Philips 74AHCT244PW, 74AHCT244DB, 74AHCT244D, 74AHC244PW, 74AHC244DB Datasheet

DATA SH EET

Product speciﬁcation Supersedes data of 1999 Feb 24 File under Integrated Circuits, IC06

1999 Sep 28

INTEGRATED CIRCUITS

74AHC244; 74AHCT244

Octal buffer/line driver; 3-state

1999 Sep 28 2

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC244; 74AHCT244

FEATURES

• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V

• Balanced propagation delays

• All inputs have a Schmitt-trigger

action

• Inputsacceptsvoltageshigherthan V

CC

• For AHC only: operates with CMOS input levels

• For AHCT only: operates with TTL input levels

• Specified from

−40 to +85 and +125 °C.

DESCRIPTION

The 74AHC/AHCT244 is a high-speed Si-gate CMOS device.

The 74AHC/AHCT244 is an octal non-inverting buffer/line driver with 3-state outputs.

The 3-state outputs are controlled by the outputs enable inputs 1OE and 2OE.

AHIGHon nOE causes theoutputsto assume a high-impedanceOFF state.

FUNCTION TABLE

See note 1.

Note

1. H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF state.

QUICK REFERENCE DATA

GND = 0 V; T

amb

=25°C; tr=tf≤3.0 ns.

Notes

1. C

PD

is used to determine the dynamic power dissipation (PDin µW).

PD=CPD× V

CC

2

× fi+ ∑ (CL× V

CC

2

× fo) where: fi= input frequency in MHz; fo= output frequency in MHz; ∑ (CL× V

CC

2

× fo) = sum of outputs; CL= output load capacitance in pF; VCC= supply voltage in Volts.

2. The condition is VI= GND to VCC.

INPUTS OUTPUT

n

OE nA

n

nY

n

LLL LHH

HXZ

SYMBOL PARAMETER CONDITIONS

TYPICAL

UNIT

AHC AHCT

t

PHL/tPLH

propagation delay 1Anto 1Yn; 2Anto 2Y

n

CL=15pF; VCC=5V

3.5 5.0 ns

C

I

input capacitance VI=VCCor GND 3.5 3.5 pF

C

O

output capacitance 4.0 4.0 pF

C

PD

power dissipation capacitance

CL=50pF; f = 1 MHz; notes 1 and 2

10 12 pF

1999 Sep 28 3

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC244; 74AHCT244

PINNING

ORDERING INFORMATION

PIN SYMBOL DESCRIPTION

11

OE output enable input (active LOW)

2, 4, 6 and 8 1A

0

to 1A

3

data inputs

3, 5, 7 and 9 2Y

0

to 2Y

3

bus outputs 10 GND ground (0 V) 11, 13, 15 and 17 2A

3

to 2A

0

data inputs 12, 14, 16 and 18 1Y

3

to 1Y

0

data outputs 19 2

OE output enable input (active LOW)

20 V

CC

DC supply voltage

OUTSIDE NORTH

AMERICA

NORTH AMERICA

PACKAGES

PINS PACKAGE MATERIAL CODE

74AHC244D 74AHC244D 20 SO plastic SOT163-1 74AHC244PW 74AHC244PW DH 20 TSSOP plastic SOT360-1 74AHCT244D 74AHCT244D 20 SO plastic SOT163-1 74AHCT244PW 7AHCT244PW DH 20 TSSOP plastic SOT360-1

1999 Sep 28 4

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC244; 74AHCT244

Fig.1 Pin configuration.

handbook, halfpage

1OE

1A

0

2Y

0

1A

1

2Y

1

1A

2

2Y

2

1A

3

2Y

3

GND

V

CC

2OE 1Y

0

2A

0

2A

1

1Y

2

1Y

1

2A

2

1Y

3

2A

3

1 2 3 4 5 6 7 8 9

10

11

12

20 19 18 17 16 15 14 13

244

MNA162

Fig.2 IEEE/IEC logic symbol.

handbook, halfpage

12

14

2 4

6 8

18 16

1

EN

MNA169

3

5

11 13

15 17

9 7

19

EN

Fig.3 Logic diagram.

handbook, halfpage

MNA170

1A

3

1A

2

1A

1

1A

0

2

4

6

8

1

1Y

0

1Y

1

18

16

14

12

1Y

2

1Y

3

1OE

2A

3

2A

2

2A

1

2A

0

17

15

13

11

19

2Y

0

2Y

1

3

5

7

9

2Y

2

2Y

3

2OE

1999 Sep 28 5

Philips Semiconductors Product speciﬁcation

Octal buffer/line driver; 3-state 74AHC244; 74AHCT244

RECOMMENDED OPERATING CONDITIONS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. For SO packages: above 70 °C the value of P

D

derates linearly with 8 mW/K.

For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.

SYMBOL PARAMETER CONDITIONS

74AHC 74AHCT

UNIT

MIN. TYP. MAX. MIN. TYP. MAX.

V

CC

DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V

V

I

input voltage 0 − 5.5 0 − 5.5 V

V

O

output voltage 0 − V

CC

0 − V

CC

V

T

amb

operating ambient temperature range

see DC and AC characteristics per device

−40 +25 +85 −40 +25 +85 °C

−40 +25 +125 −40 +25 +125 °C

t

r,tf

(∆t/∆f) input rise and fall rates VCC= 3.3 V ±0.3 V −−100 −−−ns/V

V

CC

=5V±0.5 V −−20 −−20

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

DC supply voltage −0.5 +7.0 V

V

I

input voltage range −0.5 +7.0 V

I

IK

DC input diode current VI< −0.5 V; note 1 −−20 mA

I

OK

DC output diode current VO< −0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA

I

O

DC output source or sink current −0.5V<VO<VCC+ 0.5 V −±25 mA

I

CC

DC VCC or GND current −±75 mA

T

stg

storage temperature range −65 +150 °C

P

D

power dissipation per package for temperature range: −40 to +125 °C; note 2 − 500 mW