INTEGRATED CIRCUITS
74ABT126
Quad buffer (3-State)
Product specification |
1998 Jan 16 |
Supersedes data of 1996 Feb 26
IC23 Data Handbook
m n r
Philips Semiconductors |
Product specification |
|
|
|
|
|
|
|
Quad buffer (3-State) |
74ABT126 |
|
|
|
|
|
|
|
FEATURES
•Quad bus interface
•3-State buffers
•Live insertion/extraction permitted
•Output capability: +64mA/±32mA
•Latch-up protection exceeds 500mA per JEDEC Std 17
•ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model
•Power-up 3-State
•Inputs are disabled during 3-State mode
QUICK REFERENCE DATA
DESCRIPTION
The 74ABT126 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The 74ABT126 device is a quad buffer that is ideal for driving bus lines. The device features four Output Enables (OE0, OE1, OE2, OE3), each controlling one of the 3-State outputs.
SYMBOL |
PARAMETER |
CONDITIONS |
TYPICAL |
UNIT |
|
Tamb = 25°C; GND = 0V |
|||||
|
|
|
|
||
tPLH |
Propagation delay |
CL = 50pF; VCC = 5V |
2.9 |
ns |
|
tPHL |
An to Yn |
||||
|
|
|
|||
CIN |
Input capacitance |
VI = 0V or VCC |
4 |
pF |
|
COUT |
Output capacitance |
Outputs disabled; VO = |
7 |
pF |
|
0V or VCC |
|||||
|
|
|
|
||
ICCZ |
Total supply current |
Outputs disabled; VCC = 5.5V |
65 |
μA |
ORDERING INFORMATION
PACKAGES |
TEMPERATURE RANGE |
OUTSIDE NORTH AMERICA |
NORTH AMERICA |
DWG NUMBER |
|
|
|
|
|
14-Pin Plastic DIP |
±40°C to +85°C |
74ABT126 N |
74ABT126 N |
SOT27-1 |
|
|
|
|
|
14-Pin plastic SO |
±40°C to +85°C |
74ABT126 D |
74ABT126 D |
SOT108-1 |
|
|
|
|
|
14-Pin Plastic SSOP Type II |
±40°C to +85°C |
74ABT126 DB |
74ABT126 DB |
SOT337-1 |
|
|
|
|
|
14-Pin Plastic TSSOP Type I |
±40°C to +85°C |
74ABT126 PW |
74ABT126PW DH |
SOT402-1 |
|
|
|
|
|
PIN DESCRIPTION
PIN NUMBER |
SYMBOL |
NAME AND FUNCTION |
|
|
|
2, 5, 9, 12 |
A0 ± A3 |
Data inputs |
|
|
|
3, 6, 8, 11 |
Y0 ± Y3 |
Data outputs |
|
|
|
1, 4, 10, 13 |
OE0 ± OE3 |
Output enable inputs |
|
|
|
7 |
GND |
Ground (0V) |
|
|
|
14 |
VCC |
Positive supply voltage |
PIN CONFIGURATION |
|
|
LOGIC SYMBOL |
|
|
|
|
|
|||
|
|
|
|
|
|
OE0 |
1 |
|
|
|
|
|
|
|
|
|
|
|
|
3 |
|
||
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
2 |
|
Y0 |
||||
OE0 |
1 |
|
14 |
VCC |
A0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
A0 |
2 |
|
13 |
OE3 |
|
OE1 |
4 |
|
|
|
|
|
|
|
|
|
|
|
|||||
Y0 |
3 |
|
12 |
A3 |
|
|
|
6 |
|
||
|
5 |
|
Y1 |
||||||||
OE1 |
4 |
|
11 |
Y3 |
A1 |
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
||||
A1 |
5 |
|
10 |
OE2 |
|
OE2 |
10 |
|
|
|
|
|
|
|
|
8 |
|
||||||
Y1 |
6 |
|
9 |
A2 |
9 |
|
Y2 |
||||
|
A2 |
|
|
|
|
|
|||||
GND |
7 |
|
8 |
Y2 |
|
13 |
|
|
|||
|
|
|
|
|
|
||||||
|
|
|
|
|
|
OE3 |
|
|
|
||
|
|
|
|
|
12 |
|
11 |
|
|||
|
|
|
|
|
A3 |
|
|
|
|
|
Y3 |
|
|
|
|
|
|
|
|
|
|
||
|
|
|
SA00031 |
|
|
|
|
|
SA00032 |
||
|
|
|
|
|
|
|
|
|
|
|
|
1998 Jan 16 |
2 |
853±1607 18867 |
Philips Semiconductors |
Product specification |
|
|
|
|
Quad buffer (3-State) |
74ABT126 |
|
|
|
|
LOGIC SYMBOL (IEEE/IEC)
1 |
EN |
1 |
3 |
|
2 |
||||
|
||||
|
|
|
||
4 |
|
|
6 |
|
|
|
|||
5 |
|
|
||
|
|
|
||
10 |
|
|
8 |
|
|
|
|||
9 |
|
|
||
|
|
|
||
13 |
|
|
11 |
|
|
|
|||
12 |
|
|
||
|
|
|
||
|
|
|
|
FUNCTION TABLE
|
INPUTS |
|
OUTPUTS |
|
|
|
|
|
|
|
OEn |
|
An |
Yn |
|
|
|
|
|
|
H |
|
L |
L |
|
H |
|
H |
H |
|
L |
|
X |
Z |
|
|
|
|
|
H |
= High voltage level |
|
|
|
L |
= Low voltage level |
|
|
|
X |
= Don't care |
|
|
|
Z |
= High impedance ºoffº state |
|
|
|
SA00461
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL |
PARAMETER |
CONDITIONS |
RATING |
UNIT |
|
|
|
|
|
VCC |
DC supply voltage |
|
±0.5 to +7.0 |
V |
IIK |
DC input diode current |
VI < 0 |
±18 |
mA |
VI |
DC input voltage3 |
|
±1.2 to +7.0 |
V |
IOK |
DC output diode current |
VO < 0 |
±50 |
mA |
V |
DC output voltage3 |
output in Off or High state |
±0.5 to +5.5 |
V |
OUT |
|
|
|
|
IOUT |
DC output current |
output in Low state |
128 |
mA |
Tstg |
Storage temperature range |
|
±65 to 150 |
°C |
NOTES:
1.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL |
PARAMETER |
|
LIMITS |
UNIT |
|
|
|
|
|||
Min |
|
Max |
|||
|
|
|
|
||
|
|
|
|
|
|
VCC |
DC supply voltage |
4.5 |
|
5.5 |
V |
VI |
Input voltage |
0 |
|
VCC |
V |
VIH |
High-level input voltage |
2.0 |
|
|
V |
VIL |
Low-level Input voltage |
|
|
0.8 |
V |
IOH |
High-level output current |
|
|
±32 |
mA |
IOL |
Low-level output current |
|
|
64 |
mA |
t/ v |
Input transition rise or fall rate |
0 |
|
10 |
ns/V |
|
|
|
|
|
|
Tamb |
Operating free-air temperature range |
±40 |
|
+85 |
°C |
1998 Jan 16 |
3 |
Loading...