Philips 2sk2232 DATASHEETS

2SK2232

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)

2SK2232

Chopper Regulator, DC−DC Converter and Motor Drive
Applications

 4-V gate drive
 Low drainsource ON resistance : R
 High forward transfer admittance : |Y
 Low leakage current : I
 Enhancement mode : V

Maximum Ratings

Characteristics Symbol Rating Unit

Drain−source voltage V

Drain−gate voltage (RGS = 20 kΩ) V

Gate−source voltage V

Drain current

Drain power dissipation (Tc = 25°C) PD 35 W

Single pulse avalanche energy
(Note 2)

Avalanche current IAR 25 A

Repetitive avalanche energy (Note 3) EAR 3.5 mJ

Channel temperature Tch 150 °C

Storage temperature range T

(Ta = 25°C)

DC (Note 1) ID 25 A

Pulse (Note 1) I

= 100 µA (max) (VDS = 60 V)

DSS

= 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

th

DSS

DGR

GSS

DP

E

AS

stg

= 36 m (typ.)

DS (ON)

| = 16 S (typ.)

fs

60 V
60 V

±20 V

100 A

156 mJ

−55~150 °C

Thermal Characteristics

Unit: mm

JEDEC ―

JEITA SC-67

TOSHIBA 2-10R1B

Weight: 1.9 g (typ.)

Characteristics Symbol Max Unit

Thermal resistance, channel to case R

Thermal resistance, channel to
ambient

Note 1: Ensure that the channel temperature does not exceed 150°C..
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device.
Please handle with caution.

= 25 V, Tch = 25°C (initial), L = 339 µH, RG = 25 Ω, IAR = 25 A

DD

R

3.57 °C / W

th (ch−c)

62.5 °C / W

th (ch−a)

1

2004-07-06

2SK2232

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut−off current I

Drain−source breakdown
voltage

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V

Drain−source ON resistance R

Forward transfer admittance |Yfs| VDS = 10 V, ID = 12 A 10 16 — S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr — 20 —

Turn−on time ton — 30 —

Switching time

Fall time tf — 55 —

Turn−off time t

(Ta = 25°C)

GSS

DSS

V

(BR) DSS

DS (ON)

— 1000 —

iss

— 200 —

rss

oss

— 130 —

off

VGS = ±16 V, VDS = 0 V — — ±10 µA

VDS = 60 V, VGS = 0 V — — 100 µA

ID = 10 mA, VGS = 0 V 60 — — V

VGS = 4 V, ID = 12 A — 0.057 0.08

V

= 10 V, ID = 12 A — 0.036 0.046

GS

= 10 V, VGS = 0 V, f = 1 MHz

V

DS

— 550 —

Ω

pF

ns

Total gate charge (Gate−source
plus gate–drain)

Gate−source charge Qgs — 25 —

Gate−drain (“miller”) charge Qgd

— 38 —

Q

g

≈ 48 V, VGS = 10 V, ID = 25 A

V

DD

— 13 —

nC

Source−Drain Ratings and Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current
(Note 1)

Pulse drain reverse current
(Note 1)

Forward voltage (diode) V

Reverse recovery time trr — 50 — ns

Reverse recovered charge Qrr

— — — 25 A

I

DR

I

— — — 100 A

DRP

IDR = 25 A, VGS = 0 V — — −1.8 V

DSF

= 25 A, VGS = 0 V, dI

I

DR

(Ta = 25°C)

/ dt = 50 A / µs

DR

— 35 — µC

Marking

K2232

Part No. (or abbreviation code)
Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

2

2004-07-06