Philips 74AHCT00PW, 74AHCT00D, 74AHC00PW, 74AHC00D Datasheet
INTEGRATED CIRCUITS
DATA SH EET
74AHC00; 74AHCT00
Quad 2-input NAND gate
Product specification
Supersedes data of 1998 Dec 09
File under Integrated Circuits, IC06
1999 Sep 23
Philips Semiconductors Product specification
Quad 2-input NAND gate 74AHC00; 74AHCT00
FEATURES
• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
• Balanced propagation delays
• All inputs have Schmitt-trigger
actions
• Inputs accept voltages higher than
V
CC
• For AHC only:
operates with CMOS input levels
• For AHCT only:
operates with TTL input levels
• Specified from
−40 to +85 and +125 °C.
DESCRIPTION
The 74AHC/AHCT00 are high-speed
Si-gate CMOS devices and are pin
compatible with low power Schottky
TTL (LSTTL).
They arespecified in compliancewith
JEDEC standard No. 7A.
The 74AHC/AHCT00 provides the
2-input NAND function.
FUNCTION TABLE
See note 1.
INPUT OUTPUT
nA nB nY
LLH
LHH
HLH
HHL
Note
1. H = HIGH voltage level;
L = LOW voltage level.
QUICK REFERENCE DATA
GND = 0 V; T
=25°C; tr=tf≤3.0 ns.
amb
SYMBOL PARAMETER CONDITIONS
t
PHL/tPLH
C
I
C
O
C
PD
propagation delay
nA, nB to nY
input capacitance VI=VCCor GND 3.0 3.0 pF
output capacitance 4.0 4.0 pF
power dissipation
capacitance
CL= 15 pF;
VCC=5V
CL= 50 pF;
f = 1 MHz;
notes 1 and 2
Notes
1. C
is used to determine the dynamic power dissipation (PDin µW).
PD
PD=CPD× V
2
× fi+ ∑ (CL× V
CC
2
× fo) where:
CC
fi= input frequency in MHz;
fo= output frequency in MHz;
∑ (CL× V
2
× fo) = sum of outputs;
CC
CL= output load capacitance in pF;
VCC= supply voltage in Volts.
2. The condition is VI= GND to VCC.
TYPICAL
UNIT
AHC AHCT
3.2 3.3 ns
7.0 7.0 pF
PINNING
PIN SYMBOL DESCRIPTION
1, 4, 9 and 12 1A to 4A data inputs
2, 5, 10 and 13 1B to 4B data inputs
3, 6, 8 and 11 1Y to 4Y data outputs
7 GND ground (0 V)
14 V
1999 Sep 23 2
CC
DC supply voltage
Philips Semiconductors Product specification
Quad 2-input NAND gate 74AHC00; 74AHCT00
ORDERING INFORMATION
OUTSIDE NORTH
AMERICA
NORTH AMERICA
PINS PACKAGE MATERIAL CODE
PACKAGES
74AHC00D 74AHC00D 14 SO plastic SOT108-1
74AHC00PW 74AHC00PW DH 14 TSSOP plastic SOT402-1
74AHCT00D 74AHCT00D 14 SO plastic SOT108-1
74AHCT00PW 74AHCT00PW DH 14 TSSOP plastic SOT402-1
handbook, halfpage
1A
1B
1Y
2A
2B
2Y
GND
1
2
3
4
00
5
6
7
MNA210
14
V
CC
13
4B
12
4A
11
4Y
10
3B
9
3A
8
3Y
handbook, halfpage
A
Y
B
MNA211
handbook, halfpage
Fig.1 Pin configuration.
1
1B
2
4
2B
5
9
3B
10
12
4B
13
1Y1A3
2Y2A6
3Y3A8
4Y4A11
MNA212
Fig.3 Functional diagram.
handbook, halfpage
Fig.2 Logic diagram (one gate).
1
2
4
5
9
10
12
13
&
&
&
&
MNA246
3
6
8
11
Fig.4 IEC logic symbol.
1999 Sep 23 3
Philips Semiconductors Product specification
Quad 2-input NAND gate 74AHC00; 74AHCT00
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
74AHC 74AHCT
V
CC
V
I
V
O
T
amb
DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V
input voltage 0 − 5.5 0 − 5.5 V
output voltage 0 − V
operating ambient temperature
range
see DC and AC
characteristics per
−40 +25 +85 −40 +25 +85 °C
−40 +25 +125 −40 +25 +125 °C
0 − V
CC
CC
V
device
t
(∆t/∆f) input rise and fall rates VCC= 3.3 V ±0.3 V −−100 −−−ns/V
r,tf
=5V±0.5 V −−20 −−20
V
CC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground=0V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage −0.5 +7.0 V
input voltage range −0.5 +7.0 V
DC input diode current VI< −0.5 V; note 1 −−20 mA
DC output diode current VO< −0.5 Vor VO>VCC+ 0.5 V; note 1 −±20 mA
DC output source or sink current −0.5V<VO<VCC+ 0.5 V −±25 mA
DC VCC or GND current −±75 mA
storage temperature range −65 +150 °C
power dissipation per package for temperature range: −40 to +125 °C; note 2 − 500 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70 °C the value of P
derates linearly with 8 mW/K.
D
For TSSOP packages: above 60 °C the value of PDderates linearly with 5.5 mW/K.
1999 Sep 23 4
Philips Semiconductors Product specification
Quad 2-input NAND gate 74AHC00; 74AHCT00
DC CHARACTERISTICS
74AHC family
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
SYMBOL PARAMETER
V
IH
HIGH-level input
voltage
V
IL
LOW-level input
voltage
V
OH
HIGH-level output
voltage; all
outputs
HIGH-level output
voltage
V
OL
LOW-level output
voltage; all
outputs
LOW-level output
voltage
I
I
input leakage
current
I
OZ
3-state output
OFF current
I
CC
quiescent supply
current
C
I
input capacitance −−310−10 − 10 pF
TEST CONDITIONS T
25 −40 to +85 −40 to +125
amb
(°C)
UNIT
OTHER VCC(V)
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
2.0 1.5 −−1.5 − 1.5 − V
3.0 2.1 −−2.1 − 2.1 −
5.5 3.85 −−3.85 − 3.85 −
2.0 −− 0.5 − 0.5 − 0.5 V
3.0 −− 0.9 − 0.9 − 0.9
5.5 −− 1.65 − 1.65 − 1.65
VI=VIHor VIL;
IO= −50 µA
2.0 1.9 2.0 − 1.9 − 1.9 − V
3.0 2.9 3.0 − 2.9 − 2.9 −
4.5 4.4 4.5 − 4.4 − 4.4 −
V
I=VIH
or VIL;
3.0 2.58 −−2.48 − 2.40 − V
IO= −4.0 mA
V
I=VIH
or VIL;
4.5 3.94 −−3.8 − 3.70 −
IO= −8.0 mA
VI=VIHor VIL;
IO=50µA
2.0 − 0 0.1 − 0.1 − 0.1 V
3.0 − 0 0.1 − 0.1 − 0.1
4.5 − 0 0.1 − 0.1 − 0.1
V
I=VIH
or VIL;
3.0 −− 0.36 − 0.44 − 0.55 V
IO=4mA
V
I=VIH
or VIL;
4.5 −− 0.36 − 0.44 − 0.55
IO=8mA
VI=VCCor GND 5.5 −− 0.1 − 1.0 − 2.0 µA
VI=VIHor VIL;
5.5 −− ±0.25 −±2.5 −±10.0 µA
VO=VCCor GND
VI=VCCor GND;
5.5 −− 2.0 − 20 − 40 µA
IO=0
1999 Sep 23 5
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