Philips 74AHC1G32, 74AHCT1G32 DATA SHEET

INTEGRATED CIRCUITS

DATA SH EET

74AHC1G32; 74AHCT1G32

2-input OR gate

Product specification
Supersedes data of 2002 Mar 26

2002 Jun 05

Philips Semiconductors Product specification

2-input OR gate 74AHC1G32; 74AHCT1G32

FEATURES

• Symmetrical output impedance

• High noise immunity

• ESD protection:

– HBM EIA/JESD22-A114-A exceeds 2000 V

DESCRIPTION

The74AHC1G/AHCT1G32isahigh-speedSi-gateCMOS
device.

The 74AHC1G/AHCT1G32 provides the 2-input
OR function.

– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.

• Low power dissipation

• Balanced propagation delays

• Multiple very small 5-pin packages

• Output capability: standard

• Specified from −40 to +125 °C.

QUICK REFERENCE DATA

GND = 0 V; T

=25°C; tr=tf≤3.0 ns.

amb

SYMBOL PARAMETER CONDITIONS

t

PHL/tPLH

C

I

C

PD

propagation delay A and B to Y CL= 15 pF; VCC= 5 V 3.2 3.3 ns
input capacitance 1.5 1.5 pF
power dissipation capacitance CL= 50 pF; f = 1 MHz;

notes 1 and 2

TYPICAL

UNIT

AHC1G AHCT1G

16 17 pF

Notes

1. C

is used to determine the dynamic power dissipation (PDin µW).

PD

PD=CPD× V

2

× fi+(CL×V

CC

fi= input frequency in MHz;

= output frequency in MHz;

f

o

CL= output load capacitance in pF;
VCC= supply voltage in Volts.

2. VI= GND to VCC.

2

× fo) where:

CC

2002 Jun 05 2

Philips Semiconductors Product specification

2-input OR gate 74AHC1G32; 74AHCT1G32

FUNCTION TABLE

See note 1.

INPUTS OUTPUT

ABY

LLL

LHH
HLH
HHH

Note

1. H = HIGH voltage level;
L = LOW voltage level.

ORDERING INFORMATION

TYPE NUMBER

TEMPERATURE

RANGE

PINS PACKAGE MATERIAL CODE MARKING

PACKAGE

74AHC1G32GW −40 to +125 °C 5 SC-88A plastic SOT353 AG
74AHCT1G32GW −40 to +125 °C 5 SC-88A plastic SOT353 CG
74AHC1G32GV −40 to +125 °C 5 SC-74A plastic SOT753 A32
74AHCT1G32GV −40 to +125 °C 5 SC-74A plastic SOT753 C32

PINNING

PIN SYMBOL DESCRIPTION

1 B data input B
2 A data input A
3 GND ground (0 V)
4 Y data output Y
5V

handbook, halfpage

GND

CC

B

1

A

2

32

3

MNA163

V

5

CC

Y

4

supply voltage

handbook, halfpage

1

B

2

A

Y

MNA164

4

Fig.1 Pin configuration.

2002 Jun 05 3

Fig.2 Logic symbol.

Philips Semiconductors Product specification

2-input OR gate 74AHC1G32; 74AHCT1G32

handbook, halfpage

1
2

≥1

4

MNA165

Fig.3 IEC logic symbol.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER CONDITIONS

V
V
V
T

t

r,tf

CC
I
O
amb

supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V
input voltage 0 − 5.5 0 − 5.5 V
output voltage 0 − V
operating ambient

temperature
input rise and fall

times

see DC and AC
characteristics per device

VCC= 3.3 ±0.3 V −−100 −−− ns/V
V

=5±0.5 V −−20 −−20 ns/V

CC

handbook, halfpage

B

Y

A

MNA166

Fig.4 Logic diagram.

74AHC1G 74AHCT1G

MIN. TYP. MAX. MIN. TYP. MAX.

0 − V

CC

CC

−40 +25 +125 −40 +25 +125 °C

UNIT

V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

V

I

I

IK

I

OK

I

O

I

CC

T

stg

P

D

supply voltage −0.5 +7.0 V
input voltage −0.5 +7.0 V
input diode current VI< −0.5 V −−20 mA
output diode current VO< −0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA
output source or sink current −0.5V<VO<VCC+ 0.5 V −±25 mA
VCCor GND current −±75 mA
storage temperature −65 +150 °C
power dissipation per package for temperature range from −40 to +125 °C − 250 mW

Note

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2002 Jun 05 4

Philips Semiconductors Product specification

2-input OR gate 74AHC1G32; 74AHCT1G32

DC CHARACTERISTICS
Family 74AHC1G

Over recommended operating conditions; voltages are referenced to GND (ground=0V).

SYMBOL PARAMETER

V

IH

HIGH-level input
voltage

V

IL

LOW-level input
voltage

V

OH

HIGH-leveloutput
voltage

V

OL

LOW-level output
voltage

I

LI

input leakage
current

I

CC

quiescent supply
current

C

I

input capacitance − 1.5 10 − 10 − 10 pF

TEST CONDITIONS T

OTHER

V

CC

(V)

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

25 −40 to +85 −40 to +125

amb

(°C)

UNIT

2.0 1.5 −−1.5 − 1.5 − V

3.0 2.1 −−2.1 − 2.1 − V

5.5 3.85 −−3.85 − 3.85 − V

2.0 −−0.5 − 0.5 − 0.5 V

3.0 −−0.9 − 0.9 − 0.9 V

5.5 −−1.65 − 1.65 − 1.65 V

VI=VIHor VIL;

2.0 1.9 2.0 − 1.9 − 1.9 − V

IO= −50 µA
V

I=VIH

or VIL;

3.0 2.9 3.0 − 2.9 − 2.9 − V

IO= −50 µA
V

I=VIH

or VIL;

4.5 4.4 4.5 − 4.4 − 4.4 − V

IO= −50 µA
V

I=VIH

or VIL;

3.0 2.58 −−2.48 − 2.40 − V

IO= −4.0 mA
V

I=VIH

or VIL;

4.5 3.94 −−3.8 − 3.70 − V

IO= −8.0 mA
VI=VIHor VIL;

2.0 − 0 0.1 − 0.1 − 0.1 V

IO=50µA
V

I=VIH

or VIL;

3.0 − 0 0.1 − 0.1 − 0.1 V

IO=50µA
V

I=VIH

or VIL;

4.5 − 0 0.1 − 0.1 − 0.1 V

IO=50µA
V

I=VIH

or VIL;

3.0 −−0.36 − 0.44 − 0.55 V

IO= 4.0 mA
V

I=VIH

or VIL;

4.5 −−0.36 − 0.44 − 0.55 V

IO= 8.0 mA
VI=VCCor GND 5.5 −−0.1 − 1.0 − 2.0 µA

VI=VCCor GND;

5.5 −−1.0 − 10 − 40 µA

IO=0

2002 Jun 05 5