INTEGRATED CIRCUITS
74ABT861
10-bit bus transceiver (3-State)
Product specification |
1998 Jan 16 |
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Supersedes data of 1995 Sep 06 |
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IC23 Data Handbook |
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Philips Semiconductors |
Product specification |
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10-bit bus transceiver (3-State) |
74ABT861 |
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FEATURES
•Provides high performance bus interface buffering for wide data/address paths or buses carrying parity
•Buffered control inputs for light loading, or increased fan-in as required with MOS microprocessors
•Output capability: +64mA/±32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model
•Power-up 3-State
•Inputs are disabled during 3-State mode
QUICK REFERENCE DATA
DESCRIPTION
The 74ABT861 bus transceiver provides high performance bus interface buffering for wide data/address paths of buses carrying parity.
The 74ABT861 10-bit bus transceiver has NOR-ed transmit and receive output enables for maximum control flexibility.
SYMBOL |
PARAMETER |
CONDITIONS |
TYPICAL |
UNIT |
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Tamb = 25°C; GND = 0V |
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tPLH |
Propagation delay |
CL = 50pF; VCC = 5V |
3.4 |
ns |
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tPHL |
An to Bn or Bn to An |
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CIN |
Input capacitance |
VI = 0V or VCC |
4 |
pF |
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CI/O |
I/O capacitance |
Outputs disabled; VO = 0V or VCC |
7 |
pF |
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ICCZ |
Total supply current |
Outputs disabled; VCC =5.5V |
500 |
nA |
ORDERING INFORMATION
PACKAGES |
TEMPERATURE RANGE |
OUTSIDE NORTH AMERICA |
NORTH AMERICA |
DWG NUMBER |
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24-Pin Plastic DIP |
±40°C to +85°C |
74ABT861 N |
74ABT861 N |
SOT222-1 |
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24-Pin plastic SO |
±40°C to +85°C |
74ABT861 D |
74ABT861 D |
SOT137-1 |
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24-Pin Plastic SSOP Type II |
±40°C to +85°C |
74ABT861 DB |
74ABT861 DB |
SOT340-1 |
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24-Pin Plastic TSSOP Type I |
±40°C to +85°C |
74ABT861 PW |
74ABT861PW DH |
SOT355-1 |
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PIN CONFIGURATION
OEBA |
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1 |
24 |
VCC |
A0 |
2 |
23 |
B0 |
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A1 |
3 |
22 |
B1 |
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A2 |
4 |
21 |
B2 |
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A3 |
5 |
20 |
B3 |
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A4 |
6 |
19 |
B4 |
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TOP VIEW |
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A5 |
7 |
18 |
B5 |
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A6 |
8 |
17 |
B6 |
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A7 |
9 |
16 |
B7 |
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A8 |
10 |
15 |
B8 |
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A9 |
11 |
14 |
B9 |
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GND |
12 |
13 |
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OEAB |
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PIN DESCRIPTION
PIN NUMBER |
SYMBOL |
FUNCTION |
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A side to B side output enable |
13 |
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OEAB |
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input (active-Low) |
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2, 3, 4, 5, 6, |
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A0-A9 |
Data inputs/outputs (A side) |
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7, 8, 9, 10, 11 |
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23, 22, 21, 20, 19, |
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B0-B9 |
Data inputs/outputs (B side) |
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18, 17, 16, 15, 14 |
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B side to A side output enable |
1 |
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OEBA |
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input (active-Low) |
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12 |
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GND |
Ground (0V) |
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24 |
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VCC |
Positive supply voltage |
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SA00278
1998 Jan 16 |
2 |
853-1621 18866 |
Philips Semiconductors |
Product specification |
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10-bit bus transceiver (3-State) |
74ABT861 |
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LOGIC SYMBOL |
LOGIC SYMBOL (IEEE/IEC) |
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2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
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A0 |
A1 |
A2 |
A3 |
A4 |
A5 |
A6 |
A7 |
A8 |
A9 |
1 |
OEBA |
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13 |
OEAB |
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B0 |
B1 |
B2 |
B3 |
B4 |
B5 |
B6 |
B7 |
B8 |
B9 |
23 |
22 |
21 |
20 |
19 |
18 |
17 |
16 |
15 |
14 |
SA00279
1
13 |
EN1(BA) |
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EN2(AB) |
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2 |
1 |
23 |
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2 |
3 |
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22 |
4 |
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21 |
5 |
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20 |
6 |
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19 |
7 |
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18 |
8 |
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17 |
9 |
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16 |
10 |
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15 |
11 |
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14 |
SA00280
LOGIC DIAGRAM
OEAB
10 |
10 |
An |
Bn |
OEBA
SA00281
ABSOLUTE MAXIMUM RATINGS1, 2
FUNCTION TABLE
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INPUTS |
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OPERATING |
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MODE |
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OEAB |
OEBA |
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L |
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H |
A data to B bus |
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H |
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L |
B data to A bus |
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H |
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H |
Z |
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H |
= |
High voltage level |
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L |
= |
Low voltage level |
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X |
= |
Don't care |
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Z |
= |
High impedance ªoffº state |
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SYMBOL |
PARAMETER |
CONDITIONS |
RATING |
UNIT |
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VCC |
DC supply voltage |
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±0.5 to +7.0 |
V |
IIK |
DC input diode current |
VI < 0 |
±18 |
mA |
VI |
DC input voltage3 |
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±1.2 to +7.0 |
V |
IOK |
DC output diode current |
VO < 0 |
±50 |
mA |
V |
DC output voltage3 |
output in Off or High state |
±0.5 to +5.5 |
V |
OUT |
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IOUT |
DC output current |
output in Low state |
128 |
mA |
Tstg |
Storage temperature range |
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±65 to 150 |
°C |
NOTES:
1.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16 |
3 |
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