Philips 74ahc ahct244 DATASHEETS
INTEGRATED CIRCUITS
DATA SH EET
74AHC244; 74AHCT244
Octal buffer/line driver; 3-state
Product specification
Supersedes data of 1999 Feb 24
File under Integrated Circuits, IC06
1999 Sep 28
Philips Semiconductors Product specification
Octal buffer/line driver; 3-state 74AHC244; 74AHCT244
FEATURES
• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
• Balanced propagation delays
• All inputs have a Schmitt-trigger
action
• Inputsacceptsvoltageshigherthan
V
CC
• For AHC only:
operates with CMOS input levels
• For AHCT only:
operates with TTL input levels
• Specified from
−40 to +85 and +125 °C.
DESCRIPTION
The 74AHC/AHCT244 is a
high-speed Si-gate CMOS device.
The 74AHC/AHCT244 is an octal
non-inverting buffer/line driver with
3-state outputs.
The 3-state outputs are controlled by
the outputs enable inputs 1OE and
2OE.
AHIGHon nOE causes theoutputsto
assume a high-impedanceOFF state.
FUNCTION TABLE
See note 1.
INPUTS OUTPUT
OE nA
n
n
LLL
LHH
HXZ
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF state.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
O
C
PD
propagation delay
1Anto 1Yn;
2Anto 2Y
n
input capacitance VI=VCCor GND 3.5 3.5 pF
output capacitance 4.0 4.0 pF
power dissipation
capacitance
CL=15pF;
VCC=5V
CL=50pF;
f = 1 MHz;
notes 1 and 2
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
∑ (CL× V
2
× fo) = sum of outputs;
CC
CL= output load capacitance in pF;
VCC= supply voltage in Volts.
2. The condition is VI= GND to VCC.
nY
n
TYPICAL
AHC AHCT
3.5 5.0 ns
10 12 pF
UNIT
1999 Sep 28 2
Philips Semiconductors Product specification
Octal buffer/line driver; 3-state 74AHC244; 74AHCT244
PINNING
PIN SYMBOL DESCRIPTION
11
2, 4, 6 and 8 1A
3, 5, 7 and 9 2Y
10 GND ground (0 V)
11, 13, 15 and 17 2A
12, 14, 16 and 18 1Y
19 2
20 V
ORDERING INFORMATION
OE output enable input (active LOW)
to 1A
0
to 2Y
0
to 2A
3
to 1Y
3
3
3
0
0
data inputs
bus outputs
data inputs
data outputs
OE output enable input (active LOW)
CC
DC supply voltage
OUTSIDE NORTH
AMERICA
NORTH AMERICA
PINS PACKAGE MATERIAL CODE
PACKAGES
74AHC244D 74AHC244D 20 SO plastic SOT163-1
74AHC244PW 74AHC244PW DH 20 TSSOP plastic SOT360-1
74AHCT244D 74AHCT244D 20 SO plastic SOT163-1
74AHCT244PW 7AHCT244PW DH 20 TSSOP plastic SOT360-1
1999 Sep 28 3
Philips Semiconductors Product specification
Octal buffer/line driver; 3-state 74AHC244; 74AHCT244
handbook, halfpage
1OE
1A
2Y
1A
2Y
1A
2Y
1A
2Y
GND
1
2
0
3
0
4
1
5
1
2
2
3
3
244
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
MNA162
Fig.1 Pin configuration.
handbook, halfpage
V
CC
2OE
1Y
2A
1Y
2A
1Y
2A
1Y
2A
0
0
1
1
2
2
3
3
1A
0
2
1Y
0
18
handbook, halfpage
1
EN
2
4
6
8
19
EN
11
13
15
17
MNA169
18
16
14
12
9
7
5
3
Fig.2 IEEE/IEC logic symbol.
1A
1
4
1A
2
6
1A
3
8
1OE
1
2A
2A
2A
2A
2OE
0
1
2
3
17
15
13
11
19
Fig.3 Logic diagram.
1Y
1
1Y
2
1Y
3
2Y
0
2Y
1
2Y
2
2Y
3
MNA170
16
14
12
3
5
7
9
1999 Sep 28 4
Philips Semiconductors Product specification
Octal buffer/line driver; 3-state 74AHC244; 74AHCT244
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74AHC 74AHCT
V
CC
V
I
V
O
T
amb
DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V
input voltage 0 − 5.5 0 − 5.5 V
output voltage 0 − V
operating ambient temperature
range
see DC and AC
characteristics per
−40 +25 +85 −40 +25 +85 °C
−40 +25 +125 −40 +25 +125 °C
0 − V
CC
CC
V
device
t
(∆t/∆f) input rise and fall rates VCC= 3.3 V ±0.3 V −−100 −−−ns/V
r,tf
=5V±0.5 V −−20 −−20
V
CC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage −0.5 +7.0 V
input voltage range −0.5 +7.0 V
DC input diode current VI< −0.5 V; note 1 −−20 mA
DC output diode current VO< −0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA
DC output source or sink current −0.5V<VO<VCC+ 0.5 V −±25 mA
DC VCC or GND current −±75 mA
storage temperature range −65 +150 °C
power dissipation per package for temperature range: −40 to +125 °C; note 2 − 500 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.
1999 Sep 28 5
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