Philips 74ahc ahct08 DATASHEETS

INTEGRATED CIRCUITS
DATA SH EET
74AHC08; 74AHCT08
Quad 2-input AND gate
Product specification Supersedes data of 1998 Dec 18 File under Integrated Circuits, IC06
1999 Sep 24
Philips Semiconductors Product specification
Quad 2-input AND gate 74AHC08; 74AHCT08

FEATURES

ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V
Balanced propagation delays
All inputs have Schmitt-trigger
actions
Inputsacceptsvoltageshigherthan V
CC
For AHC only: operates with CMOS input levels
For AHCT only: operates with TTL input levels
Specified from
40 to +85 and +125 °C.

DESCRIPTION

The 74AHC/AHCT08 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A.
The 74AHC/AHCT08 provide the 2-input AND function.

FUNCTION TABLE

See note 1.

QUICK REFERENCE DATA

GND = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
TYPICAL
SYMBOL PARAMETER CONDITIONS
AHC AHCT
t
PHL/tPLH
C
I
C
O
C
PD
propagation delay nA, nB to nY
input capacitance VI=VCCor GND 3.0 3.0 pF output capacitance 4.0 4.0 pF power dissipation
capacitance
CL= 15 pF; VCC=5V
CL= 50 pF; f = 1 MHz;
3.5 5.0 ns
10 12 pF
notes 1 and 2
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz; fo= output frequency in MHz; (CV
2
× fo) = sum of outputs;
CC
CL= output load capacitance in pF; VCC= supply voltage in Volts.
2. The condition is VI= GND to VCC.

PINNING

PIN SYMBOL DESCRIPTION
1, 4, 9 and 12 1A to 4A data inputs 2, 5, 10 and 13 1B to 4B data inputs 3, 6, 8 and 11 1Y to 4Y data outputs 7 GND ground (0 V) 14 V
CC
DC supply voltage
UNIT
INPUT OUTPUT
nA nB nY
LLL
LHL HLL HHH
Note
1. H = HIGH voltage level; L = LOW voltage level.
Philips Semiconductors Product specification
Quad 2-input AND gate 74AHC08; 74AHCT08

ORDERING INFORMATION

OUTSIDE NORTH
AMERICA
NORTH AMERICA
PINS PACKAGE MATERIAL CODE
PACKAGES
74AHC08D 74AHC08D 14 SO plastic SOT108-1 74AHC08PW 74AHC08PW DH 14 TSSOP plastic SOT402-1 74AHCT08D 74AHCT08D 14 SO plastic SOT108-1 74AHCT08PW 74AHCT08PW DH 14 TSSOP plastic SOT402-1
handbook, halfpage
1A 1B 1Y 2A 2B 2Y
GND
1 2 3 4
08
5 6 7
MNA220
V
14
CC
13
4B
12
4A
11
4Y
10
3B
9
3A
8
3Y
handbook, halfpage
A
B
Y
MNA221
handbook, halfpage
Fig.1 Pin configuration.
1
1A
2
1B
4
2A
5
2B
9
3A
10
3B
12
4A
13
4B
1Y
2Y
3Y
4Y
MNA222
3
6
8
11
Fig.3 Functional diagram.
handbook, halfpage
Fig.2 Logic diagram (one gate).
1 2
4 5
9
10
12 13
&
&
&
&
MNA223
3
6
8
11
Fig.4 IEC logic symbol.
Philips Semiconductors Product specification
Quad 2-input AND gate 74AHC08; 74AHCT08

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74AHC 74AHCT
V
CC
V
I
V
O
T
amb
DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 5.5 0 5.5 V output voltage 0 V operating ambient temperature
range
see DC and AC characteristics per
40 +25 +85 40 +25 +85 °C
40 +25 +125 40 +25 +125 °C
0 V
CC
CC
V
device
t
(t/f) input rise and fall rates VCC= 3.3 V ±0.3 V −−100 −−−ns/V
r,tf
=5V±0.5 V −−20 −−20
V
CC

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage 0.5 +7.0 V input voltage range 0.5 +7.0 V DC input diode current VI< 0.5 V; note 1 −−20 mA DC output diode current VO< 0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA DC output source or sink current 0.5V<VO<VCC+ 0.5 V −±25 mA DC VCC or GND current −±75 mA storage temperature range 65 +150 °C power dissipation per package for temperature range:40 to +125 °C; note 2 500 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.
Philips Semiconductors Product specification
Quad 2-input AND gate 74AHC08; 74AHCT08
DC CHARACTERISTICS 74AHC family
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
SYMBOL PARAMETER
V
IH
HIGH-level input voltage
V
IL
LOW-level input voltage
V
OH
HIGH-level output voltage; all outputs
HIGH-level output voltage
V
OL
LOW-level output voltage; all outputs
LOW-level output voltage
I
I
input leakage current
I
OZ
3-state output OFF current
I
CC
quiescent supply current
C
I
input capacitance −−310−10 10 pF
TEST CONDITIONS T
25 40 to +85 40 to +125
amb
(°C)
UNIT
OTHER VCC(V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
2.0 1.5 −−1.5 1.5 V
3.0 2.1 −−2.1 2.1
5.5 3.85 −−3.85 3.85
2.0 −− 0.5 0.5 0.5 V
3.0 −− 0.9 0.9 0.9
5.5 −− 1.65 1.65 1.65
VI=VIHor VIL; IO= 50 µA
2.0 1.9 2.0 1.9 1.9 V
3.0 2.9 3.0 2.9 2.9
4.5 4.4 4.5 4.4 4.4
V
I=VIH
or VIL;
3.0 2.58 −−2.48 2.40 V
IO= 4.0 mA V
I=VIH
or VIL;
4.5 3.94 −−3.8 3.70
IO= 8.0 mA VI=VIHor VIL;
IO=50µA
2.0 0 0.1 0.1 0.1 V
3.0 0 0.1 0.1 0.1
4.5 0 0.1 0.1 0.1
V
I=VIH
or VIL;
3.0 −− 0.36 0.44 0.55 V
IO=4mA V
I=VIH
or VIL;
4.5 −− 0.36 0.44 0.55
IO=8mA VI=VCCor GND 5.5 −− 0.1 1.0 2.0 µA
VI=VIHor VIL;
5.5 −− ±0.25 −±2.5 −±10.0 µA
VO=VCCor GND VI=VCCor GND;
5.5 −− 2.0 20 40 µA
IO=0
Loading...
+ 11 hidden pages