Philips 74ahc ahct125 DATASHEETS
INTEGRATED CIRCUITS
DATA SH EET
74AHC125; 74AHCT125
Quad buffer/line driver; 3-state
Product specification
Supersedes data of 1999 Jan 11
File under Integrated Circuits, IC06
1999 Sep 27
Philips Semiconductors Product specification
Quad buffer/line driver; 3-state 74AHC125; 74AHCT125
FEATURES
• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
• Balanced propagation delays
• All inputs have Schmitt-trigger
actions
• Inputsacceptsvoltageshigherthan
V
CC
• For AHC only:
operates with CMOS input levels
• For AHCT only:
operates with TTL input levels
• Specified from
−40 to +85 and +125 °C.
DESCRIPTION
The 74AHC/AHCT125 are
high-speed Si-gate CMOS devices
and are pin compatible with low
power Schottky TTL (LSTTL). They
are specified in compliance with
JEDEC standard No. 7A.
The 74AHC/AHCT125 are four
non-inverting buffer/line drivers with
3-state outputs. The 3-state outputs
(nY) are controlled by the output
enable input (nOE). A HIGH at n
causes the outputs to assume a
HIGH-impedance OFF-state.
The ‘125’ is identical to the ‘126’ but
has active LOW enable inputs.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
O
C
PD
propagation delay
nA to nY
input capacitance VI=VCCor GND 3.0 3.0 pF
output capacitance 4.0 4.0 pF
power dissipation
capacitance
CL= 15 pF;
VCC=5V
CL= 50 pF;
f = 1 MHz;
notes 1 and 2
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
∑ (CL× V
2
× fo) = sum of outputs;
CC
CL= output load capacitance in pF;
VCC= supply voltage in Volts.
2. The condition is VI= GND to VCC.
FUNCTION TABLE
See note 1.
INPUT OUTPUT
n
OE nA nY
LLL
LHH
HXZ
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
TYPICAL
UNIT
AHC AHCT
3.0 3.0 ns
10 12 pF
1999 Sep 27 2
Philips Semiconductors Product specification
Quad buffer/line driver; 3-state 74AHC125; 74AHCT125
ORDERING INFORMATION
OUTSIDE NORTH
AMERICA
74AHC125D 74AHC125D 14 SO plastic SOT108-1
74AHC125PW 74AHC125PW DH 14 TSSOP plastic SOT402-1
74AHCT125D 74AHCT125D 14 SO plastic SOT108-1
74AHCT125PW 7AHCT125PW DH 14 TSSOP plastic SOT402-1
PINNING
PIN SYMBOL DESCRIPTION
1, 4, 10 and 13 1
2, 5, 9 and 12 1A to 4A data inputs
3, 6, 8 and 11 1Y to 4A data outputs
7 GND ground (0 V)
14 V
NORTH AMERICA
OE to 4OE output enable inputs (active LOW)
CC
PINS PACKAGE MATERIAL CODE
DC supply voltage
PACKAGES
1999 Sep 27 3
Philips Semiconductors Product specification
Quad buffer/line driver; 3-state 74AHC125; 74AHCT125
1OE
1
1A
2
3
1Y
4
2OE
2A
2Y
GND
125
5
6
7
MNA226
Fig.1 Pin configuration.
V
14
CC
13
4OE
12
4A
11
4Y
10
3OE
9
3A
8
3Y
handbook, halfpage
nOE
nA
nY
MNA227
Fig.2 Logic diagram.
handbook, halfpage
2
1
5
4
9
10
12
13
1A 1Y
1OE
2A 2Y
2OE
3A 3Y
3OE
4A 4Y
4OE
MNA228
3
6
8
11
Fig.3 Functional diagram.
1999 Sep 27 4
handbook, halfpage
2
1
5
4
9
10
12
13
EN1
1
MNA229
3
6
8
11
Fig.4 IEC logic symbol.
Philips Semiconductors Product specification
Quad buffer/line driver; 3-state 74AHC125; 74AHCT125
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74AHC 74AHCT
V
CC
V
I
V
O
T
amb
DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V
input voltage 0 − 5.5 0 − 5.5 V
output voltage 0 − V
operating ambient temperature
range
see DC and AC
characteristics per
−40 +25 +85 −40 +25 +85 °C
−40 +25 +125 −40 +25 +125 °C
0 − V
CC
CC
V
device
t
(∆t/∆f) input rise and fall rates VCC= 3.3 V ±0.3 V −−100 −−−ns/V
r,tf
=5V±0.5 V −−20 −−20
V
CC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage −0.5 +7.0 V
input voltage range −0.5 +7.0 V
DC input diode current VI< −0.5 V; note 1 −−20 mA
DC output diode current VO< −0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA
DC output source or sink current −0.5V<VO<VCC+ 0.5 V −±25 mA
DC VCC or GND current −±75 mA
storage temperature range −65 +150 °C
power dissipation per package for temperature range: −40 to +125 °C; note 2 − 500 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.
1999 Sep 27 5
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