
HIGH-level output voltage; all outputs
HIGH-level output voltage
V
OL
LOW-level output voltage; all outputs
LOW-level output voltage
I
I
input leakage current
I
OZ
3-state output OFF current
I
CC
quiescent supply current
C
I
input capacitance −−310−10 10 pF
TEST CONDITIONS T
25 40 to +85 40 to +125
amb
(°C)
UNIT
OTHER VCC (V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
2.0 1.5 −−1.5 1.5 V
3.0 2.1 −−2.1 2.1
5.5 3.85 −−3.85 3.85
2.0 −− 0.5 0.5 0.5 V
3.0 −− 0.9 0.9 0.9
5.5 −− 1.65 1.65 1.65
VI=VIHor VIL; IO= 50 µA
2.0 1.9 2.0 1.9 1.9 V
3.0 2.9 3.0 2.9 2.9
4.5 4.4 4.5 4.4 4.4
V
I=VIH
or VIL;
3.0 2.58 −−2.48 2.40 V
IO= 4.0 mA V
I=VIH
or VIL;
4.5 3.94 −−3.8 3.70
IO= 8.0 mA VI=VIHor VIL;
IO=50µA
2.0 0 0.1 0.1 0.1 V
3.0 0 0.1 0.1 0.1
4.5 0 0.1 0.1 0.1
V
I=VIH
or VIL;
3.0 −− 0.36 0.44 0.55 V
IO= 4.0 mA V
I=VIH
or VIL;
4.5 −− 0.36 0.44 0.55
IO= 8.0 mA VI=VCCor GND 5.5 −− 0.1 1.0 2.0 µA
VI=VIHor VIL;
5.5 −− ±0.25 −±2.5 −±10.0 µA
VO=VCCor GND VI=VCCor GND;
5.5 −− 2.0 20 40 µA
IO=0
1999 Sep 17 5
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