INTEGRATED CIRCUITS
74ABT623
Octal transceiver with dual enable, non-inverting; (3-State)
Product specification |
1998 Jan 16 |
|
Supersedes data of 1996 Sep 25 |
||
|
||
IC23 Data Handbook |
|
m n r
Philips Semiconductors |
Product specification |
|
|
|
|
|
|
|
Octal transceiver with dual enable, non-inverting
74ABT623
(3-State)
FEATURES
•Octal bidirectional bus interface
•3-State buffers
•Power-up 3-State
•Output capability: +64mA/±32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model
•Inputs are disabled during 3-State mode
DESCRIPTION
The 74ABT623 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The 74ABT623 device is an octal transceiver featuring non±inverting 3-State bus compatible outputs in both send and receive directions. The 74ABT623 is designed for asynchronous two-way communication between data buses. The control function implementation allows for maximum flexibility in timing. This device allows data transmission from the A bus to the B bus or from the B bus to the A bus, depending upon the logic levels at the Enable inputs (OEBA and OEAB). The Enable inputs can be used to disable the device so that the buses are effectively isolated.
QUICK REFERENCE DATA
SYMBOL |
|
PARAMETER |
CONDITIONS |
TYPICAL |
UNIT |
||
|
Tamb = 25°C; GND = 0V |
||||||
|
|
|
|
|
|
||
tPLH |
Propagation delay |
CL = 50pF; VCC = 5V |
2.6 |
ns |
|||
tPHL |
An to Bn or Bn to An |
2.7 |
|||||
|
|
||||||
CIN |
Input capacitance |
VI = 0V or VCC |
4 |
pF |
|||
OEAB, |
OEBA |
|
|||||
CI/O |
I/O capacitance |
Outputs disabled; VO = 0V or VCC |
7 |
pF |
|||
ICCZ |
Total supply current |
Outputs disabled; VCC =5.5V |
50 |
μA |
ORDERING INFORMATION
PACKAGES |
TEMPERATURE RANGE |
OUTSIDE NORTH AMERICA |
NORTH AMERICA |
DWG NUMBER |
|
|
|
|
|
20-Pin Plastic DIP |
±40°C to +85°C |
74ABT623 N |
74ABT623 N |
SOT146-1 |
|
|
|
|
|
20-Pin plastic SO |
±40°C to +85°C |
74ABT623 D |
74ABT623 D |
SOT163-1 |
|
|
|
|
|
20-Pin Plastic SSOP Type II |
±40°C to +85°C |
74ABT623 DB |
74ABT623 DB |
SOT339-1 |
|
|
|
|
|
20-Pin Plastic TSSOP Type I |
±40°C to +85°C |
74ABT623 PW |
74ABT623PW DH |
SOT360-1 |
|
|
|
|
|
PIN CONFIGURATION |
|
|
|
|
PIN DESCRIPTION |
|
||||
|
|
|
|
|
|
PIN NUMBER |
SYMBOL |
NAME AND FUNCTION |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1 |
|
OEAB |
Output enable input, A side to B |
|
|
|
|
|
|
|
|
side (active-High) |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OEAB |
1 |
20 |
VCC |
|
2, 3, 4, 5, |
A0 ± A7 |
Data inputs/outputs (A side) |
|||
|
6, 7, 8, 9 |
|||||||||
A0 |
2 |
19 |
|
|
|
|
|
|
|
|
OEBA |
|
|
|
|
|
|
|
|||
|
|
18, 17, 16, 15, |
|
|
|
|
||||
A1 |
3 |
18 |
B0 |
|
B0 ± B7 |
Data inputs/outputs (B side) |
||||
|
14, 13, 12, 11 |
|||||||||
A2 |
4 |
17 |
B1 |
|
|
|
|
|
||
|
|
|
|
|
|
|||||
|
|
|
|
|
Output enable input, B side to A |
|||||
|
|
|
|
|
|
|
|
|
|
|
A3 |
5 |
16 |
B2 |
|
19 |
|
OEBA |
|||
|
|
side (active-Low) |
||||||||
|
|
|
|
|
|
|
|
|
|
|
A4 |
6 |
15 |
B3 |
|
|
|
|
|
|
|
|
10 |
|
GND |
Ground (0V) |
||||||
A5 |
7 |
14 |
B4 |
|
|
|||||
|
|
|
|
|
|
|||||
A6 |
8 |
13 |
B5 |
|
20 |
|
VCC |
Positive supply voltage |
||
A7 |
9 |
12 |
B6 |
|
|
|
|
|
|
|
GND |
10 |
11 |
B7 |
|
|
|
|
|
|
|
|
|
SA00189 |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
1998 Jan 16 |
2 |
853±1459 18866 |
Philips Semiconductors |
Product specification |
|
|
|
|
Octal transceiver with dual enable, non-inverting
74ABT623
(3-State)
LOGIC SYMBOL |
|
|
|
|
|
|
|
|
|
|
LOGIC SYMBOL (IEEE/IEC) |
|||
1 |
19 |
|
|
|
|
|
|
|
||||||
OEAB |
|
|
|
|
|
|
|
|
OEBA |
|
|
|
|
|
|
|
|
|
2 |
|
1 |
EN1 |
|
|
|
|
|
|
A0 |
|
19 |
EN1 |
|
|
18 |
|
||
|
|
|
|
|
3 |
B0 |
|
|
|
|
|
|
|
|
A1 |
|
|
|
18 |
|
17 |
2 |
1 |
|
4 |
B1 |
|
||
|
|
|
||
|
|
|
|
|
A2 |
|
|
|
2 |
|
16 |
|
|
|
|
|
|
|
|
5 |
B2 |
3 |
|
17 |
|
|
|||
A3 |
|
|
|
|
|
|
|
|
|
|
15 |
4 |
|
16 |
6 |
B3 |
|
|
|
A4 |
14 |
5 |
|
15 |
|
|
|
||
7 |
B4 |
|
|
14 |
|
6 |
|
||
A5 |
|
|
|
|
|
13 |
|
|
13 |
8 |
B5 |
7 |
|
|
|
|
|||
A6 |
|
|
|
12 |
|
12 |
8 |
|
|
|
|
|
||
9 |
B6 |
|
|
11 |
|
|
|
||
A7 |
|
9 |
|
|
11 |
|
|
||
|
|
|
|
|
|
B7 |
|
|
|
|
SA00195 |
|
|
SA00196 |
|
|
|
|
FUNCTION TABLE
|
INPUTS |
INPUTS/OUTPUTS |
|||
|
|
|
|
|
|
|
|
|
OEAB |
An |
Bn |
|
OEBA |
||||
|
|
|
|
|
|
|
L |
|
L |
An = Bn |
Inputs |
|
|
|
|
|
|
|
H |
|
H |
Inputs |
Bn = An |
|
|
|
|
|
|
|
H |
|
L |
Z |
Z |
|
|
|
|
|
|
|
L |
|
H |
An = Bn |
Bn = An |
|
|
|
|
|
|
H = High voltage level
L = Low voltage level
Z = High impedance ªoffº state
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL |
PARAMETER |
CONDITIONS |
RATING |
UNIT |
|
|
|
|
|
VCC |
DC supply voltage |
|
±0.5 to +7.0 |
V |
IIK |
DC input diode current |
VI < 0 |
±18 |
mA |
VI |
DC input voltage3 |
|
±1.2 to +7.0 |
V |
IOK |
DC output diode current |
VO < 0 |
±50 |
mA |
V |
DC output voltage3 |
output in Off or High state |
±0.5 to +5.5 |
V |
OUT |
|
|
|
|
IOUT |
DC output current |
output in Low state |
128 |
mA |
Tstg |
Storage temperature range |
|
±65 to 150 |
°C |
NOTES:
1.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16 |
3 |