Philips 74ahc ahct541 DATASHEETS

INTEGRATED CIRCUITS

DATA SH EET

74AHC541; 74AHCT541

Octal buffer/line driver; 3-state

Product speciﬁcation Supersedes data of 1998 Sep 21 File under Integrated Circuits, IC06

1999 Nov 24

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC541; 74AHCT541

FEATURES

• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V

DESCRIPTION

The 74AHC/AHCT541 is a high-speed Si-gate CMOS device.

The 74AHC/AHCT541 are octal non-inverting buffer/line drivers with 3-state bus compatible outputs.

• Balanced propagation delays

• All inputs have a Schmitt-trigger action

• Inputs accepts voltages higher than V

CC

• For AHC only: operates with CMOS input levels

The 3-state outputs are controlled by the output enable inputs OE0 and OE1.

A HIGH on OEn causes the outputs to assume a high-impedance OFF-state.

• For AHCT only: operates with TTL input levels

• Specified from −40 to +85 °C and −40 to +125 °C.

QUICK REFERENCE DATA

Ground = 0 V; T

=25°C; tr=tf≤3.0 ns.

amb

SYMBOL PARAMETER CONDITIONS

t

PHL/tPLH

C

I

C

O

C

PD

propagation delay Anto Y

n

input capacitance VI=VCC or GND 3 3 pF output capacitance 4.0 4.0 pF power dissipation capacitance CL= 50 pF; f = 1 MHz;

CL= 15 pF; VCC= 5 V 3.5 3.5 ns

notes 1 and 2

TYPICAL

UNIT

AHC AHCT

10 12 pF

Notes

1. C

is used to determine the dynamic power dissipation (PDin µW).

PD

PD=CPD× V

= input frequency in MHz;

f

i

2

× fi+ ∑ (CL× V

CC

fo= output frequency in MHz; ∑ (CL× V

2

× fo) = sum of outputs;

CC

CL= output load capacitance in pF; VCC= supply voltage in Volts.

2. The condition is VI= GND to VCC.

2

× fo) where:

CC

1999 Nov 24 2

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC541; 74AHCT541

FUNCTION TABLE

See note 1.

INPUT OUTPUT

OE

0

OE

1

A

n

Y

n

LLLL LLHH XHXZ

HXXZ

Note

1. H = HIGH voltage level;

L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.

ORDERING INFORMATION

OUTSIDE NORTH

AMERICA

NORTH AMERICA

PINS PACKAGE MATERIAL CODE

PACKAGES

74AHC541D 74AHC541D 20 SO plastic SOT163-1 74AHC541PW 74AHC541PW DH 20 TSSOP plastic SOT360-1 74AHCT541D 74AHCT541D 20 SO plastic SOT163-1 74AHCT541PW 7AHCT541PW DH 20 TSSOP plastic SOT360-1

PINNING

PIN SYMBOL DESCRIPTION

1 2, 3, 4, 5, 6, 7, 8 and 9 A

OE

0

to A

output enable input

7

data inputs 10 GND ground (0 V) 11, 12, 13, 14, 15, 16, 17 and 18 Y 19 20 V

OE

7

CC

to Y

1

0

data inputs/outputs

output enable input

DC supply voltage

1999 Nov 24 3

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC541; 74AHCT541

handbook, halfpage

OE

A A

A A A A A A

GND

1

0

2

0

3

1

4

2

5

3 4 5 6 7

541

6 7 8 9

10

MNA178

V

20

CC

19

OE

1

Y

18

0

Y

17

1

Y

16

2

Y

15

3

Y

14

4

Y

13

5

Y

12

6

Y

11

7

Fig.1 Pin configuration.

A

0

2

Y

0

18

A

1

3

A

2

4

A

3

5

A

4

6

A

5

7

A

6

8

A

7

9

OE

0

1

OE

1

19

Y

1

Y

2

Y

3

Y

4

Y

5

Y

6

Y

7

MNA179

Fig.2 Logic symbol.

17

handbook, halfpage

16

15

14

13

12

11

1

&

19

2 3

4 5 6 7 8 9

EN

18 17

16 15 14 13 12 11

MNA180

Fig.3 IEEE/IEC logic symbol.

1999 Nov 24 4

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC541; 74AHCT541

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER CONDITIONS

UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

74AHC 74AHCT

V

CC

V

I

V

O

T

amb

DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 − 5.5 0 − 5.5 V output voltage 0 − V operating ambient temperature see DC and AC

characteristics per

−40 +25 +85 −40 +25 +85 °C

−40 +25 +125 −40 +25 +125 °C

0 − V

CC

V

device

t

(∆t/∆f) input rise and fall times VCC= 3.3 ±0.3 V −−100 −−−ns/V

r,tf

=5±0.5 V −−20 −−20

V

CC

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground=0V).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

V

I

IK

I

OK

I

O

I

CC

T

stg

P

D

DC supply voltage −0.5 +7.0 V input voltage −0.5 +7.0 V DC input diode current VI<−0.5 V; note 1 −−20 mA DC output diode current VO<−0.5 Vor VO> VCC+ 0.5 V; note 1 −±20 mA DC output source or sink current −0.5 V < VO< VCC+ 0.5 V −±25 mA DC VCC or GND current −±75 mA storage temperature −65 +150 °C power dissipation per package for temperature range: −40 to +125 °C; note 2 − 500 mW

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. For SO-package: above 70 °C the value of P

derates linearly with 8 mW/K.

D

For TSSOP-package: above 60 °C the value of PDderates linearly with 5.5 mW/K.

1999 Nov 24 5