Philips 74AHC2G32, 74AHCT2G32 Technical data

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74AHC2G32; 74AHCT2G32

Dual 2-input OR gate

Rev. 01 — 23 February 2004 Product data sheet

1. General description

The 74AHC2G/AHCT2G32 is a high-speed Si-gate CMOS device. This device provides
two 2-input OR gates.

2. Features

■ Symmetrical output impedance

■ High noise immunity

■ ESD protection:

◆ HBM EIA/JESD22-A114-A exceeds 2000 V

◆ MM EIA/JESD22-A115-A exceeds 200 V

◆ CDM EIA/JESD22-C101 exceeds 1000 V.

■ Low power dissipation

■ Balanced propagation delays

■ SOT505-2 and SOT765-1 package

■ Specified from −40 °Cto+85°C and −40 °C to +125 °C.

3. Quick reference data

Table 1: Quick reference data

GND = 0 V; T

Symbol Parameter Conditions Min Typ Max Unit

Type 74AHC2G

, t

t

PHL

C

I

C

PD

Type 74AHCT2G

, t

t

PHL

C

I

C

PD

[1] CPDis used to determine the dynamic power dissipation (PDin µW).

PD=CPD× V
fi= input frequency in MHz;
fo= output frequency in MHz;

amb

PLH

PLH

=25°C; tr=t

propagation delay
nA and nB to nY

≤

3.0 ns.

f

CL=15pF;
V

CC

- 3.2 5.5 ns

=5V
input capacitance - 1.5 10 pF
power dissipation

capacitance

propagation delay
nA and nB to nY

CL=50pF;
f

= 1 MHz

i

CL=15pF;
V

=5V

CC

[1] [2]

-16-pF

- 3.3 6.9 ns

input capacitance - 1.5 10 pF
power dissipation

capacitance

2

× fi× N+Σ(CL× V

CC

CL=50pF;
f

= 1 MHz

i

2

× fo) where:

CC

[1] [2]

-17-pF

Philips Semiconductors

74AHC2G32; 74AHCT2G32

Dual 2-input OR gate

CL= output load capacitance in pF;
VCC= supply voltage in Volts;
N = total load switching outputs;
Σ(CL× V

[2] The condition is VI= GND to VCC.

2

× fo) = sum of the outputs.

CC

4. Ordering information

Table 2: Ordering information

Type number Package

Temperature range Name Description Version

74AHC2G32DP −40 °C to +125 °C TSSOP8 plastic thin shrink small outline package; 8 leads;

body width 3 mm; lead length 0.5 mm

74AHCT2G32DP −40 °C to +125 °C TSSOP8 plastic thin shrink small outline package; 8 leads;

body width 3 mm; lead length 0.5 mm

74AHC2G32DC −40 °C to +125 °C VSSOP8 plastic very shrink small outline package; 8 leads;

body width 2.3 mm

74AHCT2G32DC −40 °C to +125 °C VSSOP8 plastic very shrink small outline package; 8 leads;

body width 2.3 mm

SOT505-2

SOT505-2

SOT765-1

SOT765-1

5. Marking

Table 3: Marking

Type number Marking code

74AHC2G32DP A32
74AHCT2G32DP C32
74AHC2G32DC A32
74AHCT2G32DC C32

6. Functional diagram

Fig 1. Functional diagram. Fig 2. IEC logic symbol.

1

1A

1

1B

2

2A

5

2B

6

1Y

2Y

mna733

7

3

2

5
6

≥ 1

≥ 1

mna734

7

3

9397 750 12532 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 23 February 2004 2 of 16

Philips Semiconductors

Fig 3. Logic diagram (logic driver).

7. Pinning information

7.1 Pinning

74AHC2G32; 74AHCT2G32

Dual 2-input OR gate

B

Y

A

1A

1

1B 1Y

2

2Y 2B

3

GND 2A

4

32

mna732

mna166

V

8

CC

7
6
5

Fig 4. Pin configuration.

7.2 Pin description

Table 4: Pin description

Pin Symbol Description

1 1A data input
2 1B data input
3 2Y data output
4 GND ground (0 V)
5 2A data input
6 2B data input
7 1Y data output
8V

CC

supply voltage

9397 750 12532 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 23 February 2004 3 of 16

Philips Semiconductors

8. Functional description

8.1 Function table

74AHC2G32; 74AHCT2G32

Dual 2-input OR gate

Table 5: Function table

Input Output
nA nB nY

LLL
LHH
HLH
HHH

[1] H = HIGH voltage level;

L = LOW voltage level.

9. Limiting values

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).

Symbol Parameter Conditions Min Max Unit

V

CC

V

I

I

IK

I

OK

I

O

, I

I

CC

T

stg

P

tot

GND

[1]

supply voltage −0.5 +7.0 V
input voltage −0.5 +7.0 V
input diode current VI< −0.5 V - −20 mA
output diode

VO< −0.5 V or VO>VCC+ 0.5 V

[1]

- ±20 mA

current
output source or

VO> −0.5 V or VO<VCC+ 0.5 V - ±25 mA

sink current
VCCor GND

- ±75 mA

current
storage

−65 +150 °C

temperature
power dissipation T

=−40 °C to +125 °C - 250 mW

amb

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

10. Recommended operating conditions

Table 7: Recommended operating operations

Symbol Parameter Conditions Min Typ Max Unit

Type 74AHC2G

V

CC

V

I

V

O

T

amb

9397 750 12532 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 23 February 2004 4 of 16

supply voltage 2.0 5.0 5.5 V
input voltage 0 - 5.5 V
output voltage 0 - V
operating ambient

temperature

see Section 11 and Section 12
per device

−40 +25 +125 °C

CC

V

Philips Semiconductors

74AHC2G32; 74AHCT2G32

Dual 2-input OR gate

Table 7: Recommended operating operations

…continued

Symbol Parameter Conditions Min Typ Max Unit

tr,t

f

input rise and fall
times

VCC= 3.3 V ± 0.3 V - - 100 ns/V

=5V± 0.5 V - - 20 ns/V

V

CC

Type 74AHCT2G

V
V
V
T

t

CC
I
O
amb

r,tf

supply voltage 4.5 5.0 5.5 V
input voltage 0 - 5.5 V
output voltage 0 - V
operating ambient

temperature
input rise and fall

see Section 11 and Section 12

−40 +25 +125 °C

per device
VCC=5V± 0.5 V - - 20 ns/V

CC

V

times

11. Static characteristics

Table 8: Static characteristics type 74AHC2G32

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Typ Max Unit

=25°C

T

amb

V

IH

HIGH-level input
voltage

V

IL

LOW-level input
voltage

V

OH

HIGH-level output
voltage

V

OL

LOW-level output
voltage

I

LI

I

CC

input leakage current VI=VCCor GND; VCC= 5.5 V - - 0.1 µA
quiescent supply

current

C

I

input capacitance - 1.5 10 pF

VCC= 2.0 V 1.5 - - V

= 3.0 V 2.1 - - V

V

CC

= 5.5 V 3.85 - - V

V

CC

VCC= 2.0 V - - 0.5 V

= 3.0 V - - 0.9 V

V

CC

= 5.5 V - - 1.65 V

V

CC

VI=VIHor V

IL

IO= −50 µA; VCC= 2.0 V 1.9 2.0 - V

= −50 µA; VCC= 3.0 V 2.9 3.0 - V

I

O

= −50 µA; VCC= 4.5 V 4.4 4.5 - V

I

O

= −4.0 mA; VCC= 3.0 V 2.58 - - V

I

O

= −8.0 mA; VCC= 4.5 V 3.94 - - V

I

O

VI=VIHor V

IL

IO=50µA; VCC= 2.0 V - 0 0.1 V

=50µA; VCC= 3.0 V - 0 0.1 V

I

O

=50µA; VCC= 4.5 V - 0 0.1 V

I

O

= 4.0 mA; VCC= 3.0 V - - 0.36 V

I

O

= 8.0 mA; VCC= 4.5 V - - 0.36 V

I

O

VI=VCCor GND; IO=0A;
V

= 5.5 V

CC

- - 1.0 µA

9397 750 12532 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 01 — 23 February 2004 5 of 16