Philips 2sk1058 DATASHEETS
2SK1056, 2SK1057, 2SK1058
Silicon N Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
REJ03G0906-0200
(Previous: ADE-208-1244)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
D
G
S
1. Gate
2. Source
(Flange)
3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK1056, 2SK1057, 2SK1058
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage
Gate to source voltage V
Drain current ID 7 A
Body to drain diode reverse drain current IDR 7 A
Channel dissipation Pch*1 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
2SK1056 120
V
DSX
V
2SK1057 140
2SK1058
±15 V
GSS
160
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source
breakdown voltage
Gate to source breakdown voltage V
Gate to source cutoff voltage V
Drain to source saturation voltage V
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A, VDS = 10 V *2
Input capacitance Ciss — 600 — pF
Output capacitance Coss — 350 — pF
Reverse transfer capacitance Crss — 10 — pF
Turn-on time ton — 180 — ns
Turn-off time t
Note: 2. Pulse test
2SK1056 120
V
(BR)DSX
— — V ID = 10 mA, VGS = –10 V
2SK1057 140
2SK1058
(BR)GSS
GS(off)
DS(sat)
— 60 — ns
off
160
±15 — — V IG = ±100 µA, VDS = 0
0.15 — 1.45 V ID = 100 mA, VDS = 10 V
— — 12 V ID = 7 A, VGD = 0 *2
VGS = –5 V, VDS = 10 V,
f = 1 MHz
V
= 20 V, ID = 4 A
DD
Rev.2.00 Sep 07, 2005 page 2 of 5
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