Philips 74ABT623PW, 74ABT623N, 74ABT623DB, 74ABT623D Datasheet

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INTEGRATED CIRCUITS

74ABT623

Octal transceiver with dual enable, non-inverting; (3-State)

Product specification

1998 Jan 16

Supersedes data of 1996 Sep 25

 

IC23 Data Handbook

 

m n r

Philips Semiconductors

Product specification

 

 

 

 

 

 

Octal transceiver with dual enable, non-inverting

74ABT623

(3-State)

FEATURES

Octal bidirectional bus interface

3-State buffers

Power-up 3-State

Output capability: +64mA/±32mA

Latch-up protection exceeds 500mA per Jedec Std 17

ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model

Inputs are disabled during 3-State mode

DESCRIPTION

The 74ABT623 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The 74ABT623 device is an octal transceiver featuring non±inverting 3-State bus compatible outputs in both send and receive directions. The 74ABT623 is designed for asynchronous two-way communication between data buses. The control function implementation allows for maximum flexibility in timing. This device allows data transmission from the A bus to the B bus or from the B bus to the A bus, depending upon the logic levels at the Enable inputs (OEBA and OEAB). The Enable inputs can be used to disable the device so that the buses are effectively isolated.

QUICK REFERENCE DATA

SYMBOL

 

PARAMETER

CONDITIONS

TYPICAL

UNIT

 

Tamb = 25°C; GND = 0V

 

 

 

 

 

 

tPLH

Propagation delay

CL = 50pF; VCC = 5V

2.6

ns

tPHL

An to Bn or Bn to An

2.7

 

 

CIN

Input capacitance

VI = 0V or VCC

4

pF

OEAB,

OEBA

 

CI/O

I/O capacitance

Outputs disabled; VO = 0V or VCC

7

pF

ICCZ

Total supply current

Outputs disabled; VCC =5.5V

50

μA

ORDERING INFORMATION

PACKAGES

TEMPERATURE RANGE

OUTSIDE NORTH AMERICA

NORTH AMERICA

DWG NUMBER

 

 

 

 

 

20-Pin Plastic DIP

±40°C to +85°C

74ABT623 N

74ABT623 N

SOT146-1

 

 

 

 

 

20-Pin plastic SO

±40°C to +85°C

74ABT623 D

74ABT623 D

SOT163-1

 

 

 

 

 

20-Pin Plastic SSOP Type II

±40°C to +85°C

74ABT623 DB

74ABT623 DB

SOT339-1

 

 

 

 

 

20-Pin Plastic TSSOP Type I

±40°C to +85°C

74ABT623 PW

74ABT623PW DH

SOT360-1

 

 

 

 

 

PIN CONFIGURATION

 

 

 

 

PIN DESCRIPTION

 

 

 

 

 

 

 

PIN NUMBER

SYMBOL

NAME AND FUNCTION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

OEAB

Output enable input, A side to B

 

 

 

 

 

 

 

side (active-High)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OEAB

1

20

VCC

 

2, 3, 4, 5,

A0 ± A7

Data inputs/outputs (A side)

 

6, 7, 8, 9

A0

2

19

 

 

 

 

 

 

 

OEBA

 

 

 

 

 

 

 

 

 

18, 17, 16, 15,

 

 

 

 

A1

3

18

B0

 

B0 ± B7

Data inputs/outputs (B side)

 

14, 13, 12, 11

A2

4

17

B1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output enable input, B side to A

 

 

 

 

 

 

 

 

 

 

A3

5

16

B2

 

19

 

OEBA

 

 

side (active-Low)

 

 

 

 

 

 

 

 

 

 

A4

6

15

B3

 

 

 

 

 

 

 

10

 

GND

Ground (0V)

A5

7

14

B4

 

 

 

 

 

 

 

 

A6

8

13

B5

 

20

 

VCC

Positive supply voltage

A7

9

12

B6

 

 

 

 

 

 

GND

10

11

B7

 

 

 

 

 

 

 

 

SA00189

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1998 Jan 16

2

853±1459 18866

Philips 74ABT623PW, 74ABT623N, 74ABT623DB, 74ABT623D Datasheet

Philips Semiconductors

Product specification

 

 

 

Octal transceiver with dual enable, non-inverting

74ABT623

(3-State)

LOGIC SYMBOL

 

 

 

 

 

 

 

 

 

 

LOGIC SYMBOL (IEEE/IEC)

1

19

 

 

 

 

 

 

 

OEAB

 

 

 

 

 

 

 

 

OEBA

 

 

 

 

 

 

 

 

2

 

1

EN1

 

 

 

 

 

A0

 

19

EN1

 

 

18

 

 

 

 

 

3

B0

 

 

 

 

 

 

 

A1

 

 

 

18

 

17

2

1

4

B1

 

 

 

 

 

 

 

 

A2

 

 

 

2

 

16

 

 

 

 

 

 

5

B2

3

 

17

 

 

A3

 

 

 

 

 

 

 

 

15

4

 

16

6

B3

 

 

A4

14

5

 

15

 

 

 

7

B4

 

 

14

 

6

 

A5

 

 

 

 

13

 

 

13

8

B5

7

 

 

 

A6

 

 

 

12

 

12

8

 

 

 

 

9

B6

 

 

11

 

 

 

A7

 

9

 

11

 

 

 

 

 

 

 

B7

 

 

 

 

SA00195

 

 

SA00196

 

 

 

 

FUNCTION TABLE

 

INPUTS

INPUTS/OUTPUTS

 

 

 

 

 

 

 

 

 

OEAB

An

Bn

 

OEBA

 

 

 

 

 

 

 

L

 

L

An = Bn

Inputs

 

 

 

 

 

 

 

H

 

H

Inputs

Bn = An

 

 

 

 

 

 

 

H

 

L

Z

Z

 

 

 

 

 

 

 

L

 

H

An = Bn

Bn = An

 

 

 

 

 

 

H = High voltage level

L = Low voltage level

Z = High impedance ªoffº state

ABSOLUTE MAXIMUM RATINGS1, 2

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

 

 

 

 

 

VCC

DC supply voltage

 

±0.5 to +7.0

V

IIK

DC input diode current

VI < 0

±18

mA

VI

DC input voltage3

 

±1.2 to +7.0

V

IOK

DC output diode current

VO < 0

±50

mA

V

DC output voltage3

output in Off or High state

±0.5 to +5.5

V

OUT

 

 

 

 

IOUT

DC output current

output in Low state

128

mA

Tstg

Storage temperature range

 

±65 to 150

°C

NOTES:

1.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

2.The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

1998 Jan 16

3

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