INTEGRATED CIRCUITS
74ABT08
Quad 2-input AND gate
Product specification 1995 Sep 18
IC23 Data Handbook
Philips Semiconductors Product specification
74ABT08Quad 2-input AND gate
QUICK REFERENCE DATA
CONDITIONS
SYMBOL PARAMETER
IN
CC
Propagation
delay
An or Bn to Yn
Output to
Output skew
Input
capacitance
Total supply
current
t
PLH
t
PHL
t
OSLH
t
OSHL
C
I
T
CL = 50pF;
CC
VI = 0V or V
Outputs disabled;
VCC = 5.5V
PIN CONFIGURATION
A0
1
B0
2
Y0
3
A1
4
B1
5
Y1
6
GND
LOGIC SYMBOL
= 25°C;
amb
GND = 0V
=
SA00342
LOGIC DIAGRAM
1
A0
TYPICAL UNIT
2.4
1.9
0.4 ns
CC
3 pF
50 µA
14
V
CC
B3
13
A3
12
Y3
11
B2
10
A2
9
Y2
87
ns
VCC = Pin 14
GND = Pin 7
PIN DESCRIPTION
PIN
NUMBER
1, 2, 4, 5, 9,
10, 12, 13
3, 6, 8, 11 Yn Data outputs
7 GND Ground (0V)
14 V
SYMBOL NAME AND FUNCTION
An-Bn Data inputs
LOGIC SYMBOL (IEEE/IEC)
1
2
4
5
2
B0
4
A1
5
B1
9
A2
10
B2
12
A3
13
B3
Positive supply voltage
CC
&
3
6
8
11
SA00344
Y0
Y1
Y2
Y3
3
6
V
= Pin 14
CC
GND = Pin 7
12459101213
B1A0 B0 A1 A2 B2 A3 B3
Y0 Y1 Y2 Y3
36811
SA00343
FUNCTION TABLE
9
10
12
13
8
11
INPUTS OUTPUT
An Bn Yn
L L L
L H L
H L L
H H H
NOTES:
H = High voltage level
L = Low voltage level
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
14-Pin Plastic DIP –40°C to +85°C 74ABT08 N 74ABT08 N SOT27-1
14-Pin plastic SO –40°C to +85°C 74ABT08 D 74ABT08 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +85°C 74ABT08 DB 74ABT08 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT08 PW 74ABT08PW DH SOT402-1
SA00363
1995 Sep 18 853-1806 15752
2
Philips Semiconductors Product specification
74ABT08Quad 2-input AND gate
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
I
V
I
V
I
OK
OUT
OUT
T
CC
IK
stg
DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
I
DC input voltage
3
–1.2 to +7.0 V
DC output diode current VO < 0 –50 mA
DC output voltage
3
output in Off or High state –0.5 to +5.5 V
DC output current output in Low state 40 mA
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
MIN MAX
V
CC
V
V
V
I
OH
I
OL
∆t/∆v Input transition rise or fall rate 0 5 ns/V
T
amb
DC supply voltage 4.5 5.5 V
Input voltage 0 V
I
High-level input voltage 2.0 V
IH
Low-level input voltage 0.8 V
IL
High-level output current –15 mA
Low-level output current 20 mA
Operating free-air temperature range –40 +85 °C
CC
V
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL PARAMETER TEST CONDITIONS
V
V
V
I
OFF
I
CEX
I
∆I
Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V
IK
High-level output voltage VCC = 4.5V; IOH = –15mA; VI = VIL or V
OH
Low-level output voltage VCC = 4.5V; IOL = 20mA; VI = VIL or V
OL
I
Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA
I
IH
IH
Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA
Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V
I
Output current
O
Quiescent supply current VCC = 5.5V; VI = GND or V
CC
Additional supply current per
CC
input pin
1
2
VCC = 5.5V; VO = 2.5V –50 –75 –180 –50 –180 mA
VCC = 5.5V; One data input at 3.4V, other
inputs at VCC or GND
CC
CC
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
T
= +25°C
amb
MIN TYP MAX MIN MAX
2.5 2.9 2.5 V
0.35 0.5 0.5 V
5.0 50 50 µA
2 50 50 µA
0.25 500 500 µA
T
amb
to +85°C
= –40°C
UNIT
1995 Sep 18
3