Philips 74ahc ahct244 DATASHEETS

INTEGRATED CIRCUITS

DATA SH EET

74AHC244; 74AHCT244

Octal buffer/line driver; 3-state

Product speciﬁcation Supersedes data of 1999 Feb 24 File under Integrated Circuits, IC06

1999 Sep 28

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC244; 74AHCT244

FEATURES

• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V

• Balanced propagation delays

• All inputs have a Schmitt-trigger

action

• Inputsacceptsvoltageshigherthan V

CC

• For AHC only: operates with CMOS input levels

• For AHCT only: operates with TTL input levels

• Specified from

−40 to +85 and +125 °C.

DESCRIPTION

The 74AHC/AHCT244 is a high-speed Si-gate CMOS device.

The 74AHC/AHCT244 is an octal non-inverting buffer/line driver with 3-state outputs.

The 3-state outputs are controlled by the outputs enable inputs 1OE and 2OE.

AHIGHon nOE causes theoutputsto assume a high-impedanceOFF state.

FUNCTION TABLE

See note 1.

INPUTS OUTPUT

OE nA

n

LLL LHH

HXZ

Note

1. H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF state.

QUICK REFERENCE DATA

GND = 0 V; T

=25°C; tr=tf≤3.0 ns.

amb

SYMBOL PARAMETER CONDITIONS

t

PHL/tPLH

C

I

C

O

C

PD

propagation delay 1Anto 1Yn; 2Anto 2Y

n

input capacitance VI=VCCor GND 3.5 3.5 pF output capacitance 4.0 4.0 pF power dissipation

capacitance

CL=15pF; VCC=5V

CL=50pF; f = 1 MHz; notes 1 and 2

Notes

1. C

is used to determine the dynamic power dissipation (PDin µW).

PD

PD=CPD× V

2

× fi+ ∑ (CL× V

CC

2

× fo) where:

CC

fi= input frequency in MHz; fo= output frequency in MHz; ∑ (CL× V

2

× fo) = sum of outputs;

CC

CL= output load capacitance in pF; VCC= supply voltage in Volts.

2. The condition is VI= GND to VCC.

nY

n

TYPICAL

AHC AHCT

3.5 5.0 ns

10 12 pF

UNIT

1999 Sep 28 2

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC244; 74AHCT244

PINNING

PIN SYMBOL DESCRIPTION

11 2, 4, 6 and 8 1A 3, 5, 7 and 9 2Y 10 GND ground (0 V) 11, 13, 15 and 17 2A 12, 14, 16 and 18 1Y 19 2 20 V

ORDERING INFORMATION

OE output enable input (active LOW)

to 1A

0

to 2Y

0

to 2A

3

to 1Y

3

3 3

0 0

data inputs bus outputs

data inputs data outputs

OE output enable input (active LOW)

CC

DC supply voltage

OUTSIDE NORTH

AMERICA

NORTH AMERICA

PINS PACKAGE MATERIAL CODE

PACKAGES

74AHC244D 74AHC244D 20 SO plastic SOT163-1 74AHC244PW 74AHC244PW DH 20 TSSOP plastic SOT360-1 74AHCT244D 74AHCT244D 20 SO plastic SOT163-1 74AHCT244PW 7AHCT244PW DH 20 TSSOP plastic SOT360-1

1999 Sep 28 3

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC244; 74AHCT244

handbook, halfpage

1OE

1A 2Y

1A 2Y 1A 2Y 1A 2Y

GND

1 2

0

3

0

4

1

5

1 2 2 3 3

244

6 7 8 9

10

20 19 18 17 16 15 14 13 12 11

MNA162

Fig.1 Pin configuration.

handbook, halfpage

V

CC

2OE 1Y 2A 1Y 2A 1Y 2A 1Y 2A

0 0 1 1 2 2 3 3

1A

0

2

1Y

0

18

handbook, halfpage

1

EN

2 4

6 8

19

EN

11 13

15 17

MNA169

18 16

14 12

9 7

5 3

Fig.2 IEEE/IEC logic symbol.

1A

1

4

1A

2

6

1A

3

8

1OE

1

2A

2OE

0

1

2

3

17

15

13

11

19

Fig.3 Logic diagram.

1Y

1

1Y

2

1Y

3

2Y

0

2Y

1

2Y

2

2Y

3

MNA170

16

14

12

3

5

7

9

1999 Sep 28 4

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC244; 74AHCT244

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER CONDITIONS

UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

74AHC 74AHCT

V

CC

V

I

V

O

T

amb

DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 − 5.5 0 − 5.5 V output voltage 0 − V operating ambient temperature

range

see DC and AC characteristics per

−40 +25 +85 −40 +25 +85 °C

−40 +25 +125 −40 +25 +125 °C

0 − V

CC

V

device

t

(∆t/∆f) input rise and fall rates VCC= 3.3 V ±0.3 V −−100 −−−ns/V

r,tf

=5V±0.5 V −−20 −−20

V

CC

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

V

I

IK

I

OK

I

O

I

CC

T

stg

P

D

DC supply voltage −0.5 +7.0 V input voltage range −0.5 +7.0 V DC input diode current VI< −0.5 V; note 1 −−20 mA DC output diode current VO< −0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA DC output source or sink current −0.5V<VO<VCC+ 0.5 V −±25 mA DC VCC or GND current −±75 mA storage temperature range −65 +150 °C power dissipation per package for temperature range: −40 to +125 °C; note 2 − 500 mW

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. For SO packages: above 70 °C the value of P

derates linearly with 8 mW/K.

D

For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.

1999 Sep 28 5