INTEGRATED CIRCUITS
74ABT623
Octal transceiver with dual enable,
non-inverting; (3-State)
Product specification
Supersedes data of 1996 Sep 25
IC23 Data Handbook
1998 Jan 16
Philips Semiconductors Product specification
Octal transceiver with dual enable, non-inverting
(3-State)
FEA TURES
•Octal bidirectional bus interface
•3-State buffers
•Power-up 3-State
•Output capability: +64mA/–32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
•Inputs are disabled during 3-State mode
QUICK REFERENCE DATA
SYMBOL PARAMETER
t
PLH
t
PHL
C
C
I
CCZ
IN
I/O
Propagation delay
An to Bn or Bn to An
Input capacitance
OEAB, OEBA
CL = 50pF; VCC = 5V
VI = 0V or V
I/O capacitance Outputs disabled; VO = 0V or V
Total supply current Outputs disabled; VCC =5.5V 50 µA
DESCRIPTION
The 74ABT623 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT623 device is an octal transceiver featuring non–inverting
3-State bus compatible outputs in both send and receive directions.
The 74ABT623 is designed for asynchronous two-way
communication between data buses. The control function
implementation allows for maximum flexibility in timing. This device
allows data transmission from the A bus to the B bus or from the B
bus to the A bus, depending upon the logic levels at the Enable
inputs (OEBA
the device so that the buses are effectively isolated.
CONDITIONS
T
= 25°C; GND = 0V
amb
CC
74ABT623
and OEAB). The Enable inputs can be used to disable
TYPICAL UNIT
CC
2.6
2.7
4 pF
7 pF
ns
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
20-Pin Plastic DIP –40°C to +85°C 74ABT623 N 74ABT623 N SOT146-1
20-Pin plastic SO –40°C to +85°C 74ABT623 D 74ABT623 D SOT163-1
20-Pin Plastic SSOP Type II –40°C to +85°C 74ABT623 DB 74ABT623 DB SOT339-1
20-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT623 PW 74ABT623PW DH SOT360-1
PIN CONFIGURATION
1
OEAB
2
A0
3
A1
4
A2
5
A3
6
A4
7
A5
8
A6
9
A7
10 11
GND
20
V
CC
19
OEBA
18
B0
17
B1
16
B2
15
B3
14
B4
13
B5
12
B6
B7
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
1 OEAB
2, 3, 4, 5,
6, 7, 8, 9
18, 17, 16, 15,
14, 13, 12, 11
A0 – A7 Data inputs/outputs (A side)
B0 – B7 Data inputs/outputs (B side)
19 OEBA
10 GND Ground (0V)
20 V
Output enable input, A side to B
side (active-High)
Output enable input, B side to A
side (active-Low)
Positive supply voltage
CC
SA00189
1998 Jan 16 853–1459 18866
2
Philips Semiconductors Product specification
Octal transceiver with dual enable, non-inverting
(3-State)
LOGIC SYMBOL
OEAB
A0
A1
A2
A3
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
19
18
B0
17
B1
16
B2
15
B3
14
B4
13
B5
12
B6
11
B7
SA00195
OEBA
LOGIC SYMBOL (IEEE/IEC)
74ABT623
1
19
2
3
4
5
6
7
8
9
EN1
EN1
1
2
18
17
16
15
14
13
12
11
SA00196
FUNCTION TABLE
INPUTS INPUTS/OUTPUTS
OEBA OEAB An Bn
L L An = Bn Inputs
H H Inputs Bn = An
H L Z Z
L H An = Bn Bn = An
H =High voltage level
L =Low voltage level
Z =High impedance “off” state
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
V
I
CC
I
IK
V
I
OK
OUT
OUT
T
stg
DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
DC input voltage
I
DC output diode current VO < 0 –50 mA
DC output voltage
DC output current output in Low state 128 mA
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER CONDITIONS RATING UNIT
3
3
1, 2
–1.2 to +7.0 V
output in Off or High state –0.5 to +5.5 V
1998 Jan 16
3