Philips 74ABT10PW, 74ABT10N, 74ABT10DB, 74ABT10D Datasheet

INTEGRATED CIRCUITS

74ABT10

Triple 3-input NAND gate

Product specification 1995 Sep 22
IC23 Data Handbook

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Philips Semiconductors Product specification

CC

74ABT10Triple 3-input NAND gate

QUICK REFERENCE DATA

CONDITIONS

SYMBOL PARAMETER

T

Propagation

IN

CC

delay
An, Bn, Cn
to Y

n

Output to
Output skew

Input
capacitance

Total supply
current

CL = 50pF;
VCC = 5V

VI = 0V or V
Outputs disabled;

VCC = 5.5V

t

PLH

t

PHL

t

OSLH

t

OSHL

C

I

PIN CONFIGURATION

1

A0

2

B0
A1

3

B1

4

C1

5

1

6

Y

GND

PIN DESCRIPTION

PIN

NUMBER

1, 2, 3, 4, 5,

9, 10, 11, 13

6, 8, 12 Yn Data outputs

7 GND Ground (0V)

14 V

SYMBOL NAME AND FUNCTION

An, Bn,

Cn

Data inputs

Positive supply voltage

CC

LOGIC DIAGRAM

1

A0

2

B0

13

C0

3

A1

4

B1

5

C1

9

A2

10

B2

11

VCC = Pin 14
GND = Pin 7

C2

= 25°C;

amb

GND = 0V

SA00346

CC

14

V

13

C0

12

Y

11

C2
B2

10

A2

9
87

Y2

12

6

8

SA00348

TYPICAL UNIT

3.3

2.2

0.4 ns

3 pF

50 µA

CC

0

Y0

Y1

Y2

ns

LOGIC SYMBOL

1 2 13 3 4 5 9 10

A0 B0 C0 B1 C1 A2 B2A1

Y0Y1Y2

VCC = Pin 14
GND = Pin 7

12 6 8

LOGIC SYMBOL (IEEE/IEC)

1

2

13

3

4

5

9

10

11

&

FUNCTION TABLE

INPUTS OUTPUTS

An Bn Cn Yn

L L L H
L L H H
L H L H

L H H H
H L L H
H L H H
H H L H
H H H L

NOTES:

H = High voltage level
L = Low voltage level

11

C2

SA00347

12

6

8

SV00059

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

14-Pin Plastic DIP –40°C to +85°C 74ABT10 N 74ABT10 N SOT27-1
14-Pin plastic SO –40°C to +85°C 74ABT10 D 74ABT10 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +85°C 74ABT10 DB 74ABT10 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT10 PW 74ABT10PW DH SOT402-1

1995 Sep 22 853-1810 15793

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

UNIT

74ABT10Triple 3-input NAND gate

ABSOLUTE MAXIMUM RATINGS

1, 2

SYMBOL PARAMETER CONDITIONS RATING UNIT

V

I

V

CC

I

IK

V

I

OK

OUT

OUT

T

stg

DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA

I

DC input voltage

3

–1.2 to +7.0 V
DC output diode current VO < 0 –50 mA
DC output voltage

3

output in Off or High state –0.5 to +5.5 V
DC output current output in Low state 40 mA
Storage temperature range –65 to 150 °C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

LIMITS

MIN MAX

V

CC

V
V
V
I

OH

I

OL

∆t/∆v Input transition rise or fall rate 0 10 ns/V

T

amb

DC supply voltage 4.5 5.5 V
Input voltage 0 V

I

High-level input voltage 2.0 V

IH

Low-level input voltage 0.8 V

IL

High-level output current –15 mA
Low-level output current 20 mA

Operating free-air temperature range –40 +85 °C

CC

V

DC ELECTRICAL CHARACTERISTICS

LIMITS

SYMBOL PARAMETER TEST CONDITIONS

V

V

V

I

OFF

I

CEX

I

∆I

Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V

IK

High-level output voltage VCC = 4.5V; IOH = –15mA; VI = VIL or V

OH

Low-level output voltage VCC = 4.5V; IOL = 20mA; VI = VIL or V

OL

I

Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA

I

IH

IH

Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA
Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V

I

Output current

O

Quiescent supply current VCC = 5.5V; VI = GND or V

CC

Additional supply current per

CC

input pin

1

2

VCC = 5.5V; VO = 2.5V –50 –75 –180 –50 –180 mA

VCC = 5.5V; One data input at 3.4V, other
inputs at VCC or GND

CC

CC

NOTES:

1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.

2. This is the increase in supply current for each input at 3.4V.

3. For valid test results, data must not be loaded into the flip-flop or latch after applying the power.

T

= +25°C

amb

MIN TYP MAX MIN MAX

2.5 2.9 2.5 V

0.35 0.5 0.5 V

5.0 50 50 µA

2 50 50 µA

0.25 500 500 µA

T

amb

to +85°C

= –40°C

UNIT

1995 Sep 22

3