9-bit interface latch with set and reset
(3-State)
Product specification
Supersedes data of 1995 Sep 06
IC23 Data Handbook
1998 Jan 16
Philips Semiconductors Product specification
9-bit bus interface latch with set and reset
(3-State)
FEA TURES
•High speed parallel latches
•Extra data width for wide address/data paths or buses carrying
parity
•Ideal where high speed, light loading, or increased fan-in are
required with MOS microprocessors
•Slim DIP 300 mil package
•Broadside pinout
•Output capability: +64mA/–32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
•Power-up 3-State
•Power-up reset
QUICK REFERENCE DATA
SYMBOLPARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
IN
Propagation delay
Dn to Qn
CL = 50pF; VCC = 5V5.0ns
Input capacitanceVI = 0V or V
Output capacitance
Outputs disabled;
VO = 0V or V
Total supply currentOutputs disabled; VCC = 5.5V500nA
74ABT843
DESCRIPTION
The 74ABT843 Bus interface latch is designed to eliminate the extra
packages required to buffer existing registers and provide extra data
width for wider data/address paths of buses carrying parity.
The 74ABT843 consists of nine D-type latches with 3-State outputs.
In addition to the LE and OE
and Preset (PRE
) pin. These pins are ideal for parity bus interfacing
in high performance systems. When MR
if OE
is Low. When MR is High, data can be entered into the latch.
When PRE
is Low, the outputs are High, if OE is Low. PRE
overrides MR.
CONDITIONS
T
= 25°C; GND = 0V
amb
CC
CC
pins, it has a Master Reset (MR) pin
is Low, the outputs are Low
TYPICALUNIT
4pF
7pF
ORDERING INFORMATION
PACKAGESTEMPERATURE RANGE OUTSIDE NORTH AMERICANORTH AMERICADWG NUMBER
24-Pin Plastic DIP–40°C to +85°C74ABT843 N74ABT843 NSOT222-1
24-Pin plastic SO–40°C to +85°C74ABT843 D74ABT843 DSOT137-1
24-Pin Plastic SSOP Type II–40°C to +85°C74ABT843 DB74ABT843 DBSOT340-1
24-Pin Plastic TSSOP Type I–40°C to +85°C74ABT843 PW74ABT843PW DHSOT355-1
9-bit bus interface latch with set and reset
(3-State)
LOGIC SYMBOL
2345678910
D0 D1 D2 D3 D4 D5 D6 D7 D8
13
LE
14
PRE
11
MR
1
OE
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8
23 22 21 20 19 18 17 16 15
SA00251
LOGIC SYMBOL (IEEE/IEC)
1
EN
11
R
14
S2
13
C1
223
1D
322
421
520
619
718
817
916
1015
74ABT843
SA00252
FUNCTION TABLE
INPUTSOUTPUTSOPERATING MODE
OEPREMRLEDnQn
LLXXXHPreset
LHLXXLClear
L
L
L
L
HXXXXZHigh impedance
LHHLXNCHold
H = High voltage level
h = High voltage level one set-up time prior to the High-to-Low LE transition
L = Low voltage level
l= Low voltage level one set-up time prior to the High-to-Low LE transition
NC= No change
X = Don’t care
Z = High impedance “off” state
↓ = High-to-Low transition
H
H
H
H
H
H
H
H
H
H
↓
↓
L
H
l
h
L
H
L
H
Transparent
Latched
1998 Jan 16
3
Philips Semiconductors Product specification
9-bit bus interface latch with set and reset
(3-State)
LOGIC DIAGRAM
PRE
MR
OE
D0
14
11
13
LE
1
2
D1
3
PPPPPPPPP
D
LQ
C
D
LQ
23
Q0
D2
4
D
CCCCCCCC
LQ
22
Q1
D3
5
D
LQ
21
Q2
Q3
20
D4
6
D
LQ
Q4
D5
19
7
D
LQ
Q5
18
D6
8
D
LQ
Q6
17
D7
9
D
LQ
74ABT843
D8
10
D
LQ
16
Q7
Q8
SA00253
15
ABSOLUTE MAXIMUM RA TINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
DC supply voltage–0.5 to +7.0V
DC input diode currentVI < 0–18mA
DC input voltage
DC output diode currentVO < 0–50mA
DC output voltage
DC output currentoutput in Low state128mA
Storage temperature range–65 to 150°C
PARAMETERCONDITIONSRATINGUNIT
3
3
1, 2
–1.2 to +7.0V
output in Off or High state–0.5 to +5.5V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16
4
Philips Semiconductors Product specification
9-bit bus interface latch with set and reset
(3-State)
RECOMMENDED OPERATING CONDITIONS
SYMBOLPARAMETERLIMITSUNIT
MinMax
V
CC
V
V
V
I
OH
I
OL
∆t/∆vInput transition rise or fall rate010ns/V
T
amb
DC ELECTRICAL CHARACTERISTICS
SYMBOLPARAMETERTEST CONDITIONST
V
IK
V
OH
V
OL
V
RST
I
I
OFF
I
PU/IPD
I
OZH
I
OZL
I
CEX
I
O
I
CCH
I
CCL
I
CCZ
∆I
CC
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip–flops (or latches) after applying the power.
4. This parameter is valid for any V
transition time of up to 100µsec is permitted.
High–level output voltageVCC = 5.0V; IOH = –3mA; VI = VIL or V
VCC = 4.5V; IOH = –32mA; VI = VIL or V
Low–level output voltageVCC = 4.5V; IOL = 64mA; VI = VIL or V
Power–up output low
3
voltage
Input leakage currentVCC = 5.5V; VI = GND or 5.5V±0.01±1.0±1.0µA
I
Power-off leakage currentVCC = 0.0V; VO or V
Power-up/down 3–state
output current
4
VCC = 5.5V; IO = 1mA; VI = V
≤ 4.5V±5.0±100±100µA
I
VCC = 2.0V; VO = 0.5V; V
GND or V
CC
OE
CC
= V
3-State output High currentVCC = 5.5V; VO = 2.7V; VI = VIL or V
3-State output Low currentVCC = 5.5V; VO = 0.5V; VI = VIL or V
Output high leakage currentVCC = 5.5V; VO = 5.5V; VI = GND or V
Output current
1
VCC = 5.5V; VO = 2.5V–50–80–180–50–180mA
IH
IH
IH
IH
or GND0.130.550.55V
; VI =
CC
IH
IH
CC
VCC = 5.5V; Outputs High, VI = GND or V
Quiescent supply currentVCC = 5.5V; Outputs Low, VI = GND or V
CC
VCC = 5.5V; Outputs 3-State;
Additional supply current per
input pin
2
between 0V and 2.1V with a transition time of up to 10msec. For VCC = 2.1V to VCC = 5V 10%, a
CC
VI = GND or V
VCC = 5.5V; one input at 3.4V,
other inputs at VCC or GND
CC
2.52.92.5V
3.03.43.0V
2.02.42.0V
0.420.550.55V
±5.0±50±50µA
5.05050µA
–5.0–50–50µA
5.05050µA
CC
0.5250250µA
253434mA
0.5250250µA
0.51.51.5mA
74ABT843
CC
T
= –40°C
amb
to +85°C
V
UNIT
1998 Jan 16
5
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