Philips 2sk2223 DATASHEETS

2SK2223-01R

N-channel MOS-FET

C

FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: [phone]; Fax: [phone]

FAP-IIA Series

500V 0,76Ω 10A 80W

> Features > Outline Drawing

- High Speed Switching

- Low On-Resistance

- No Secondary Breakdown

- Low Driving Power

- High Voltage

GS = ± 30V Guarantee

- V

- Avalanche Proof

> Applications

- Switching Regulators

- UPS

- DC-DC converters

- General Purpose Power Amplifier

> Maximum Ratings and Characteristics > Equivalent Circuit

- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item Symbol Rating Unit
Drain-Source-Voltage V
Drain-Gate-Voltage (RGS=20KΩ)
Continous Drain Current I
Pulsed Drain Current I
Gate-Source-Voltage V
Max. Power Dissipation P
Operating and Storage Temperature Range T

V

T

DS
DGR
D
D(puls)
GS
D
ch
stg

-55 ~ +150 °C

500 V
500 V

10 A
40 A

±30 V

80 W

150 °C

Electrical Characteristics (T

-

=25°C), unless otherwise specified

Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
Gate Threshhold Voltage V
Zero Gate Voltage Drain Current I

Gate Source Leakage Current I
Drain Source On-State Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On-Time t

Turn-Off-Time t

(ton=t

on

d(on)+tr

off (ton=td(off)+tf

)

)

Avalanche Capability I
Continous Reverse Drain Current I
Pulsed Reverse Drain Current I
Diode Forward On-Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

(BR)DSSID
GS(th)
DSS

GSS
DS(on)
fs
iss
oss
rss

t

d(on)

t

r

t

d(off)

t

f
AV
DR
DRM
SD
rr
rr

=1mA VGS=0V

ID=1mA V

DS=VGS

VDS=500V Tch=25°C
V

=0V Tch=125°C

GS

VGS=±30V VDS=0V
ID=5A VGS=10V
ID=5A VDS=25V

VDS=25V

VGS=0V
f=1MHz 35 50 pF

VCC=300V

ID=10A

VGS=10V

RGS=10 Ω

=25°C

L = 100µH

T

ch

TC=25°C
TC=25°C

IF=2xIDR VGS=0V Tch=25°C

IF=IDR VGS=0V

-dIF/dt=100A/µs Tch=25°C

500 V

2,5 3,0 3,5 V

10 500 µA

0,2 1,0 mA

10 100 nA

0,6 0,76

5 10 S

1500 2200 pF

160 240 pF

15 25 ns
40 60 ns
70 100 ns
60 90 ns

10 A

10 A
40 A

1,12 1,7 V

450 ns

3 µC

Ω

- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R

R

th(ch-a)
th(ch-c)

channel to air 30 °C/W
channel to case 1,56 °C/W

N-channel MOS-FET

FAP-IIA Series

Typical Output Characteristics

Drain-Source-On-State Resistance vs. T

Typical Transfer Characteristics

→

→

→

Typical Drain-Source-On-State-Resistance vs. I

Typical Forward Transconductance vs. I

Gate Threshold Voltage vs. T

→

→

→

Typical Capacitance vs. V

Typical Input Charge

Forward Characteristics of Reverse Diode

→

→

→

Allowable Power Dissipation vs. T

Safe operation area

→

→

→

This specification is subject to change without notice!

500V 0,76Ω 10A 80W

> Characteristics

2SK2223-01R

ch

↑ 1 ↑ 2 ↑ 3

[A]

D

I

VDS [V]

↑ 4 ↑ 5 ↑ 6

]

Ω

[

DS(ON)

R

ID [A]

DS

]

Ω

[

DS(ON)

R

Tch [°C]

D

[S]

fs

g

ID [A]

D

[A]

D

I

[V]

GS(th)

V

VGS [V]

Tch [°C]

ch

↑ 7 ↑ 8 ↑ ↑ 9

C [nF]

VDS [V]

[V]

DS

V

Qg [nC]

C

[V]

GS

V

[A]

F

I

VSD [V]

↑

[K/W]

th(ch-c)

Z

Transient Thermal impedance

↑ 10 ↑ 12 11

[W]

D

P

Tc [°C]

[A]

D

I

VDS [V]

t [s]