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INTEGRATED CIRCUITS
74ABT00
Quad 2-input NAND gate
Product specification 1995 Sep 18
IC23 Data Handbook
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Philips Semiconductors Product specification
74ABT00Quad 2-input NAND gate
QUICK REFERENCE DATA
CONDITIONS
SYMBOL PARAMETER
T
Propagation
IN
CC
delay
An or Bn
to Y
n
Output to
Output skew
Input
capacitance
Total supply
current
CL = 50pF;
VCC = 5V
VI = 0V or V
Outputs disabled;
VCC = 5.5V
t
PLH
t
PHL
t
OSLH
t
OSHL
C
I
PIN CONFIGURATION
1
A0
2
B0
Y
3
0
4
A1
5
B1
1
6
Y
GND
LOGIC SYMBOL
12459101213
B1A0 B0 A1 A2 B2 A3 B3
Y0Y1Y2Y3
VCC = Pin 14
GND = Pin 7
36811
= 25°C;
amb
GND = 0V
SA00333
CC
14
V
13
B3
12
A3
Y
11
B2
10
A2
9
Y2
87
SA00334
TYPICAL UNIT
2.5
2.0
0.4 ns
3 pF
50 µA
CC
3
ns
LOGIC DIAGRAM
1
A0
2
B0
4
A1
5
B1
9
A2
10
B2
12
VCC = Pin 14
GND = Pin 7
A3
13
B3
PIN DESCRIPTION
PIN
NUMBER
1, 2, 4, 5, 9,
10, 12, 13
3, 6, 8, 11 Yn Data outputs
7 GND Ground (0V)
14 V
SYMBOL NAME AND FUNCTION
An-Bn Data inputs
Positive supply voltage
CC
LOGIC SYMBOL (IEEE/IEC)
1
2
4
5
9
10
12
13
&
FUNCTION TABLE
INPUTS OUTPUT
A B Y
L L H
L H H
H L H
H H L
NOTES:
H = High voltage level
L = Low voltage level
3
6
8
11
SA00360
SF00004
0
Y
Y
1
Y2
Y
3
3
6
8
11
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
14-Pin Plastic DIP –40°C to +85°C 74ABT00 N 74ABT00 N SOT27-1
14-Pin plastic SO –40°C to +85°C 74ABT00 D 74ABT00 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +85°C 74ABT00 DB 74ABT00 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT00 PW 74ABT00PW DH SOT402-1
1995 Sep 18 853-1809 15755
2
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Philips Semiconductors Product specification
74ABT00Quad 2-input NAND gate
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
I
V
I
V
I
OK
OUT
OUT
T
CC
IK
stg
DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
I
DC input voltage
3
–1.2 to +7.0 V
DC output diode current VO < 0 –50 mA
DC output voltage
3
output in Off or High state –0.5 to +5.5 V
DC output current output in Low state 40 mA
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
MIN MAX
V
CC
V
V
V
I
OH
I
OL
∆t/∆v Input transition rise or fall rate 0 5 ns/V
T
amb
DC supply voltage 4.5 5.5 V
Input voltage 0 V
I
High-level input voltage 2.0 V
IH
Low-level input voltage 0.8 V
IL
High-level output current –15 mA
Low-level output current 20 mA
Operating free-air temperature range –40 +85 °C
CC
V
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL PARAMETER TEST CONDITIONS
V
V
V
I
OFF
I
CEX
I
∆I
Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V
IK
High-level output voltage VCC = 4.5V; IOH = –15mA; VI = VIL or V
OH
Low-level output voltage VCC = 4.5V; IOL = 20mA; VI = VIL or V
OL
I
Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA
I
IH
IH
Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA
Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V
I
Output current
O
Quiescent supply current VCC = 5.5V; VI = GND or V
CC
Additional supply current per
CC
input pin
1
2
VCC = 5.5V; VO = 2.5V –50 –75 –180 –50 –180 mA
VCC = 5.5V; One data input at 3.4V, other
inputs at VCC or GND
CC
CC
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
T
= +25°C
amb
MIN TYP MAX MIN MAX
2.5 2.9 2.5 V
0.35 0.5 0.5 V
5.0 50 50 µA
2 50 50 µA
0.25 500 500 µA
T
amb
to +85°C
= –40°C
UNIT
1995 Sep 18
3