Philips 74AHCT245PW, 74AHCT245DB, 74AHCT245D, 74AHC245PW, 74AHC245DB Datasheet

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DATA SH EET
Product specification Supersedes data of 1998 Sep 21 File under Integrated Circuits, IC06
1999 Sep 28
INTEGRATED CIRCUITS
74AHC245; 74AHCT245
1999 Sep 28 2
Philips Semiconductors Product specification
Octal bus transceiver; 3-state 74AHC245; 74AHCT245
FEATURES
ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V
Balanced propagation delays
All inputs have a Schmitt-trigger
action
Inputsacceptsvoltageshigherthan V
CC
For AHC only: operates with CMOS input levels
For AHCT only: operates with TTL input levels
Specified from
40 to +85 and +125 °C.
DESCRIPTION
The 74AHC/AHCT245 is a high-speed Si-gate CMOS device.
The 74AHC/AHCT245 is an octal transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions.
The74AHC245/74AHCT245features an Output Enable (OE) input for easy cascading and a send/receive (DIR) input for direction control.
OE controls the outputs so that the buses are effectively isolated.
FUNCTION TABLE
See Note 1.
Note
1. H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
QUICK REFERENCE DATA
GND = 0 V; T
amb
=25°C; tr=tf≤3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (PDin µW).
PD=CPD× V
CC
2
× fi+ (CL× V
CC
2
× fo) where: fi= input frequency in MHz; fo= output frequency in MHz; (CV
CC
2
× fo) = sum of outputs; CL= output load capacitance in pF; VCC= supply voltage in Volts.
2. The condition is VI= GND to VCC.
INPUTS INPUTS/OUTPUTS
OE DIR A
n
B
n
L L A = B inputs L H inputs B = A
HXZZ
SYMBOL PARAMETER CONDITIONS
TYPICAL
UNIT
AHC AHCT
t
PHL/tPLH
propagation delay CL=15pF;
VCC=5V
3.5 5.0 ns
A
n
to Bn, Bnto A
n
C
I
input capacitance VI=VCCor GND 3.5 3.5 pF
C
O
output capacitance
4.0 4.0 pF
C
PD
power dissipation capacitance
CL=50pF; f = 1 MHz; notes 1 and 2
12 15 pF
1999 Sep 28 3
Philips Semiconductors Product specification
Octal bus transceiver; 3-state 74AHC245; 74AHCT245
ORDERING INFORMATION
PINNING
OUTSIDE NORTH
AMERICA
NORTH AMERICA
PACKAGES
PINS PACKAGE MATERIAL CODE
74AHC245D 74AHC245D 20 SO plastic SOT163-1 74AHC245PW 74AHC245PW DH 20 TSSOP plastic SOT360-1 74AHCT245D 74AHCT245D 20 SO plastic SOT163-1 74AHCT245PW 7AHCT245PW DH 20 TSSOP plastic SOT360-1
PIN SYMBOL DESCRIPTION
1 DIR direction control 2to9 A
0
to A
7
data inputs/outputs 10 GND ground (0 V) 11 to 18 B
7
to B
0
data inputs/outputs 19
OE output enable input (active LOW)
20 V
CC
DC supply voltage
Fig.1 Pin configuration.
handbook, halfpage
DIR
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
GND
V
CC
OE B
0
B
1
B
3
B
4
B
2
B
5
B
6
B
7
1 2 3 4 5 6 7 8 9
10
11
12
20 19 18 17
16 15 14 13
245
MNA173
1999 Sep 28 4
Philips Semiconductors Product specification
Octal bus transceiver; 3-state 74AHC245; 74AHCT245
Fig.2 Logic symbol.
handbook, halfpage
2
1
DIR
18
19
B
0
B
1
B
2
B
3
B
4
B
5
B
6
B
7
3
17
4
16
5
15
6
14
7
13
8
12
9
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
11
OE
MNA174
Fig.3 IEEE/IEC logic symbol.
handbook, halfpage
173
1
19
2
1
16
4
15
5
14
6
13
7
12
8
119
18
G3 3EN1
3EN2
2
MNA175
1999 Sep 28 5
Philips Semiconductors Product specification
Octal bus transceiver; 3-state 74AHC245; 74AHCT245
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70 °C the value of P
D
derates linearly with 8 mW/K.
For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.
SYMBOL PARAMETER CONDITIONS
74AHC 74AHCT
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
V
CC
DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V
V
I
input voltage 0 5.5 0 5.5 V
V
O
output voltage 0 V
CC
0 V
CC
V
T
amb
operating ambient temperature range
see DC and AC characteristics per device
40 +25 +85 40 +25 +85 °C
40 +25 +125 40 +25 +125 °C
t
r,tf
(t/f) input rise and fall rates VCC= 3.3 V ±0.3 V −−100 −−−ns/V
V
CC
=5V±0.5 V −−20 −−20
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
DC supply voltage 0.5 +7.0 V
V
I
input voltage range 0.5 +7.0 V
I
IK
DC input diode current VI< 0.5 V; note 1 −−20 mA
I
OK
DC output diode current VO< 0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA
I
O
DC output source or sink current 0.5V<VO<VCC+ 0.5 V −±25 mA
I
CC
DC VCC or GND current −±75 mA
T
stg
storage temperature range 65 +150 °C
P
D
power dissipation per package for temperature range: 40 to +125 °C; note 2 500 mW
1999 Sep 28 6
Philips Semiconductors Product specification
Octal bus transceiver; 3-state 74AHC245; 74AHCT245
DC CHARACTERISTICS 74AHC family
Over recommended operating conditions; voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER
TEST CONDITIONS T
amb
(°C)
UNIT
OTHER VCC(V)
25 40 to +85 40 to +125
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
V
IH
HIGH-level input voltage
2.0 1.5 −−1.5 1.5 V
3.0 2.1 −−2.1 2.1
5.5 3.85 −−3.85 3.85
V
IL
LOW-level input voltage
2.0 −− 0.5 0.5 0.5 V
3.0 −− 0.9 0.9 0.9
5.5 −− 1.65 1.65 1.65
V
OH
HIGH-level output voltage; all outputs
VI=VIHor VIL; IO= 50 µA
2.0 1.9 2.0 1.9 1.9 V
3.0 2.9 3.0 2.9 2.9
4.5 4.4 4.5 4.4 4.4
HIGH-level output voltage
V
I=VIH
or VIL;
IO= 4.0 mA
3.0 2.58 −−2.48 2.40 V
V
I=VIH
or VIL;
IO= 8.0 mA
4.5 3.94 −−3.8 3.70
V
OL
LOW-level output voltage; all outputs
VI=VIHor VIL; IO=50µA
2.0 0 0.1 0.1 0.1 V
3.0 0 0.1 0.1 0.1
4.5 0 0.1 0.1 0.1
LOW-level output voltage
V
I=VIH
or VIL;
IO=4mA
3.0 −− 0.36 0.44 0.55 V
V
I=VIH
or VIL;
IO=8mA
4.5 −− 0.36 0.44 0.55
I
I
input leakage current
VI=VCCor GND 5.5 −− 0.1 1.0 2.0 µA
I
OZ
3-state output OFF current
VI=VIHor VIL; VO=VCCor GND
5.5 −− ±0.25 −±2.5 −±10.0 µA
I
CC
quiescent supply current
VI=VCCor GND; IO=0
5.5 −− 4.0 40 80 µA
C
I
input capacitance −−310−10 10 pF
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