Philips 74AHC1GU04 Datasheet
INTEGRATED CIRCUITS
DATA SH EET
74AHC1GU04
Inverter
Product specification
File under Integrated Circuits, IC06
1999 May 19
Philips Semiconductors Product specification
Inverter 74AHC1GU04
FEATURES
• Symmetrical output impedance
• High noise immunity
• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V;
MM EIA/JESD22-A115-A
exceeds 200 V
• Low power dissipation
• Balanced propagation delays
• Very small 5-pin package
• Output capability: standard.
DESCRIPTION
The 74AHC1GU04 is a high-speed
Si-gate CMOS device.
The 74AHC1GU04 provides the
inverting single stage function.
FUNCTION TABLE
See note 1.
INPUT OUTPUT
inA outY
LH
HL
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
t
PHL/tPLH
propagation delay
CL= 15 pF; VCC= 5 V 2.6 ns
inA to outY
C
I
C
PD
input capacitance 3 pF
power dissipation
notes 1 and 2 14 pF
capacitance
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+(CL×V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in V;
2. The condition is VI= GND to VCC.
PINNING
PIN SYMBOL DESCRIPTION
1 n.c. not connected
2 inA data input
3 GND ground (0 V)
4 outY data output
5V
CC
DC supply voltage
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PACKAGES
TYPE NUMBER
TEMPERATURE
RANGE
PINS PACKAGE MATERIAL CODE MARKING
74AHC1GU04GW −40 to +85 °C 5 SC-88A plastic SOT353 AD
1999 May 19 2
Philips Semiconductors Product specification
Inverter 74AHC1GU04
handbook, halfpage
n.c.
inA
GND
1
2
U04
3
5
4
MNA042
Fig.1 Pin configuration.
V
CC
outY
handbook, halfpage
inA outY
2
MNA043
Fig.2 Logic symbol.
4
handbook, halfpage
2
1
4
MNA044
Fig.3 IEC logic symbol.
1999 May 19 3
handbook, halfpage
inA outY
MNA045
Fig.4 Logic diagram.
Philips Semiconductors Product specification
Inverter 74AHC1GU04
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX.
74AHC1G
V
CC
V
I
V
O
T
amb
, tf (∆t/∆f) input rise and fall times except
t
r
DC supply voltage 2.0 5.0 5.5 V
input voltage 0 − 5.5 V
output voltage 0 − V
operating ambient
temperature range
see DC and AC
characteristics per device
−40 +25 +85 °C
CC
VCC= 3.3 V ±0.3 V −−100 ns/V
for Schmitt-trigger inputs
V
=5V±0.5 V −−20
CC
V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage −0.5 +7.0 V
input voltage range −0.5 +7.0 V
DC input diode current VI< −0.5 −−20 mA
DC output diode current VO< −0.5 or VO>VCC+ 0.5 V; note 1 −±20 mA
DC output source or sink current −0.5 V < VO<VCC+ 0.5 V −±25 mA
DC VCC or GND current −±75 mA
storage temperature −65 +150 °C
power dissipation per package temperature range: −40 to +85 °C; note 2 − 200 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55 °C the value of P
derates linearly with 2.5 mW/K.
D
1999 May 19 4
Philips Semiconductors Product specification
Inverter 74AHC1GU04
DC CHARACTERISTICS
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
SYMBOL PARAMETER
V
IH
HIGH-level input
voltage
V
IL
V
OH
LOW-level input voltage 2.0 −− 0.3 − 0.3 V
HIGH-level output
voltage; all outputs
HIGH-level output
voltage
V
OL
LOW-level output
voltage; all outputs
LOW-level output
voltage
I
I
I
CC
input leakage current VI=VCCor GND 5.5 −− 0.1 − 1.0 µA
quiescent supply
current
C
I
input capacitance − 3 −−10 pF
TEST CONDITIONS T
OTHER VCC (V)
MIN. TYP. MAX. MIN. MAX.
2.0 1.7 −−1.7 − V
3.0 2.4 −−2.4 −
5.5 4.4 −−4.4 −
3.0 −− 0.6 − 0.6
5.5 −− 1.1 − 1.1
VI=VIHor VIL;
IO= −50 µA
2.0 1.9 2.0 − 1.9 − V
3.0 2.9 3.0 − 2.9 −
4.5 4.4 4.5 − 4.4 −
V
I=VIH
or VIL;
3.0 2.58 −−2.48 − V
IO= −4.0 mA
V
I=VIH
or VIL;
4.5 3.94 −−3.8 −
IO= −8.0 mA
VI=VIHor VIL;
IO=50µA
2.0 − 0 0.1 − 0.1 V
3.0 − 0 0.1 − 0.1
4.5 − 0 0.1 − 0.1
V
I=VIH
or VIL;
3.0 −− 0.36 − 0.44 V
IO=4mA
V
I=VIH
or VIL;
4.5 −− 0.36 − 0.44
IO=8mA
VI=VCCor GND;
5.5 −− 1.0 − 10 µA
IO=0
(°C)
amb
+25 −40 to +85
UNIT
1999 May 19 5
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