Philips 74AHCT14PW, 74AHCT14D, 74AHC14PW, 74AHC14D Datasheet

INTEGRATED CIRCUITS
DATA SH EET
74AHC14; 74AHCT14
Hex inverting Schmitt trigger
Product specification Supersedes data of 1999 Jan 11 File under Integrated Circuits, IC06
1999 Sep 27
Philips Semiconductors Product specification
Hex inverting Schmitt trigger 74AHC14; 74AHCT14
FEATURES
ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V
Balanced propagation delays
Inputsacceptsvoltageshigherthan
V
CC
For AHC only: operates with CMOS input levels
For AHCT only: operates with TTL input levels
Specified from
40 to +85 and +125 °C.
DESCRIPTION
The 74AHC/AHCT14 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
O
C
PD
propagation delay nA to nY
input capacitance VI=VCCor GND 3.0 3.0 pF output capacitance 4.0 4.0 pF power dissipation
capacitance
CL=15pF; VCC=5V
CL= 50 pF; f = 1 MHz; notes 1 and 2
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz; fo= output frequency in MHz; (CV
2
× fo) = sum of outputs;
CC
CL= output load capacitance in pF; VCC= supply voltage in Volts.
2. The condition is VI= GND to VCC.
PINNING
TYPICAL
UNIT
AHC AHCT
3.2 4.0 ns
10 12 pF
The 74AHC/AHCT14 provide six inverting buffers with Schmitt-trigger action. They are capable of transforming slowly changing input signalsinto sharply defined, jitter-free output signals.
FUNCTION TABLE
See note 1.
INPUTS OUTPUTS
nA nY
LH
HL
Note
1. H = HIGH voltage level;
L = LOW voltage level.
PIN SYMBOL DESCRIPTION
1, 3, 5, 9, 11 and 13 1A to 6A data inputs 2, 4, 6, 8, 10 and 12 1Y to 6Y data outputs 7 GND ground (0 V) 14 V
CC
DC supply voltage
Philips Semiconductors Product specification
Hex inverting Schmitt trigger 74AHC14; 74AHCT14
ORDERING INFORMATION
OUTSIDE NORTH
AMERICA
NORTH AMERICA
PINS PACKAGE MATERIAL CODE
PACKAGES
74AHC14D 74AHC14D 14 SO plastic SOT108-1 74AHC14PW 74AHC14PW DH 14 TSSOP plastic SOT402-1 74AHCT14D 74AHCT14D 14 SO plastic SOT108-1 74AHCT14PW 74AHCT14PW DH 14 TSSOP plastic SOT402-1
handbook, halfpage
1A 1Y 2A 2Y 3A 3Y
GND
1 2 3 4
14
5 6 7
MNA203
V
14
CC
13
6A
12
6Y
11
5A
10
5Y
9
4A
8
4Y
handbook, halfpage
A
Y
MNA205
handbook, halfpage
Fig.1 Pin configuration.
1
3
5
9
11
13
1A 1Y
2A 2Y
3A 3Y
4A 4Y
5A 5Y
6A 6Y
MNA204
2
4
6
8
10
12
Fig.3 Logic symbol.
Fig.2 Logic diagram (one Schmitt trigger).
Philips Semiconductors Product specification
Hex inverting Schmitt trigger 74AHC14; 74AHCT14
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74AHC 74AHCT
V
CC
V
I
V
O
T
amb
DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 5.5 0 5.5 V output voltage 0 V operating ambient temperature
range
see DC and AC characteristics per
40 +25 +85 40 +25 +85 °C
40 +25 +125 40 +25 +125 °C
0 V
CC
CC
V
device
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground= 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage 0.5 +7.0 V input voltage range 0.5 +7.0 V DC input diode current VI< 0.5 V; note 1 −−20 mA DC output diode current VO< 0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA DC output source or sink current 0.5V<VO<VCC+ 0.5 V −±25 mA DC VCC or GND current −±75 mA storage temperature range 65 +150 °C power dissipation per package for temperature range: 40 to +125 °C; note 2 500 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.
Philips Semiconductors Product specification
Hex inverting Schmitt trigger 74AHC14; 74AHCT14
DC CHARACTERISTICS Type 74AHC14
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
SYMBOL PARAMETER
V
T+
positive going threshold
V
T
negative going threshold
V
H
hysteresis (VT+− VT)
V
OH
HIGH-level output voltage; all outputs
HIGH-level output voltage
V
OL
LOW-level output voltage; all outputs
LOW-level output voltage
I
I
input leakage current
I
CC
quiescent supply current
C
I
input capacitance 310−10 10 pF
TEST CONDITIONS T
25 40 to +85 40 to +125
amb
(°C)
UNIT
OTHER VCC(V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
3.0 −− 2.2 2.2 2.2 V
4.5 −− 3.15 3.15 3.15
5.5 −− 3.85 3.85 3.85
3.0 0.9 −−0.9 0.9 V
4.5 1.35 −−1.35 1.35
5.5 1.65 −−1.65 1.65
3.0 0.3 1.2 0.3 1.2 0.25 1.2 V
4.5 0.4 1.4 0.4 1.4 0.35 1.4
5.5 0.5 1.6 0.5 1.6 0.45 1.6
VI=VIHor VIL; IO= 50 µA
2.0 1.9 2.0 1.9 1.9 V
3.0 2.9 3.0 2.9 2.9
4.5 4.4 4.5 4.4 4.4
V
I=VIH
or VIL;
3.0 2.58 −−2.48 2.40 V
IO= 4.0 mA V
I=VIH
or VIL;
4.5 3.94 −−3.8 3.70
IO= 8.0 mA VI=VIHor VIL;
IO=50µA
2.0 0 0.1 0.1 0.1 V
3.0 0 0.1 0.1 0.1
4.5 0 0.1 0.1 0.1
V
I=VIH
or VIL;
3.0 −− 0.36 0.44 0.55 V
IO=4mA V
I=VIH
or VIL;
4.5 −− 0.36 0.44 0.55
IO=8mA VI=VCCor GND 5.5 −− 0.1 1.0 2.0 µA
VI=VCCor GND;
5.5 −− 2.0 20 40 µA
IO=0
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