INTEGRATED CIRCUITS
DATA SHEET
74AHC541; 74AHCT541
Octal buffer/line driver; 3-state
Product specification |
1999 Nov 24 |
Supersedes data of 1998 Sep 21
File under Integrated Circuits, IC06
Philips Semiconductors |
Product specification |
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Octal buffer/line driver; 3-state |
74AHC541; 74AHCT541 |
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FEATURES
·ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V
·Balanced propagation delays
·All inputs have a Schmitt-trigger action
·Inputs accepts voltages higher than VCC
·For AHC only: operates with CMOS input levels
·For AHCT only: operates with TTL input levels
·Specified from -40 to +85 °C and -40 to +125 °C.
QUICK REFERENCE DATA
Ground = 0 V; Tamb = 25 °C; tr = tf £ 3.0 ns.
DESCRIPTION
The 74AHC/AHCT541 is a high-speed Si-gate CMOS device.
The 74AHC/AHCT541 are octal non-inverting buffer/line drivers with 3-state bus compatible outputs.
The 3-state outputs are controlled by the output enable inputs OE0 and OE1.
A HIGH on OEn causes the outputs to assume a high-impedance OFF-state.
SYMBOL |
PARAMETER |
CONDITIONS |
TYPICAL |
UNIT |
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AHC |
AHCT |
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tPHL/tPLH |
propagation delay An to Yn |
CL = 15 pF; VCC = 5 V |
3.5 |
3.5 |
ns |
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CI |
input capacitance |
VI = VCC or GND |
3 |
3 |
pF |
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CO |
output capacitance |
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4.0 |
4.0 |
pF |
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CPD |
power dissipation capacitance |
CL = 50 pF; f = 1 MHz; |
10 |
12 |
pF |
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notes 1 and 2 |
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Notes
1.CPD is used to determine the dynamic power dissipation (PD in mW). PD = CPD ´ VCC2 ´ fi + å (CL ´ VCC2 ´ fo) where:
fi = input frequency in MHz; fo = output frequency in MHz;
å (CL ´ VCC2 ´ fo) = sum of outputs;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
1999 Nov 24 |
2 |
Philips Semiconductors |
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Product specification |
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Octal buffer/line driver; 3-state |
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74AHC541; 74AHCT541 |
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FUNCTION TABLE |
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See note 1. |
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INPUT |
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OUTPUT |
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0 |
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1 |
An |
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Yn |
OE |
OE |
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L |
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L |
L |
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L |
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L |
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H |
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H |
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X |
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H |
X |
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Z |
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H |
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X |
X |
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Z |
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Note
1.H = HIGH voltage level; L = LOW voltage level; X = don’t care;
Z = high-impedance OFF-state.
ORDERING INFORMATION
OUTSIDE NORTH |
NORTH AMERICA |
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PACKAGES |
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AMERICA |
PINS |
PACKAGE |
MATERIAL |
CODE |
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74AHC541D |
74AHC541D |
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SO |
plastic |
SOT163-1 |
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74AHC541PW |
74AHC541PW DH |
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TSSOP |
plastic |
SOT360-1 |
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74AHCT541D |
74AHCT541D |
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SO |
plastic |
SOT163-1 |
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74AHCT541PW |
7AHCT541PW DH |
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TSSOP |
plastic |
SOT360-1 |
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PINNING
PIN |
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SYMBOL |
DESCRIPTION |
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1 |
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0 |
output enable input |
OE |
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2, 3, 4, 5, 6, 7, 8 and 9 |
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A0 to A7 |
data inputs |
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10 |
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GND |
ground (0 V) |
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11, 12, 13, 14, 15, 16, 17 and 18 |
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Y7 to Y0 |
data inputs/outputs |
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19 |
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1 |
output enable input |
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OE |
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20 |
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VCC |
DC supply voltage |
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1999 Nov 24 |
3 |
Philips Semiconductors |
Product specification |
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Octal buffer/line driver; 3-state |
74AHC541; 74AHCT541 |
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VCC |
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OE0 |
1 |
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20 |
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A0 |
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OE1 |
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A1 |
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Y0 |
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3 |
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Y1 |
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A2 |
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A3 |
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Y2 |
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5 |
541 |
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A4 |
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Y3 |
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6 |
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15 |
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A5 |
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Y4 |
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14 |
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A6 |
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Y5 |
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13 |
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A7 |
9 |
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Y6 |
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12 |
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GND 10 |
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Y7 |
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11 |
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MNA178 |
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Fig.1 Pin configuration.
handbook, halfpage |
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A0 |
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Y0 |
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2 |
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Y1 |
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3 |
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A1 |
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handbook, halfpage |
1 |
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& |
EN |
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A2 |
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Y2 |
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4 |
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16 |
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A3 |
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Y3 |
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2 |
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5 |
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3 |
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A4 |
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Y4 |
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4 |
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16 |
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14 |
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A |
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Y |
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6 |
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A6 |
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Y6 |
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9 |
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11 |
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A7 |
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Y7 |
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MNA180 |
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1 |
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OE0 |
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OE1 |
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Fig.2 Logic symbol. |
Fig.3 IEEE/IEC logic symbol. |
1999 Nov 24 |
4 |
Philips Semiconductors |
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Product specification |
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Octal buffer/line driver; 3-state |
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74AHC541; 74AHCT541 |
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RECOMMENDED OPERATING CONDITIONS |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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74AHC |
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74AHCT |
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UNIT |
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MIN. |
TYP. |
MAX. |
MIN. |
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TYP. |
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MAX. |
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VCC |
DC supply voltage |
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2.0 |
5.0 |
5.5 |
4.5 |
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5.0 |
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5.5 |
V |
VI |
input voltage |
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0 |
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5.5 |
0 |
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5.5 |
V |
VO |
output voltage |
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0 |
− |
VCC |
0 |
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VCC |
V |
Tamb |
operating ambient temperature |
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see DC and AC |
−40 |
+25 |
+85 |
−40 |
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+25 |
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+85 |
°C |
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characteristics per |
−40 |
+25 |
+125 |
−40 |
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+25 |
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+125 |
°C |
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device |
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tr,tf ( t/ f) |
input rise and fall times |
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VCC = 3.3 ±0.3 V |
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100 |
− |
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ns/V |
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VCC = 5 ±0.5 V |
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20 |
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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCC |
DC supply voltage |
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−0.5 |
+7.0 |
V |
VI |
input voltage |
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−0.5 |
+7.0 |
V |
IIK |
DC input diode current |
VI < −0.5 V; note 1 |
− |
−20 |
mA |
IOK |
DC output diode current |
VO < −0.5 V or VO > VCC + 0.5 V; note 1 |
− |
±20 |
mA |
IO |
DC output source or sink current |
−0.5 V < VO < VCC + 0.5 V |
− |
±25 |
mA |
ICC |
DC VCC or GND current |
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− |
±75 |
mA |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
PD |
power dissipation per package |
for temperature range: −40 to +125 °C; note 2 |
− |
500 |
mW |
Notes
1.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2.For SO-package: above 70 °C the value of PD derates linearly with 8 mW/K.
For TSSOP-package: above 60 °C the value of PD derates linearly with 5.5 mW/K.
1999 Nov 24 |
5 |
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