Philips 2sk1938 DATASHEETS
2SK1938-01R
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
FAP-IIA SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
VGS=±30V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Drain-source voltage VDS 500
Continuous drain current ID 18
Pulsed drain current ID(puls] 72
Continuous reverse drain current IDR 18
Gate-source peak voltage VGS ±30
Max. power dissipation PD 100
Operating and storage Tch +150
temperature range Tstg
-55 to +150
V
A
A
A
V
W
°C
°C
Outline Drawings
±0.2
±0.3
21.5
20 Min
5.5
+0.2
0.6
1. Gate
2. Drain
3. Source
3.2
3.5
2.1
5.45
±0.3
±0.2
15.5
±0.3
1.6
1.1
5.45
ø3.2
±0.2
±0.3
5.5
9.3
±0.2
2.3
±0.3
+0.2
—0.1
±0.2
±0.3
JEDEC
EIAJ
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
+0.3
±0.2
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current IDSS
Symbol
V(BR)DSS
VGS(th)
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=500V VGS=0V Tch=25°C
Tch=125°C
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Thermal characteristics
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
±30V
VGS=
VDS=0V
ID=9A VGS=10V
ID=9A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V RG=10 Ω
ID=18A
VGS=10V
L=100µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C
Item Symbol Test Conditions
Thermal resistance
Rth(ch-a) channel to ambient
Rth(ch-c) channel to case
Min. Typ. Max. Units
500
2.5 3.0 3.5
10 500
0.2 1.0
10 100
0.25 0.35
9.0 18.0
3300 4950
340 510
80 120
35 55
80 120
190 285
120 180
18
1.0 1.5
500
V
V
µA
mA
nA
Ω
S
pF
ns
A
V
ns
Min. Typ. Max. Units
30.0
1.25
°C/W
°C/W
1
FUJI POWER MOSFET
Characteristics
2SK1938-01R
ID
[ A ]
Typical output characteristics
50
40
30
20
10
0
0 10 20 30
VDS [ V ]
Typical transfer characteristics
50
On state resistance vs. Tch
1.0
0.8
0.6
RDS(on)
[ Ω ]
0.4
0.2
0
-50 0 50 100 150
Tch [ °C ]
Typical Drain-Source on state resistance vs. ID
4.0
ID
[ A ]
gfs
[ S ]
40
3.0
30
20
10
0
0 2 4 6 8 10 0 10 20 30 40 50
VGS [ V ]
Typical forward transconductance vs. ID
40
30
20
RDS(on)
[ Ω ]
2.0
1.0
0
ID [ A ]
Gate threshold voltage vs. Tch
5.0
4.0
3.0
VGS(th)
[ V ]
2.0
10
0
0 10 20 30 40
ID [ A ]
1.0
0
-50 0 50 100 150
Tch [ °C ]
2
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