Philips 74abt125 DATASHEETS
INTEGRATED CIRCUITS
74ABT125
Quad buffer (3-State)
Product specification
Supersedes data of 1996 Mar 05
IC23 Data Handbook
1998 Jan 16
Philips Semiconductors Product specification
74ABT125Quad buffer (3-State)
FEA TURES
•Quad bus interface
•3-State buffers
•Live insertion/extraction permitted
•Output capability: +64mA/–32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
DESCRIPTION
The 74ABT125 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT125 device is a quad buffer that is ideal for driving bus
lines. The device features four Output Enables (OE
OE
3), each controlling one of the 3-State outputs.
0, OE1, OE2,
•ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
•Power-up 3-State
•Inputs are disabled during 3-State mode
QUICK REFERENCE DATA
SYMBOL PARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
IN
Propagation delay
An to Yn
CL = 50pF; VCC = 5V 2.9 ns
Input capacitance VI = 0V or V
Output capacitance
Outputs disabled;
VO = 0V or V
Total supply current Outputs disabled; VCC =5.5V 65 µA
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
14-Pin Plastic DIP –40°C to +85°C 74ABT125 N 74ABT125 N SOT27-1
14-Pin plastic SO –40°C to +85°C 74ABT125 D 74ABT125 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +85°C 74ABT125 DB 74ABT125 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT125 PW 74ABT125PW DH SOT402-1
CONDITIONS
T
= 25°C; GND = 0V
amb
CC
CC
TYPICAL UNIT
4 pF
7 pF
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
2, 5, 9, 12 A0 – A3 Data inputs
3, 6, 8, 11 Y0 – Y3 Data outputs
1, 4, 10, 13 OE0 – OE3 Output enable inputs (active-Low)
7 GND Ground (0V)
14 V
PIN CONFIGURATION
OE0
1
A0
2
Y0
3
OE1
4
A1
5
Y1
6
GND Y2
78
14
13
12
11
10
9
SA00025
CC
V
OE
A3
Y3
OE
A2
CC
3
2
Positive supply voltage
LOGIC SYMBOL
1
0
OE
2
A0
4
OE
1
5
A1
10
2
OE
9
A2
13
OE
3
12
A3
3
6
8
11
SA00026
Y0
Y1
Y2
Y3
1998 Jan 16 853–1606 18868
2
Philips Semiconductors Product specification
SYMBOL
PARAMETER
UNIT
74ABT125Quad buffer (3-State)
LOGIC SYMBOL (IEEE/IEC)
FUNCTION TABLE
INPUTS OUTPUTS
1
EN
2
4
5
10
9
13
12
1
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
DC input voltage
DC output diode current VO < 0 –50 mA
DC output voltage
DC output current output in Low state 128 mA
Storage temperature range –65 to 150 °C
PARAMETER CONDITIONS RATING UNIT
3
3
3
6
8
11
SA00027
1, 2
output in Off or High state –0.5 to +5.5 V
OEn An Yn
L L L
L H H
H X Z
H =High voltage level
L =Low voltage level
X = Don’t care
Z =High impedance ”off” state
–1.2 to +7.0 V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
MIN MAX
V
CC
V
V
V
I
OH
I
OL
∆t/∆v Input transition rise or fall rate 0 10 ns/V
T
amb
1998 Jan 16
DC supply voltage 4.5 5.5 V
Input voltage 0 V
I
High-level input voltage 2.0 V
IH
Low-level input voltage 0.8 V
IL
High-level output current –32 mA
Low-level output current 64 mA
Operating free-air temperature range –40 +85 °C
3
CC
V
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