Philips 74ABT125PW, 74ABT125DB, 74ABT125D Datasheet
74ABT125
Quad buffer (3-State)
Product specification
Supersedes data of 1996 Mar 05
1998 Jan 16
INTEGRATED CIRCUITS
IC23 Data Handbook
Philips Semiconductors Product specification
74ABT125Quad buffer (3-State)
2
1998 Jan 16 853–1606 18868
FEA TURES
•Quad bus interface
•3-State buffers
•Live insertion/extraction permitted
•Output capability: +64mA/–32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
•Power-up 3-State
•Inputs are disabled during 3-State mode
DESCRIPTION
The 74ABT125 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT125 device is a quad buffer that is ideal for driving bus
lines. The device features four Output Enables (OE
0, OE1, OE2,
OE
3), each controlling one of the 3-State outputs.
QUICK REFERENCE DA TA
SYMBOL PARAMETER
CONDITIONS
T
amb
= 25°C; GND = 0V
TYPICAL UNIT
t
PLH
t
PHL
Propagation delay
An to Yn
CL = 50pF; VCC = 5V 2.9 ns
C
IN
Input capacitance VI = 0V or V
CC
4 pF
C
OUT
Output capacitance
Outputs disabled;
VO = 0V or V
CC
7 pF
I
CCZ
Total supply current Outputs disabled; VCC =5.5V 65 µA
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
14-Pin Plastic DIP –40°C to +85°C 74ABT125 N 74ABT125 N SOT27-1
14-Pin plastic SO –40°C to +85°C 74ABT125 D 74ABT125 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +85°C 74ABT125 DB 74ABT125 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT125 PW 74ABT125PW DH SOT402-1
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
2, 5, 9, 12 A0 – A3 Data inputs
3, 6, 8, 11 Y0 – Y3 Data outputs
1, 4, 10, 13 OE0 – OE3 Output enable inputs (active-Low)
7 GND Ground (0V)
14 V
CC
Positive supply voltage
PIN CONFIGURATION
OE0
A0
Y0
OE1
A1
Y1
GND Y2
A2
OE
2
Y3
A3
OE
3
V
CC
1
2
3
4
5
6
78
9
10
11
12
13
14
SA00025
LOGIC SYMBOL
2
3
Y0
OE
0
1
5
6
Y1
OE
1
4
9
8
Y2
OE
2
10
12
11
Y3
OE
3
13
A0
A1
A2
A3
SA00026
Philips Semiconductors Product specification
74ABT125Quad buffer (3-State)
1998 Jan 16
3
LOGIC SYMBOL (IEEE/IEC)
1
3
2
EN
4
6
5
10
8
9
13
11
12
1
SA00027
FUNCTION T ABLE
INPUTS OUTPUTS
OEn An Yn
L L L
L H H
H X Z
H =High voltage level
L =Low voltage level
X = Don’t care
Z =High impedance ”off” state
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER CONDITIONS RATING UNIT
V
CC
DC supply voltage –0.5 to +7.0 V
I
IK
DC input diode current VI < 0 –18 mA
V
I
DC input voltage
3
–1.2 to +7.0 V
I
OK
DC output diode current VO < 0 –50 mA
V
OUT
DC output voltage
3
output in Off or High state –0.5 to +5.5 V
I
OUT
DC output current output in Low state 128 mA
T
stg
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
PARAMETER
MIN MAX
UNIT
V
CC
DC supply voltage 4.5 5.5 V
V
I
Input voltage 0 V
CC
V
V
IH
High-level input voltage 2.0 V
V
IL
Low-level input voltage 0.8 V
I
OH
High-level output current –32 mA
I
OL
Low-level output current 64 mA
∆t/∆v Input transition rise or fall rate 0 10 ns/V
T
amb
Operating free-air temperature range –40 +85 °C
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