Philips 74AHC541PW, 74AHCT541PW, 74AHCT541DB, 74AHCT541D, 74AHC541DB Datasheet
DATA SH EET
Product specification
Supersedes data of 1998 Sep 21
File under Integrated Circuits, IC06
1999 Nov 24
INTEGRATED CIRCUITS
74AHC541; 74AHCT541
Octal buffer/line driver; 3-state
1999 Nov 24 2
Philips Semiconductors Product specification
Octal buffer/line driver; 3-state 74AHC541; 74AHCT541
FEATURES
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V
• Balanced propagation delays
• All inputs have a Schmitt-trigger action
• Inputs accepts voltages higher than V
CC
• For AHC only: operates with CMOS input levels
• For AHCT only: operates with TTL input levels
• Specified from −40 to +85 °C and −40 to +125 °C.
DESCRIPTION
The 74AHC/AHCT541 is a high-speed Si-gate CMOS
device.
The 74AHC/AHCT541 are octal non-inverting buffer/line
drivers with 3-state bus compatible outputs.
The 3-state outputs are controlled by the output enable
inputs OE0 and OE1.
A HIGH on OEn causes the outputs to assume a
high-impedance OFF-state.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
=25°C; tr=tf≤3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (PDin µW).
PD=CPD× V
CC
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
f
i
= input frequency in MHz;
fo= output frequency in MHz;
∑ (CL× V
CC
2
× fo) = sum of outputs;
CL= output load capacitance in pF;
VCC= supply voltage in Volts.
2. The condition is VI= GND to VCC.
SYMBOL PARAMETER CONDITIONS
TYPICAL
UNIT
AHC AHCT
t
PHL/tPLH
propagation delay Anto Y
n
CL= 15 pF; VCC= 5 V 3.5 3.5 ns
C
I
input capacitance VI=VCC or GND 3 3 pF
C
O
output capacitance 4.0 4.0 pF
C
PD
power dissipation capacitance CL= 50 pF; f = 1 MHz;
notes 1 and 2
10 12 pF
1999 Nov 24 3
Philips Semiconductors Product specification
Octal buffer/line driver; 3-state 74AHC541; 74AHCT541
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
ORDERING INFORMATION
PINNING
INPUT OUTPUT
OE
0
OE
1
A
n
Y
n
LLLL
LLHH
XHXZ
HXXZ
OUTSIDE NORTH
AMERICA
NORTH AMERICA
PACKAGES
PINS PACKAGE MATERIAL CODE
74AHC541D 74AHC541D 20 SO plastic SOT163-1
74AHC541PW 74AHC541PW DH 20 TSSOP plastic SOT360-1
74AHCT541D 74AHCT541D 20 SO plastic SOT163-1
74AHCT541PW 7AHCT541PW DH 20 TSSOP plastic SOT360-1
PIN SYMBOL DESCRIPTION
1
OE
0
output enable input
2, 3, 4, 5, 6, 7, 8 and 9 A
0
to A
7
data inputs
10 GND ground (0 V)
11, 12, 13, 14, 15, 16, 17 and 18 Y
7
to Y
0
data inputs/outputs
19
OE
1
output enable input
20 V
CC
DC supply voltage
1999 Nov 24 4
Philips Semiconductors Product specification
Octal buffer/line driver; 3-state 74AHC541; 74AHCT541
Fig.1 Pin configuration.
handbook, halfpage
OE
0
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
GND
V
CC
OE
1
Y
0
Y
1
Y
3
Y
4
Y
2
Y
5
Y
6
Y
7
1
2
3
4
5
6
7
8
9
10
11
12
20
19
18
17
16
15
14
13
541
MNA178
Fig.2 Logic symbol.
handbook, halfpage
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
1
19
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
OE
0
OE
1
MNA179
Fig.3 IEEE/IEC logic symbol.
handbook, halfpage
MNA180
9
11
12
13
14
15
16
2
3
4
5
6
7
8
18
17
19
1
&
EN
1999 Nov 24 5
Philips Semiconductors Product specification
Octal buffer/line driver; 3-state 74AHC541; 74AHCT541
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground=0V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO-package: above 70 °C the value of P
D
derates linearly with 8 mW/K.
For TSSOP-package: above 60 °C the value of PDderates linearly with 5.5 mW/K.
SYMBOL PARAMETER CONDITIONS
74AHC 74AHCT
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
V
CC
DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V
V
I
input voltage 0 − 5.5 0 − 5.5 V
V
O
output voltage 0 − V
CC
0 − V
CC
V
T
amb
operating ambient temperature see DC and AC
characteristics per
device
−40 +25 +85 −40 +25 +85 °C
−40 +25 +125 −40 +25 +125 °C
t
r,tf
(∆t/∆f) input rise and fall times VCC= 3.3 ±0.3 V −−100 −−−ns/V
V
CC
=5±0.5 V −−20 −−20
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
DC supply voltage −0.5 +7.0 V
V
I
input voltage −0.5 +7.0 V
I
IK
DC input diode current VI<−0.5 V; note 1 −−20 mA
I
OK
DC output diode current VO<−0.5 Vor VO> VCC+ 0.5 V; note 1 −±20 mA
I
O
DC output source or sink current −0.5 V < VO< VCC+ 0.5 V −±25 mA
I
CC
DC VCC or GND current −±75 mA
T
stg
storage temperature −65 +150 °C
P
D
power dissipation per package for temperature range: −40 to +125 °C; note 2 − 500 mW
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